Minority‐carrier generation inn‐InP/SiO2capacitors

1979 ◽  
Vol 35 (1) ◽  
pp. 86-88 ◽  
Author(s):  
J. Stannard ◽  
R. L. Henry
Keyword(s):  
Minority Carrier ◽  
Carrier Generation

Theoretical Analysis of the Minority Carrier Lifetime in a Multicrystalline Wafer with Spatially Varying Defect Distribution

1998 ◽  
Vol 510 ◽  
Author(s):  
Bhushan Sopori ◽  
Wei Chen ◽  
N. M. Ravindra
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Weighted Average ◽  
Minority Carrier Lifetime ◽  
Carrier Generation ◽  
Average Value ◽  
Dimensional Modeling ◽  
Solar Cell Fabrication ◽  
Cell Fabrication ◽  
Spatially Varying

AbstractMulticrystalline Si (mc-Si) wafers, used for the commercial solar cell fabrication, have spatial nonuniformities in the material properties that cause strong variations in the minority carrier lifetime, τ. We present the results of two-dimensional modeling to show carrier generation, recombination and transport in such a material. These results are used to infer measurement conditions that can yield meaningful spatially weighted average value of τ.

scholarly journals Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices

2009 ◽  
Vol 94 (20) ◽  
pp. 202112 ◽  
Author(s):  
Takuji Hosoi ◽  
Katsuhiro Kutsuki ◽  
Gaku Okamoto ◽  
Marina Saito ◽  
Takayoshi Shimura ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Minority Carrier ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Carrier Generation ◽  
Voltage Shift ◽  
Flatband Voltage ◽  
Thermally Grown

Effect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In0.53Ga0.47As MOS capacitors

2015 ◽  
Vol 147 ◽  
pp. 325-329 ◽  
Author(s):  
É. O’Connor ◽  
K. Cherkaoui ◽  
S. Monaghan ◽  
B. Sheehan ◽  
I.M. Povey ◽  
...  
Keyword(s):  
Minority Carrier ◽  
Carrier Generation ◽  
Mos Capacitors ◽  
Generation Lifetime
Sign in / Sign up

Export Citation Format

Share Document