Discussion of “Minority Carrier Generation Studies in MOS Capacitors on N-Type Silicon” [D. R. Young and C. M. Osburn (pp. 1578–1581, Vol. 120, No. 11)]

1974 ◽  
Vol 121 (6) ◽  
pp. 849 ◽  
Author(s):  
W. Zechnall
Keyword(s):  
Minority Carrier ◽  
Carrier Generation ◽  
Mos Capacitors ◽  
Type Silicon

Effect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In0.53Ga0.47As MOS capacitors

2015 ◽  
Vol 147 ◽  
pp. 325-329 ◽  
Author(s):  
É. O’Connor ◽  
K. Cherkaoui ◽  
S. Monaghan ◽  
B. Sheehan ◽  
I.M. Povey ◽  
...  
Keyword(s):  
Minority Carrier ◽  
Carrier Generation ◽  
Mos Capacitors ◽  
Generation Lifetime

Efficient lateral minority carrier transport in proton‐implanted p‐type silicon

1995 ◽  
Vol 67 (1) ◽  
pp. 88-90 ◽  
Author(s):  
D. C. Leung ◽  
P. R. Nelson ◽  
O. M. Stafsudd ◽  
J. B. Parkinson ◽  
G. E. Davis
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Type Silicon ◽  
P Type

The effect of oxide precipitates on minority carrier lifetime in p-type silicon

2011 ◽  
Vol 110 (5) ◽  
pp. 053713 ◽  
Author(s):  
J. D. Murphy ◽  
K. Bothe ◽  
M. Olmo ◽  
V. V. Voronkov ◽  
R. J. Falster
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Type Silicon ◽  
P Type

scholarly journals Study of p-type silicon MOS capacitors at HL-LHC radiation levels through irradiation with a cobalt-60 gamma source and a TCAD simulation

2021 ◽  
Vol 16 (06) ◽  
pp. P06040
Author(s):  
P. Asenov ◽  
P. Assiouras ◽  
A. Boziari ◽  
K. Filippou ◽  
I. Kazas ◽  
...  
Keyword(s):  
Gamma Source ◽  
Mos Capacitors ◽  
Type Silicon ◽  
Tcad Simulation ◽  
P Type

On the Measurement of Minority Carrier Lifetime in n-Type Silicon

1955 ◽  
Vol 68 (3) ◽  
pp. 121-129 ◽  
Author(s):  
J B Arthur ◽  
W Bardsley ◽  
A F Gibson ◽  
C A Hogarth
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Type Silicon
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