Study of a 50 nm nMOSFET by ensemble Monte Carlo simulation including a new approach to surface roughness and impurity scattering in the Si inversion layer
2002 ◽
Vol 49
(1)
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pp. 125-132
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1999 ◽
Vol 272
(1-4)
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pp. 419-421
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2005 ◽
Vol 122
(17)
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pp. 174907
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Keyword(s):
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1997 ◽
Vol 107
(6)
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pp. 2012-2019
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1988 ◽
Vol 35
(7)
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pp. 849-856
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Keyword(s):