Role of the substrate on the growth of silicon quantum dots embedded in silicon nitride thin films

2018 ◽  
Vol 208 ◽  
pp. 61-67 ◽  
Author(s):  
A. Rodríguez-Gómez ◽  
M. Moreno-Rios ◽  
R. García-García ◽  
A.L. Pérez-Martínez ◽  
J. Reyes-Gasga
Keyword(s):  
Thin Films ◽  
Quantum Dots ◽  
Silicon Nitride ◽  
Silicon Quantum Dots

Preparation and Spectrial Studies of Silicon Nitride Thin Films Containing Amorphous Silicon Quantum Dots

2021 ◽  
Vol 323 ◽  
pp. 48-55
Author(s):  
Jia Xin Sun ◽  
Bing Qing Zhou ◽  
Xin Gu
Keyword(s):  
Thin Films ◽  
Quantum Dots ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Raman Spectra ◽  
Annealing Temperature ◽  
Chemical Vapor ◽  
Blue Shift ◽  
Silicon Quantum Dots ◽  
Plasma Chemical Vapor Deposition

Silicon-rich silicon nitride thin films are prepared on P-type monocrystalline silicon wafer (100) and glass substrate by plasma chemical vapor deposition with reaction gas sources SiH4 and NH3. The deposited samples are thermally annealed from 600°C to 1000°C in an atmosphere furnace filled with high purity nitrogen. The annealing time is 60 minutes. Fourier transform infrared spectroscopy (FTIR) is carried out to investigate the bonding configurations in the films. The results show that the Si-H bond and N-H bond decrease with the increase of annealing temperature, and completely disappear at the annealing temperature of 900°C. But the Si-N bond is enhanced with the increase of annealing temperature, and the blue shift occurs, then Si content in the film increases. The Raman Spectra show that the amorphous Si Raman peak appears at 480 cm-1 in the film at 700°C. The Raman spectra of the films annealed at 1000 °C is fitted with two peaks, and a peak at 497 cm -1 is found, which indicated that the Si phase in the films changed from amorphous to crystalline with the increase of annealing temperature. The experiment also analyses the luminescence properties of the samples through PL spectrum, and it is found that there are five luminescence peaks in each sample under different annealing temperature. Based on the analysis of Raman spectrum and FTIR spectrum, the PL peak of amorphous silicon quantum dots appears at the wavelength range of 525-555nm, and the other four PL peaks are all from the defect state luminescence in the thin films, and the amorphous silicon quantum dot size is calculated according to the formula.

Combined study of the effect of deposition temperature and post-deposition annealing on the photoluminescence of silicon quantum dots embedded in chlorinated silicon nitride thin films

RSC Advances ◽  
2016 ◽  
Vol 6 (81) ◽  
pp. 77440-77451 ◽  
Author(s):  
M. A. Serrano-Núñez ◽  
A. Rodríguez-Gómez ◽  
L. Escobar-Alarcón ◽  
J. C. Alonso-Huitrón
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Quantum Dots ◽  
Silicon Nitride ◽  
Deposition Temperature ◽  
Post Deposition Annealing ◽  
Silicon Quantum Dots ◽  
Film Composition ◽  
Annealing Temperatures ◽  
Post Deposition

The photoluminescence (PL) evolution of SiQDs respect deposition and annealing temperatures is studied in a combined manner. The PL identified changes are associated to changes in thin film composition. 150 °C is identified as an important threshold.

Effect of argon flow on promoting boron doping forin-situgrown silicon nitride thin films containing silicon quantum dots

2017 ◽  
Vol 28 (28) ◽  
pp. 285202
Author(s):  
Jia Liu ◽  
Bin Liu ◽  
Xisheng Zhang ◽  
Xiaojia Guo ◽  
Shengzhong (Frank) Liu
Keyword(s):  
Thin Films ◽  
Quantum Dots ◽  
Silicon Nitride ◽  
Boron Doping ◽  
Silicon Quantum Dots ◽  
Argon Flow

Annealing and excitation dependent photoluminescence of silicon rich silicon nitride films with silicon quantum dots

Vacuum ◽  
2015 ◽  
Vol 121 ◽  
pp. 147-151 ◽  
Author(s):  
Wugang Liao ◽  
Xiangbin Zeng ◽  
Xixing Wen ◽  
Xiaoxiao Chen ◽  
Wenzhao Wang
Keyword(s):  
Quantum Dots ◽  
Silicon Nitride ◽  
Silicon Quantum Dots ◽  
Silicon Nitride Films

scholarly journals Electronic States and Luminescence in Porous Silicon Quantum Dots: The Role of Oxygen

1999 ◽  
Vol 82 (1) ◽  
pp. 197-200 ◽  
Author(s):  
M. V. Wolkin ◽  
J. Jorne ◽  
P. M. Fauchet ◽  
G. Allan ◽  
C. Delerue
Keyword(s):  
Quantum Dots ◽  
Porous Silicon ◽  
Electronic States ◽  
Silicon Quantum Dots

scholarly journals Role of Oxygen on Chemical Segregation in Uncapped Ge2Sb2Te5 Thin Films on Silicon Nitride

2020 ◽  
Vol 9 (5) ◽  
pp. 054007
Author(s):  
Shalini Tripathi ◽  
Paul Kotula ◽  
Manish Kumar Singh ◽  
Chanchal Ghosh ◽  
Gokhan Bakan ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Chemical Segregation

Photoluminescence and optical absorption properties of silicon quantum dots embedded in Si-rich silicon nitride matrices

2009 ◽  
Vol 129 (12) ◽  
pp. 1744-1746 ◽  
Author(s):  
Béchir Rezgui ◽  
Abel Sibai ◽  
Tetyana Nychyporuk ◽  
Mustapha Lemiti ◽  
Georges Brémond
Keyword(s):  
Quantum Dots ◽  
Silicon Nitride ◽  
Optical Absorption ◽  
Absorption Properties ◽  
Silicon Quantum Dots

Crystallization Behavior of Silicon Quantum Dots in a Silicon Nitride Matrix

2012 ◽  
Vol 12 (2) ◽  
pp. 1448-1452 ◽  
Author(s):  
Rin Ha ◽  
Shinho Kim ◽  
Hyun Jong Kim ◽  
Jung Chul Lee ◽  
Jong-Seong Bae ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Silicon Nitride ◽  
Crystallization Behavior ◽  
Silicon Quantum Dots
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