scholarly journals Elastic tunneling charge transport mechanisms in silicon quantum dots /SiO2 thin films and superlattices

2015 ◽  
Vol 117 (17) ◽  
pp. 174307 ◽  
Author(s):  
S. Illera ◽  
J. D. Prades ◽  
A. Cirera
Keyword(s):  
Thin Films ◽  
Quantum Dots ◽  
Charge Transport ◽  
Transport Mechanisms ◽  
Silicon Quantum Dots

Charge-transport mechanisms in heterostructures based on TiO2:Cr2O3 thin films

2014 ◽  
Vol 48 (9) ◽  
pp. 1174-1177 ◽  
Author(s):  
A. I. Mostovoi ◽  
V. V. Brus ◽  
P. D. Maryanchuk
Keyword(s):  
Thin Films ◽  
Charge Transport ◽  
Transport Mechanisms

Preparation and Spectrial Studies of Silicon Nitride Thin Films Containing Amorphous Silicon Quantum Dots

2021 ◽  
Vol 323 ◽  
pp. 48-55
Author(s):  
Jia Xin Sun ◽  
Bing Qing Zhou ◽  
Xin Gu
Keyword(s):  
Thin Films ◽  
Quantum Dots ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Raman Spectra ◽  
Annealing Temperature ◽  
Chemical Vapor ◽  
Blue Shift ◽  
Silicon Quantum Dots ◽  
Plasma Chemical Vapor Deposition

Silicon-rich silicon nitride thin films are prepared on P-type monocrystalline silicon wafer (100) and glass substrate by plasma chemical vapor deposition with reaction gas sources SiH4 and NH3. The deposited samples are thermally annealed from 600°C to 1000°C in an atmosphere furnace filled with high purity nitrogen. The annealing time is 60 minutes. Fourier transform infrared spectroscopy (FTIR) is carried out to investigate the bonding configurations in the films. The results show that the Si-H bond and N-H bond decrease with the increase of annealing temperature, and completely disappear at the annealing temperature of 900°C. But the Si-N bond is enhanced with the increase of annealing temperature, and the blue shift occurs, then Si content in the film increases. The Raman Spectra show that the amorphous Si Raman peak appears at 480 cm-1 in the film at 700°C. The Raman spectra of the films annealed at 1000 °C is fitted with two peaks, and a peak at 497 cm -1 is found, which indicated that the Si phase in the films changed from amorphous to crystalline with the increase of annealing temperature. The experiment also analyses the luminescence properties of the samples through PL spectrum, and it is found that there are five luminescence peaks in each sample under different annealing temperature. Based on the analysis of Raman spectrum and FTIR spectrum, the PL peak of amorphous silicon quantum dots appears at the wavelength range of 525-555nm, and the other four PL peaks are all from the defect state luminescence in the thin films, and the amorphous silicon quantum dot size is calculated according to the formula.

Influence of Annealing Technology on Spectral Properties of SiCx Thin Films Containing Silicon Quantum Dots

2017 ◽  
Vol 37 (1) ◽  
pp. 0131002
Author(s):  
赵飞 Zhao Fei ◽  
杨雯 Yang Wen ◽  
陈小波 Chen Xiaobo ◽  
杨培志 Yang Peizhi
Keyword(s):  
Thin Films ◽  
Quantum Dots ◽  
Spectral Properties ◽  
Silicon Quantum Dots

Dielectric relaxation and charge transport mechanisms in (Ba,Sr)TiO3 thin films

2001 ◽  
Vol 38 (1-4) ◽  
pp. 249-258 ◽  
Author(s):  
Gernot Steinlesberger ◽  
Hans Reisinger ◽  
Harald Bachhofer ◽  
Herbert Schroeder ◽  
Wolfgang S. M. Werner
Keyword(s):  
Thin Films ◽  
Charge Transport ◽  
Dielectric Relaxation ◽  
Transport Mechanisms

Role of the substrate on the growth of silicon quantum dots embedded in silicon nitride thin films

2018 ◽  
Vol 208 ◽  
pp. 61-67 ◽  
Author(s):  
A. Rodríguez-Gómez ◽  
M. Moreno-Rios ◽  
R. García-García ◽  
A.L. Pérez-Martínez ◽  
J. Reyes-Gasga
Keyword(s):  
Thin Films ◽  
Quantum Dots ◽  
Silicon Nitride ◽  
Silicon Quantum Dots

scholarly journals Elucidating charge transport mechanisms in cellulose-stabilized graphene inks

2020 ◽  
Vol 8 (43) ◽  
pp. 15086-15091
Author(s):  
Ana C. M. de Moraes ◽  
Jan Obrzut ◽  
Vinod K. Sangwan ◽  
Julia R. Downing ◽  
Lindsay E. Chaney ◽  
...  
Keyword(s):  
Thin Films ◽  
Charge Carrier ◽  
Charge Transport ◽  
Ethyl Cellulose ◽  
Carrier Mobility ◽  
Charge Carrier Mobility ◽  
Transport Mechanisms ◽  
High Charge ◽  
Polymer Stabilizer ◽  
High Charge Carrier Mobility

Thin-films derived from solution-processed graphene inks that use ethyl cellulose as a polymer stabilizer show mixed metallic-semiconducting charge transport with high charge carrier mobility.

Defect Structure, Charge Transport Mechanisms, and Strain Effects in Sr4Fe6O12+δEpitaxial Thin Films

2010 ◽  
Vol 22 (4) ◽  
pp. 1452-1461 ◽  
Author(s):  
Cecilia Solís ◽  
WooChul Jung ◽  
Harry. L. Tuller ◽  
José Santiso
Keyword(s):  
Thin Films ◽  
Charge Transport ◽  
Defect Structure ◽  
Transport Mechanisms ◽  
Strain Effects

scholarly journals Charge transport mechanisms and memory effects in amorphous TaNx thin films

2013 ◽  
Vol 8 (1) ◽  
pp. 432 ◽  
Author(s):  
Nikolaos Spyropoulos-Antonakakis ◽  
Evangelia Sarantopoulou ◽  
Goran Drazic ◽  
Zoe Kollia ◽  
Dimitrios Christofilos ◽  
...  
Keyword(s):  
Thin Films ◽  
Charge Transport ◽  
Memory Effects ◽  
Transport Mechanisms
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