Metrology challenges of double exposure and double patterning

Author(s):  
William H. Arnold ◽  
Mircea Dusa ◽  
Jo Flinders
2010 ◽  
Vol 49 (3) ◽  
pp. 035201
Author(s):  
Junji Miyazaki ◽  
Nobuhito Toyama ◽  
Akira Kawai

2010 ◽  
Author(s):  
Masaya Yoshino ◽  
Hiroshi Umeda ◽  
Hiroaki Tsushima ◽  
Hidenori Watanabe ◽  
Satoshi Tanaka ◽  
...  

2010 ◽  
Author(s):  
Pietro Cantu ◽  
Livio Baldi ◽  
Paolo Piacentini ◽  
Joost Sytsma ◽  
Bertrand Le Gratiet ◽  
...  

2009 ◽  
Author(s):  
Young C. Bae ◽  
Yi Liu ◽  
Thomas Cardolaccia ◽  
Ken Spizuoco ◽  
Rosemary Bell ◽  
...  

2008 ◽  
Author(s):  
Andreas Erdmann ◽  
Peter Evanschitzky ◽  
Tim Fühner ◽  
Thomas Schnattinger ◽  
Cheng-Bai Xu ◽  
...  

Open Physics ◽  
2013 ◽  
Vol 11 (2) ◽  
Author(s):  
Kornelia Indykiewicz ◽  
Marcin Hajłasz ◽  
Bogdan Paszkiewicz

AbstractThis paper presents the methods of fabricating narrow parallel submicrometric stripes in silicon dioxide and a resist layer. The experiments were conducted by two techniques: double patterning lithography and double exposure lithography. In addition to the above mentioned processes, mask translation was applied. For all conducted experiments, chrome masks and a 405 nm line of the high pressure mercury lamp of an MA-56 Mask Aligner System were used. The main aim of the performed tests was to establish the utility and the possible applications of the methods used.


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