The Effect of Silicon Wafer Imperfections on Minority Carrier Generation and Dielectric Breakdown in MOS Structures

C. M. Osburn; D. W. Ormond

doi:10.1149/1.2402020

The Effect of Silicon Wafer Imperfections on Minority Carrier Generation and Dielectric Breakdown in MOS Structures

Journal of The Electrochemical Society ◽

10.1149/1.2402020 ◽

1974 ◽

Vol 121 (9) ◽

pp. 1229 ◽

Cited By ~ 6

Author(s):

C. M. Osburn ◽

D. W. Ormond

Keyword(s):

Silicon Wafer ◽

Minority Carrier ◽

Dielectric Breakdown ◽

Carrier Generation ◽

Mos Structures

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ChemInform Abstract: THE EFFECT OF SILICON WAFER IMPERFECTIONS ON MINORITY CARRIER GENERATION AND DIELECTRIC BREAKDOWN IN MOS STRUCTURES

Chemischer Informationsdienst ◽

10.1002/chin.197448040 ◽

1974 ◽

Vol 5 (48) ◽

pp. no-no

Author(s):

C. M. OSBURN ◽

D. W. ORMOND

Keyword(s):

Silicon Wafer ◽

Minority Carrier ◽

Dielectric Breakdown ◽

Carrier Generation ◽

Mos Structures

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The influence of silicon heat treatments on the minority carrier generation and the dielectric breakdown in MOS structures

Journal of Electronic Materials ◽

10.1007/bf02652958 ◽

1974 ◽

Vol 3 (2) ◽

pp. 579-599 ◽

Cited By ~ 10

Author(s):

J. M. Green ◽

C. M. Osburn ◽

T. O. Sedgwick

Keyword(s):

Minority Carrier ◽

Dielectric Breakdown ◽

Heat Treatments ◽

Carrier Generation ◽

Mos Structures

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Minority carrier lifetime of silicon wafer passivated by PECVD amorphous silicon layers for silicon heterojunction solar cells

2008 33rd IEEE Photovolatic Specialists Conference ◽

10.1109/pvsc.2008.4922525 ◽

2008 ◽

Author(s):

Min Gu Kang ◽

Sung Ju Tark ◽

Joon Sung Lee ◽

Jeong Chul Lee ◽

Kyung Hoon Yoon ◽

...

Keyword(s):

Solar Cells ◽

Amorphous Silicon ◽

Silicon Wafer ◽

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Heterojunction Solar Cells ◽

Silicon Heterojunction Solar Cells

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Snapback Induced Gate Dielectric Breakdown in Graded Junction MOS Structures

10.1109/irps.1984.362038 ◽

1984 ◽

Cited By ~ 2

Author(s):

S.N. Shabde ◽

G. Simmons ◽

A. Baluni ◽

D. Back

Keyword(s):

Gate Dielectric ◽

Dielectric Breakdown ◽

Mos Structures ◽

Graded Junction

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Dielectric breakdown induced by sodium in MOS structures

Journal of Applied Physics ◽

10.1063/1.1661931 ◽

1973 ◽

Vol 44 (1) ◽

pp. 527-528 ◽

Cited By ~ 53

Author(s):

T. H. DiStefano

Keyword(s):

Dielectric Breakdown ◽

Mos Structures

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Silicon-wafer process evaluation using minority-carrier diffusion-length measurement by the SPV method

Microelectronics Reliability ◽

10.1016/0026-2714(84)90565-1 ◽

1984 ◽

Vol 24 (3) ◽

pp. 591

Keyword(s):

Silicon Wafer ◽

Process Evaluation ◽

Minority Carrier ◽

Diffusion Length ◽

Length Measurement ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion

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Majority- and minority-carrier lifetime in MOS structures

Solid-State Electronics ◽

10.1016/0038-1101(75)90177-x ◽

1975 ◽

Vol 18 (12) ◽

pp. 1115-1122 ◽

Cited By ~ 9

Author(s):

G. Baccarani ◽

C.A. Baffoni ◽

M. Rudan ◽

G. Spadini

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Mos Structures

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A Nondestructive Method for Measuring the Spatial Distribution of Minority Carrier Lifetime in Silicon Wafer

Japanese Journal of Applied Physics ◽

10.1143/jjap.18.2171 ◽

1979 ◽

Vol 18 (11) ◽

pp. 2171-2172 ◽

Cited By ~ 17

Author(s):

Yoichi Mada

Keyword(s):

Spatial Distribution ◽

Silicon Wafer ◽

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Nondestructive Method

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The Role of Metallic Impurities in the Field-Enhanced Carrier Generation in MOS Structures

phys stat sol (a) ◽

10.1002/pssa.2211540213 ◽

1996 ◽

Vol 154 (2) ◽

pp. 599-605 ◽

Cited By ~ 1

Author(s):

P. Peykov ◽

T. Diaz ◽

H. Juárez ◽

R. Castanedo

Keyword(s):

Carrier Generation ◽

Mos Structures ◽

Metallic Impurities

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Minority‐carrier generation inn‐InP/SiO2capacitors

Applied Physics Letters ◽

10.1063/1.90903 ◽

1979 ◽

Vol 35 (1) ◽

pp. 86-88 ◽

Cited By ~ 8

Author(s):

J. Stannard ◽

R. L. Henry

Keyword(s):

Minority Carrier ◽

Carrier Generation

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