The discretization of minority carrier generation kinetics at the semiconductor surface bordering inhomogeneous insulator

2004 ◽  
Author(s):  
Yuri V. Gulyaev ◽  
Alexander G. Zhdan ◽  
E. I. Goldman ◽  
G. V. Chucheva
Keyword(s):  
Minority Carrier ◽  
Semiconductor Surface ◽  
Carrier Generation

Minority‐carrier generation inn‐InP/SiO2capacitors

1979 ◽  
Vol 35 (1) ◽  
pp. 86-88 ◽  
Author(s):  
J. Stannard ◽  
R. L. Henry
Keyword(s):  
Minority Carrier ◽  
Carrier Generation

Theoretical Analysis of the Minority Carrier Lifetime in a Multicrystalline Wafer with Spatially Varying Defect Distribution

1998 ◽  
Vol 510 ◽  
Author(s):  
Bhushan Sopori ◽  
Wei Chen ◽  
N. M. Ravindra
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Weighted Average ◽  
Minority Carrier Lifetime ◽  
Carrier Generation ◽  
Average Value ◽  
Dimensional Modeling ◽  
Solar Cell Fabrication ◽  
Cell Fabrication ◽  
Spatially Varying

AbstractMulticrystalline Si (mc-Si) wafers, used for the commercial solar cell fabrication, have spatial nonuniformities in the material properties that cause strong variations in the minority carrier lifetime, τ. We present the results of two-dimensional modeling to show carrier generation, recombination and transport in such a material. These results are used to infer measurement conditions that can yield meaningful spatially weighted average value of τ.

scholarly journals Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices

2009 ◽  
Vol 94 (20) ◽  
pp. 202112 ◽  
Author(s):  
Takuji Hosoi ◽  
Katsuhiro Kutsuki ◽  
Gaku Okamoto ◽  
Marina Saito ◽  
Takayoshi Shimura ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Minority Carrier ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Carrier Generation ◽  
Voltage Shift ◽  
Flatband Voltage ◽  
Thermally Grown

scholarly journals Hot Carrier Photocurrent through MOS Structure

2021 ◽  
Vol 11 (16) ◽  
pp. 7211
Author(s):  
Jonas Gradauskas ◽  
Steponas Ašmontas
Keyword(s):  
Laser Light ◽  
Laser Pulses ◽  
Oxide Semiconductor ◽  
Semiconductor Surface ◽  
Displacement Current ◽  
Carrier Generation ◽  
Long Wavelength ◽  
Hot Carrier ◽  
Laser Heated ◽  
Long Wavelength Infrared

Flow of photocurrent through the metal-oxide-semiconductor structure induced by the pulsed infrared CO2 laser is investigated experimentally. In the case of a perfect insulator, the photocurrent has a photocapacitive character. Its rise is based on the hot carrier phenomenon; no carrier generation is present, only redistribution of laser-heated carriers takes place at the semiconductor surface. The magnitude of this displacement current is related to the capacitance of the structure and is dependent on the rate of the laser pulse change as well as on the laser light intensity. This effect can find application in the detection of fast infrared laser pulses as well as in the development of infrared photovaractors. Operation of such devices would not require cryogenic temperatures what is usually needed by the long-wavelength infrared semiconductor technique.

Effect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In0.53Ga0.47As MOS capacitors

2015 ◽  
Vol 147 ◽  
pp. 325-329 ◽  
Author(s):  
É. O’Connor ◽  
K. Cherkaoui ◽  
S. Monaghan ◽  
B. Sheehan ◽  
I.M. Povey ◽  
...  
Keyword(s):  
Minority Carrier ◽  
Carrier Generation ◽  
Mos Capacitors ◽  
Generation Lifetime
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