Determination of minority‐carrier generation lifetime in beam‐recrystallized silicon‐on‐insulator structure by using a depletion‐mode transistor
2015 ◽
Vol 147
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pp. 325-329
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1994 ◽
Vol 37
(1)
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pp. 31-36
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1985 ◽
Vol 28
(4)
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pp. 403-406
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Keyword(s):
2005 ◽
Vol 44
(4B)
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pp. 2390-2394
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Keyword(s):