Theoretical Analysis of the Minority Carrier Lifetime in a Multicrystalline Wafer with Spatially Varying Defect Distribution

1998 ◽  
Vol 510 ◽  
Author(s):  
Bhushan Sopori ◽  
Wei Chen ◽  
N. M. Ravindra
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Weighted Average ◽  
Minority Carrier Lifetime ◽  
Carrier Generation ◽  
Average Value ◽  
Dimensional Modeling ◽  
Solar Cell Fabrication ◽  
Cell Fabrication ◽  
Spatially Varying

AbstractMulticrystalline Si (mc-Si) wafers, used for the commercial solar cell fabrication, have spatial nonuniformities in the material properties that cause strong variations in the minority carrier lifetime, τ. We present the results of two-dimensional modeling to show carrier generation, recombination and transport in such a material. These results are used to infer measurement conditions that can yield meaningful spatially weighted average value of τ.

Minority Carrier Lifetime Studies in Halogen Lamp Recrystallized Soi Films

1985 ◽  
Vol 53 ◽  
Author(s):  
A. Chantre ◽  
D. Ronzani ◽  
D. P. Vu
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Halogen Lamp ◽  
Carrier Generation ◽  
Localization Technique ◽  
Defect Localization ◽  
Lifetime Studies ◽  
Free Material

ABSTRACTWe report a detailed investigation of minority carrier generation processes in halogen lamp recrystallized SOI films. Various kinds of materials have been analyzed in order to assess the roles of the different crystallographic imperfections present in the layers (precipitates, subgrain boundaries, interfaces). We conclude that generation lifetimes inprecipitate-free material are controlled by subgrain boundaries, and show that 100 μs lifetimes can be measured in defect-free regions of SOI obtained using a defect localization technique.

Microwave transmission method for measuring minority-carrier lifetime in silicon slices

1971 ◽  
Vol 7 (25) ◽  
pp. 754
Author(s):  
R.E. Thomas ◽  
V. Makios ◽  
S. Ogletree ◽  
R. Mckillican
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Transmission Method ◽  
Microwave Transmission

scholarly journals Marked enhancement of the photoresponsivity and minority-carrier lifetime of BaSi2 passivated with atomic hydrogen

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
Zhihao Xu ◽  
Denis A. Shohonov ◽  
Andrew B. Filonov ◽  
Kazuhiro Gotoh ◽  
Tianguo Deng ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Marked Enhancement

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

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