Ionized impurity scattering rate for full band Monte Carlo simulation in heavily dopedn‐type silicon

H. K. Jung; H. Ohtsuka; K. Taniguchi; C. Hamaguchi

doi:10.1063/1.361122

Ionized impurity scattering rate for full band Monte Carlo simulation in heavily dopedn‐type silicon

Journal of Applied Physics ◽

10.1063/1.361122 ◽

1996 ◽

Vol 79 (5) ◽

pp. 2559-2565 ◽

Cited By ~ 5

Author(s):

H. K. Jung ◽

H. Ohtsuka ◽

K. Taniguchi ◽

C. Hamaguchi

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Impurity Scattering ◽

Type Silicon ◽

Scattering Rate ◽

Ionized Impurity Scattering ◽

Full Band

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Monte Carlo simulation of ionized impurity scattering process in bulk silicon

10.1117/12.837084 ◽

2008 ◽

Cited By ~ 1

Author(s):

Dmitrii Speransky

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Impurity Scattering ◽

Bulk Silicon ◽

Scattering Process ◽

Ionized Impurity Scattering

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Random-Dopant-Induced Drain Current Variation in Nano-MOSFETs: A Three-Dimensional Self-Consistent Monte Carlo Simulation Study Using “Ab Initio” Ionized Impurity Scattering

IEEE Transactions on Electron Devices ◽

10.1109/ted.2008.2004647 ◽

2008 ◽

Vol 55 (11) ◽

pp. 3251-3258 ◽

Cited By ~ 56

Author(s):

Craig Alexander ◽

Gareth Roy ◽

Asen Asenov

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Simulation Study ◽

Three Dimensional ◽

Impurity Scattering ◽

Drain Current ◽

Monte Carlo Simulation Study ◽

Ionized Impurity Scattering ◽

Current Variation ◽

Self Consistent

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An optimized algorithm for ionized impurity scattering in Monte Carlo simulations

Computer Physics Communications ◽

10.1016/s0010-4655(01)00440-4 ◽

2002 ◽

Vol 143 (2) ◽

pp. 136-141 ◽

Cited By ~ 3

Author(s):

W.Th. Wenckebach ◽

P. Kinsler

Keyword(s):

Monte Carlo ◽

Monte Carlo Simulations ◽

Impurity Scattering ◽

Ionized Impurity Scattering

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Electron transport analysis of 4H-SiC with full-band Monte Carlo simulation including real-space Coulomb interactions

Journal of Applied Physics ◽

10.1063/1.5144214 ◽

2020 ◽

Vol 127 (15) ◽

pp. 155702 ◽

Cited By ~ 2

Author(s):

Chi-Yin Cheng ◽

Dragica Vasileska

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Transport ◽

Real Space ◽

Coulomb Interactions ◽

Full Band ◽

Transport Analysis

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Efficient Evaluation of Ionized-Impurity Scattering in Monte Carlo Transport Calculations

phys stat sol (a) ◽

10.1002/1521-396x(199710)163:2<475::aid-pssa475>3.0.co;2-e ◽

1997 ◽

Vol 163 (2) ◽

pp. 475-489 ◽

Cited By ~ 7

Author(s):

H. Kosina

Keyword(s):

Monte Carlo ◽

Impurity Scattering ◽

Ionized Impurity Scattering ◽

Monte Carlo Transport

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Full-band Monte Carlo simulation of thin InP p+–i–n+ diodes

Microelectronics Journal ◽

10.1016/j.mejo.2004.10.002 ◽

2005 ◽

Vol 36 (1) ◽

pp. 61-65 ◽

Cited By ~ 4

Author(s):

A.H. You ◽

D.S. Ong

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Full Band

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Comparison between wurtzite phase and zincblende phase GaN MESFETs using a full band Monte Carlo simulation

IEEE Transactions on Electron Devices ◽

10.1109/16.824713 ◽

2000 ◽

Vol 47 (3) ◽

pp. 493-497 ◽

Cited By ~ 16

Author(s):

M. Farahmand ◽

K.F. Brennan

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Wurtzite Phase ◽

Full Band

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Influence of Surface Roughness on Ge Gate-All-Around Nanowire nMOSFETs by 3D Full Band Monte Carlo Simulation

10.7567/ssdm.2011.p-3-19 ◽

2011 ◽

Author(s):

K. L. Wei ◽

X. Y. Liu ◽

G. Du

Keyword(s):

Surface Roughness ◽

Monte Carlo Simulation ◽

Monte Carlo ◽

Full Band

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Investigation of temperature effects on electron transport in SiC using unique full band Monte Carlo simulation

2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) ◽

10.1109/isdrs.2001.984566 ◽

2002 ◽

Cited By ~ 1

Author(s):

G. Pennington ◽

N. Goldsman ◽

S. Scozzie ◽

J.M. McGarrity ◽

B. McLean

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Transport ◽

Temperature Effects ◽

Full Band

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Investigation of the local force approximation in numerical device simulation by full-band Monte Carlo simulation

7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427) ◽

10.1109/iwce.2000.869942 ◽

2002 ◽

Author(s):

C. Jungemann ◽

B. Neinhus ◽

B. Meinerzhagen

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Device Simulation ◽

Full Band ◽

Numerical Device

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