Ionized impurity scattering in Monte Carlo calculations

1986 ◽  
Vol 59 (3) ◽  
pp. 813-815 ◽  
Author(s):  
T. G. Van de Roer ◽  
F. P. Widdershoven
Keyword(s):  
Monte Carlo ◽  
Impurity Scattering ◽  
Monte Carlo Calculations ◽  
Ionized Impurity Scattering

scholarly journals An Improved Ionized Impurity Scattering Model for Monte Carlo Calculations

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 209-212
Author(s):  
G. Kaiblinger-Grujin ◽  
H. Kosina
Keyword(s):  
Monte Carlo ◽  
Impurity Scattering ◽  
Ion Scattering ◽  
Charged Impurity ◽  
Doped Semiconductors ◽  
Scattering Model ◽  
Monte Carlo Calculations ◽  
Scattering Rate ◽  
Physically Based ◽  
Charged Impurity Scattering

The well known Brooks-Herring (BH) formula for charged-impurity (CI) scattering overestimates the mobility of electrons in highly doped semiconductors. The BH approach relies on a static, single-site description of the carrier-impurity interactions neglecting many-particle effects. We propose a physically based charged-impurity scattering model including Fermi- Dirac statistics, dispersive screening, and two-ion scattering. An approximation for the dielectric function is made to avoid numerical integrations. The resulting scattering rate formulas are analytical. Monte Carlo calculations were performed for majority electrons in bulk silicon at 300 K with impurity concentrations from 1015 cm–3 to 1021 cm–3.

Hydrodynamic Simulation of Drift Mobility in N-Hg0.8Cd0.2Te

2011 ◽  
Vol 312-315 ◽  
pp. 122-126
Author(s):  
Mebarka Daoudi ◽  
Abderrahmane Belghachi ◽  
Luca Varani ◽  
Christophe Palermo
Keyword(s):  
Experimental Data ◽  
Electric Field ◽  
Dominant Role ◽  
Impurity Scattering ◽  
Drift Mobility ◽  
Scattering Mechanism ◽  
Hydrodynamic Simulation ◽  
Monte Carlo Calculations ◽  
Ionized Impurity Scattering ◽  
Good Agreement

In this paper, the transport properties of Hg0.8Cd0.2Te have been investigated at 77 K using the hydrodynamic model. We remarked that ionized impurity scattering mechanism plays a dominant role in this material at low electric field. The drift velocity, mean energy and drift mobility are determined as functions of the electric field strength. Comparison is made with Monte Carlo calculations and experimental results. The obtained velocity-field curve is in good agreement with reported experimental data.

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