Nanocrystalline silicon quantum dots thin films prepared by magnetron reaction sputtering

2009 ◽  
Author(s):  
Weiping Zhao ◽  
Jinxiang Deng ◽  
Bing Yang ◽  
Zhenrui Yu ◽  
Mariano Aceves
2006 ◽  
Vol 6 (3) ◽  
pp. 344-347 ◽  
Author(s):  
A. Tanaka ◽  
G. Yamahata ◽  
Y. Tsuchiya ◽  
K. Usami ◽  
H. Mizuta ◽  
...  

2007 ◽  
Vol 46 (7A) ◽  
pp. 4386-4389 ◽  
Author(s):  
Yoshiyuki Kawata ◽  
Mohammed A. H. Khalafalla ◽  
Kouichi Usami ◽  
Yoshishige Tsuchiya ◽  
Hiroshi Mizuta ◽  
...  

2010 ◽  
Vol 49 (12) ◽  
pp. 125002 ◽  
Author(s):  
Tetsuya Ishikawa ◽  
Hiroki Nikaido ◽  
Koichi Usami ◽  
Ken Uchida ◽  
Shunri Oda

2021 ◽  
Vol 323 ◽  
pp. 48-55
Author(s):  
Jia Xin Sun ◽  
Bing Qing Zhou ◽  
Xin Gu

Silicon-rich silicon nitride thin films are prepared on P-type monocrystalline silicon wafer (100) and glass substrate by plasma chemical vapor deposition with reaction gas sources SiH4 and NH3. The deposited samples are thermally annealed from 600°C to 1000°C in an atmosphere furnace filled with high purity nitrogen. The annealing time is 60 minutes. Fourier transform infrared spectroscopy (FTIR) is carried out to investigate the bonding configurations in the films. The results show that the Si-H bond and N-H bond decrease with the increase of annealing temperature, and completely disappear at the annealing temperature of 900°C. But the Si-N bond is enhanced with the increase of annealing temperature, and the blue shift occurs, then Si content in the film increases. The Raman Spectra show that the amorphous Si Raman peak appears at 480 cm-1 in the film at 700°C. The Raman spectra of the films annealed at 1000 °C is fitted with two peaks, and a peak at 497 cm -1 is found, which indicated that the Si phase in the films changed from amorphous to crystalline with the increase of annealing temperature. The experiment also analyses the luminescence properties of the samples through PL spectrum, and it is found that there are five luminescence peaks in each sample under different annealing temperature. Based on the analysis of Raman spectrum and FTIR spectrum, the PL peak of amorphous silicon quantum dots appears at the wavelength range of 525-555nm, and the other four PL peaks are all from the defect state luminescence in the thin films, and the amorphous silicon quantum dot size is calculated according to the formula.


2017 ◽  
Vol 37 (1) ◽  
pp. 0131002
Author(s):  
赵飞 Zhao Fei ◽  
杨雯 Yang Wen ◽  
陈小波 Chen Xiaobo ◽  
杨培志 Yang Peizhi

2018 ◽  
Vol 208 ◽  
pp. 61-67 ◽  
Author(s):  
A. Rodríguez-Gómez ◽  
M. Moreno-Rios ◽  
R. García-García ◽  
A.L. Pérez-Martínez ◽  
J. Reyes-Gasga

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