Random-Dopant-Induced Drain Current Variation in Nano-MOSFETs: A Three-Dimensional Self-Consistent Monte Carlo Simulation Study Using “Ab Initio” Ionized Impurity Scattering

2008 ◽  
Vol 55 (11) ◽  
pp. 3251-3258 ◽  
Author(s):  
Craig Alexander ◽  
Gareth Roy ◽  
Asen Asenov
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Simulation Study ◽  
Three Dimensional ◽  
Impurity Scattering ◽  
Drain Current ◽  
Monte Carlo Simulation Study ◽  
Ionized Impurity Scattering ◽  
Current Variation ◽  
Self Consistent
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