scholarly journals High-density assembly of nanocrystalline silicon quantum dots

2006 ◽  
Vol 6 (3) ◽  
pp. 344-347 ◽  
Author(s):  
A. Tanaka ◽  
G. Yamahata ◽  
Y. Tsuchiya ◽  
K. Usami ◽  
H. Mizuta ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Nanocrystalline Silicon ◽  
High Density ◽  
Silicon Quantum Dots

scholarly journals Integration of Tunnel-Coupled Double Nanocrystalline Silicon Quantum Dots with a Multiple-Gate Single-Electron Transistor

2007 ◽  
Vol 46 (7A) ◽  
pp. 4386-4389 ◽  
Author(s):  
Yoshiyuki Kawata ◽  
Mohammed A. H. Khalafalla ◽  
Kouichi Usami ◽  
Yoshishige Tsuchiya ◽  
Hiroshi Mizuta ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Nanocrystalline Silicon ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Silicon Quantum Dots

Fabrication of Nanosilicon Ink and Two-Dimensional Array of Nanocrystalline Silicon Quantum Dots

2010 ◽  
Vol 49 (12) ◽  
pp. 125002 ◽  
Author(s):  
Tetsuya Ishikawa ◽  
Hiroki Nikaido ◽  
Koichi Usami ◽  
Ken Uchida ◽  
Shunri Oda
Keyword(s):  
Quantum Dots ◽  
Nanocrystalline Silicon ◽  
Two Dimensional ◽  
Silicon Quantum Dots ◽  
Dimensional Array

Photoluminescence Study of Self-Limiting Oxidation in Nanocrystalline Silicon Quantum Dots

2001 ◽  
Vol 664 ◽  
Author(s):  
Kenta Arai ◽  
Junichi Omachi ◽  
Katsuhiko Nishiguchi ◽  
Shunri Oda
Keyword(s):  
Quantum Dots ◽  
Compressive Stress ◽  
Oxidation Process ◽  
Nanocrystalline Silicon ◽  
Surface Oxide ◽  
The Self ◽  
Silicon Quantum Dots ◽  
Photoluminescence Study ◽  
Oxidation Period ◽  
Localized Excitons

ABSTRACTWe have studied photoluminescence (PL) of surface oxidized nanocrystalline silicon quantum dots (QDs) for various oxidation periods and temperatures. With increasing oxidation period, the surface oxide grows and the Si QD core shrinks initially, then retardation of the oxidation process occurs which is ascribed to compressive stress at the interface between Si QD core and oxide. Upon oxidation, the PL spectrum peak shifts toward the shorter wavelength side followed by retardation of the blueshift or even manifestation of the redshift. The origin of PL is due to the localized excitons at the interface between Si QD core and oxide or amorphous SiOx (a-SiOx) formed at the interface. The blueshift is associated with the increased quantum con.nement or increased bandgap of a-SiOx. The redshift is due to the stress e.ect of the bandgap of Si QD core or a-SiOx. We have successfully confirmed the effect of compressive stress associated with the self-limiting oxidation by PL measurement.

Periodic Two-dimensional Arrays of Silicon Quantum Dots for Nanoscale Device Applications

2002 ◽  
Vol 737 ◽  
Author(s):  
Christopher C. Striemer ◽  
Rishikesh Krishnan ◽  
Qianghua Xie ◽  
Leonid Tsybeskov ◽  
Philippe M. Fauchet
Keyword(s):  
Quantum Dots ◽  
Silicon Nanocrystals ◽  
Nanocrystalline Silicon ◽  
Bottom Of The Pyramid ◽  
Two Dimensional ◽  
Silicon Nanocrystal ◽  
Silicon Nanoclusters ◽  
Silicon Quantum Dots ◽  
Nanoscale Device ◽  
Device Applications

ABSTRACTWe report a successful unification of standard lithographic approaches (top down), anisotropic etching of atomically smooth surfaces, and controlled crystallization of silicon quantum dots (bottom up) to produce silicon nanoclusters at desired locations. These results complement our previous demonstration of silicon nanocrystal uniformity in size, shape, and crystalline orientation in nanocrystalline silicon (nc-Si)/SiO2 superlattices, and could lead to practical applications of silicon nanocrystals in electronic devices. The goal of this study was to induce silicon nanocrystal nucleation at specific lateral sites in a continuous amorphous silicon (a-Si) film. Nearly all previous studies of silicon nanocrystals are based on films containing isolated nanocrystals with random lateral position and spacing. The ability to define precise two-dimensional arrays of quantum dots would allow each quantum dot to be contacted using standard photolithographic techniques, leading to practical device applications like high-density memories. In this work, a template substrate consisting of an array of pyramid-shaped holes in a (100) silicon wafer was formed using standard microfabrication techniques. The geometry of this substrate then influenced the crystallization of an a-Si/SiO2 superlattice that was deposited on it, resulting in preferential nucleation of silicon nanoclusters near the bottom of the pyramid holes. These clusters are clearly visible in transmission electron microscopy (TEM) images, while no clusters have been observed on the planar surface areas of the template. Possible explanations for this selective nucleation and future device structures will be discussed.

Nanocrystalline silicon quantum dots thin films prepared by magnetron reaction sputtering

2009 ◽  
Author(s):  
Weiping Zhao ◽  
Jinxiang Deng ◽  
Bing Yang ◽  
Zhenrui Yu ◽  
Mariano Aceves
Keyword(s):  
Thin Films ◽  
Quantum Dots ◽  
Nanocrystalline Silicon ◽  
Silicon Quantum Dots
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