Focused ion-beam vacuum lithography of InP with an ultrathin native oxide resist

1991 ◽  
Author(s):  
Yuh-Lin Wang ◽  
Henryk Temkin ◽  
Lloyd R. Harriott ◽  
Robert A. Hamm
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Native Oxide ◽  
Vacuum Lithography

Nanometer scale focused ion beam vacuum lithography using an ultrathin oxide resist

1991 ◽  
Author(s):  
Lloyd R. Harriott ◽  
Henryk Temkin ◽  
C. H. Chu ◽  
Yuh-Lin Wang ◽  
Y. F. Hsieh ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Nanometer Scale ◽  
Ultrathin Oxide ◽  
Vacuum Lithography

Deep Structures Produced in III-V Materials by Combined Focused Ion Beam Irradiation and Dry Etching

1989 ◽  
Vol 158 ◽  
Author(s):  
L.R. Harriott ◽  
Y.L. Wang ◽  
B.H. Chin ◽  
H. Temkin
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Dry Etching ◽  
Surface Pattern ◽  
Gas Source ◽  
Direct Patterning ◽  
Ion Energies ◽  
Micron Diameter ◽  
Vacuum Lithography

ABSTRACTWe have developed a direct patterning process for InP based materials which uses ion exposure followed by dry etching to produce surface topography. The substrate is first implanted with a 20 keV Ga+ beam focused to 0.2 micron diameter. The surface pattern is then developed in the substrate by etching with or without a low energy (25 -100 eV) flood Ar+ ion beam in a C12(5×10-4 Torr) atmosphere at 180 to 2000 C. This process has been integrated in a common vacuum chamber with a gas source molecular beam epitaxy (GSMBE) system. In-situ patterning and high quality overgrowth has been demonstrated for low Ar+ ion energies during etching. In this paper, we will describe a model for the patterning mechanism and suggest how it may be exploited to achieve a complete vacuum lithography process compatible with epitaxial regrowth.

A novel vacuum lithography with SiNx resist for focused ion beam exposure and dry etching development

1991 ◽  
Author(s):  
S. Takahashi ◽  
M. Ohashi ◽  
S. Fukatsu ◽  
Y. Shiraki ◽  
R. Ito
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Dry Etching ◽  
Vacuum Lithography

In-Situ Patiterning and Regrowth of InP Based Heterostructures using a Native Oxide Mask

1990 ◽  
Vol 198 ◽  
Author(s):  
Y. L. Wang ◽  
L. R. Harriott ◽  
H. Temkin
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Auger Analysis ◽  
Patterned Substrate ◽  
Useful Signal ◽  
Secondary Charged Particle

ABSTRACTWe have successfully used an ultrathin (20-50 Å) native oxide layer on the surface of InP as an etch mask for transferring patterns onto the substrate. The oxide mask is grown in situ in O2 atmosphere, and the mask pattern is created by locally removing the oxide with a focused ion beam. Depending on the thickness of the mask, the required ion dose varies from 2×1014 to 2×1015 Ga/cm2. C12 etches the exposed areas selectively. Features as deep as 3 microns have been produced with such an ultrathin mask. High quality InGaAs and InP epitaxial layers have been overgrown on such patterned substrate. We have studied the formation and desorption of the oxide mask with Auger analysis. We also demonstrate that the secondary charged particle emission from a substrate during ion exposure provides a useful signal for the determination of the required dose.

Silver Growth on AFM Tip Apexes from Silver Nitrate Solutions Triggered by Focused-Ion-Beam Irradiation

MRS Advances ◽  
2016 ◽  
Vol 1 (25) ◽  
pp. 1865-1869 ◽  
Author(s):  
Masayuki Nishi ◽  
Daisuke Teranishi ◽  
Hiroki Itasaka ◽  
Masahiro Shimizu ◽  
Kazuyuki Hirao
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Silver Ions ◽  
Native Oxide ◽  
Silver Nanostructures ◽  
Native Oxide Layer ◽  
Silver Nanostructure ◽  
Afm Probe ◽  
The Difference ◽  
Silver Nitrate Solutions

ABSTRACTSilver nanostructures are directly grown on the apex of commercially available silicon AFM probes using our area-selective electroless deposition: the apex of a silicon AFM probe is irradiated using a focused ion beam (FIB), and then the FIB-irradiated AFM probe is exposed to a pure AgNO3aqueous solution. With this method, a silver nanostructure selectively grows on the tip apex where the native oxide layer has been removed in response to FIB irradiation. Silver ions are reduced by the electrons flowing from the silicon probes into the solution through the FIB-irradiated area owing to the difference in Fermi energy between silicon and the solution. The morphology of the growing silver depends on the concentration of both AgNO3and the electrons. The growth of a gold nanoflower is also demonstrated on the apex of a silicon AFM probe.

Nanocomposite Polyurethane Foams Via POSS Blends

2002 ◽  
Vol 733 ◽  
Author(s):  
Brock McCabe ◽  
Steven Nutt ◽  
Brent Viers ◽  
Tim Haddad
Keyword(s):  
High Temperature ◽  
Sample Preparation ◽  
Room Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Polyurethane Foams ◽  
Development Projects ◽  
Polymer Systems ◽  
Polyurethane Resin ◽  
Military Development

AbstractPolyhedral Oligomeric Silsequioxane molecules have been incorporated into a commercial polyurethane formulation to produce nanocomposite polyurethane foam. This tiny POSS silica molecule has been used successfully to enhance the performance of polymer systems using co-polymerization and blend strategies. In our investigation, we chose a high-temperature MDI Polyurethane resin foam currently used in military development projects. For the nanofiller, or “blend”, Cp7T7(OH)3 POSS was chosen. Structural characterization was accomplished by TEM and SEM to determine POSS dispersion and cell morphology, respectively. Thermal behavior was investigated by TGA. Two methods of TEM sample preparation were employed, Focused Ion Beam and Ultramicrotomy (room temperature).

An Study of Influence of Imperfections on the Delamination of Diamond-Like Carbon Films

2002 ◽  
Vol 719 ◽  
Author(s):  
Myoung-Woon Moon ◽  
Kyang-Ryel Lee ◽  
Jin-Won Chung ◽  
Kyu Hwan Oh
Keyword(s):  
Cross Sections ◽  
Focused Ion Beam ◽  
Imaging System ◽  
Ion Beam ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Glass Substrates ◽  
Atomic Force ◽  
Initiation And Propagation

AbstractThe role of imperfections on the initiation and propagation of interface delaminations in compressed thin films has been analyzed using experiments with diamond-like carbon (DLC) films deposited onto glass substrates. The surface topologies and interface separations have been characterized by using the Atomic Force Microscope (AFM) and the Focused Ion Beam (FIB) imaging system. The lengths and amplitudes of numerous imperfections have been measured by AFM and the interface separations characterized on cross sections made with the FIB. Chemical analysis of several sites, performed using Auger Electron Spectroscopy (AES), has revealed the origin of the imperfections. The incidence of buckles has been correlated with the imperfection length.

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