An improved ionized‐impurity scattering model for Monte Carlo simulations

1991 ◽  
Vol 70 (3) ◽  
pp. 1475-1482 ◽  
Author(s):  
L. E. Kay ◽  
T.‐W. Tang
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Impurity Scattering ◽  
Scattering Model ◽  
Ionized Impurity Scattering

scholarly journals An Improved Ionized Impurity Scattering Model for Monte Carlo Calculations

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 209-212
Author(s):  
G. Kaiblinger-Grujin ◽  
H. Kosina
Keyword(s):  
Monte Carlo ◽  
Impurity Scattering ◽  
Ion Scattering ◽  
Charged Impurity ◽  
Doped Semiconductors ◽  
Scattering Model ◽  
Monte Carlo Calculations ◽  
Scattering Rate ◽  
Physically Based ◽  
Charged Impurity Scattering

The well known Brooks-Herring (BH) formula for charged-impurity (CI) scattering overestimates the mobility of electrons in highly doped semiconductors. The BH approach relies on a static, single-site description of the carrier-impurity interactions neglecting many-particle effects. We propose a physically based charged-impurity scattering model including Fermi- Dirac statistics, dispersive screening, and two-ion scattering. An approximation for the dielectric function is made to avoid numerical integrations. The resulting scattering rate formulas are analytical. Monte Carlo calculations were performed for majority electrons in bulk silicon at 300 K with impurity concentrations from 1015 cm–3 to 1021 cm–3.

scholarly journals Monte Carlo study of medium-energy electron penetration in aluminium and silver

Nukleonika ◽  
2015 ◽  
Vol 60 (2) ◽  
pp. 361-366 ◽  
Author(s):  
Asuman Aydın ◽  
Ali Peker
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Monte Carlo Study ◽  
Simulation Method ◽  
Single Scattering ◽  
Medium Energy ◽  
Scattering Model ◽  
Basic Parameters ◽  
Transmission Measurements ◽  
Basic Equations

Abstract Monte Carlo simulations are very useful for many physical processes. The transport of particles was simulated by Monte Carlo calculating the basic parameters such as probabilities of transmitted–reflected and angular-energy distributions after interaction with matter. Monte Carlo simulations of electron scattering based on the single scattering model were presented in the medium-energy region for aluminium and silver matters. Two basic equations are required the elastic scattering cross section and the energy loss. The Rutherford equation for the different screening parameters is investigated. This scattering model is accurate in the energy range from a few keV up to about 0.50 MeV. The reliability of the simulation method is analysed by comparing experimental data from transmission measurements.

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