In-Situ Patiterning and Regrowth of InP Based Heterostructures using a Native Oxide Mask

1990 ◽  
Vol 198 ◽  
Author(s):  
Y. L. Wang ◽  
L. R. Harriott ◽  
H. Temkin
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Auger Analysis ◽  
Patterned Substrate ◽  
Useful Signal ◽  
Secondary Charged Particle

ABSTRACTWe have successfully used an ultrathin (20-50 Å) native oxide layer on the surface of InP as an etch mask for transferring patterns onto the substrate. The oxide mask is grown in situ in O2 atmosphere, and the mask pattern is created by locally removing the oxide with a focused ion beam. Depending on the thickness of the mask, the required ion dose varies from 2×1014 to 2×1015 Ga/cm2. C12 etches the exposed areas selectively. Features as deep as 3 microns have been produced with such an ultrathin mask. High quality InGaAs and InP epitaxial layers have been overgrown on such patterned substrate. We have studied the formation and desorption of the oxide mask with Auger analysis. We also demonstrate that the secondary charged particle emission from a substrate during ion exposure provides a useful signal for the determination of the required dose.

CAD - Less Blind Navigation in Focused Ion Beam System

2005 ◽  
Author(s):  
Valery Ray ◽  
Chris Gerlinsky
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Optical Microscope ◽  
Specific System ◽  
Optical Scanning ◽  
Beam System ◽  
Traditional Approaches ◽  
Proprietary System

Abstract Traditional approaches to navigation in focused ion beam (FIB) circuit edit include blind CAD navigation based on GDSII data from the manufacturer and navigation assisted by the in-situ optical microscope (OM). These approaches are difficult to apply in security audit and reverse engineering fields, where CAD data are unavailable and objects of interest are either too small, or located in an array that is too dense for imaging by in-situ OM. To address this issue, this article presents a methodology which is based on establishing a chip-specific system of coordinates and determination of precise locations of the objects of interest within the device. The work was performed on a Vectra 986 FIB system from FEI Company and a proprietary system for optical scanning of semiconductor devices. Auxiliary techniques allowing enhancement of navigational accuracy, developed for this application, are equally applicable to the general navigation procedures during generic FIB circuit modification.

Silver Growth on AFM Tip Apexes from Silver Nitrate Solutions Triggered by Focused-Ion-Beam Irradiation

MRS Advances ◽  
2016 ◽  
Vol 1 (25) ◽  
pp. 1865-1869 ◽  
Author(s):  
Masayuki Nishi ◽  
Daisuke Teranishi ◽  
Hiroki Itasaka ◽  
Masahiro Shimizu ◽  
Kazuyuki Hirao
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Silver Ions ◽  
Native Oxide ◽  
Silver Nanostructures ◽  
Native Oxide Layer ◽  
Silver Nanostructure ◽  
Afm Probe ◽  
The Difference ◽  
Silver Nitrate Solutions

ABSTRACTSilver nanostructures are directly grown on the apex of commercially available silicon AFM probes using our area-selective electroless deposition: the apex of a silicon AFM probe is irradiated using a focused ion beam (FIB), and then the FIB-irradiated AFM probe is exposed to a pure AgNO3aqueous solution. With this method, a silver nanostructure selectively grows on the tip apex where the native oxide layer has been removed in response to FIB irradiation. Silver ions are reduced by the electrons flowing from the silicon probes into the solution through the FIB-irradiated area owing to the difference in Fermi energy between silicon and the solution. The morphology of the growing silver depends on the concentration of both AgNO3and the electrons. The growth of a gold nanoflower is also demonstrated on the apex of a silicon AFM probe.

Automatic Determination of Optimal FIB Operations for Improved Circuit Probing and Fast Reconfiguration

2000 ◽  
Author(s):  
Romain Desplats ◽  
Timothee Dargnies ◽  
Jean-Christophe Courrege ◽  
Philippe Perdu ◽  
Jean-Louis Noullet
Keyword(s):  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Front Side ◽  
Automatic Determination ◽  
Metal Line ◽  
New Approach ◽  
Metal Layers

Abstract Focused Ion Beam (FIB) tools are widely used for Integrated Circuit (IC) debug and repair. With the increasing density of recent semiconductor devices, FIB operations are increasingly challenged, requiring access through 4 or more metal layers to reach a metal line of interest. In some cases, accessibility from the front side, through these metal layers, is so limited that backside FIB operations appear to be the most appropriate approach. The questions to be resolved before starting frontside or backside FIB operations on a device are: 1. Is it do-able, are the metal lines accessible? 2. What is the optimal positioning (e.g. accessing a metal 2 line is much faster and easier than digging down to a metal 6 line)? (for the backside) 3. What risk, time and cost are involved in FIB operations? In this paper, we will present a new approach, which allows the FIB user or designer to calculate the optimal FIB operation for debug and IC repair. It automatically selects the fastest and easiest milling and deposition FIB operations.

To Eliminate Curtain Effect of FIB TEM Samples by a Combination of Sample Dicing and Backside Milling

2014 ◽  
Author(s):  
Jian-Shing Luo ◽  
Hsiu Ting Lee
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Low Cost ◽  
Ion Beam ◽  
Sample Preparation Method ◽  
Site Specific ◽  
Dual Beam ◽  
Transmission Electron

Abstract Several methods are used to invert samples 180 deg in a dual beam focused ion beam (FIB) system for backside milling by a specific in-situ lift out system or stages. However, most of those methods occupied too much time on FIB systems or requires a specific in-situ lift out system. This paper provides a novel transmission electron microscopy (TEM) sample preparation method to eliminate the curtain effect completely by a combination of backside milling and sample dicing with low cost and less FIB time. The procedures of the TEM pre-thinned sample preparation method using a combination of sample dicing and backside milling are described step by step. From the analysis results, the method has applied successfully to eliminate the curtain effect of dual beam FIB TEM samples for both random and site specific addresses.

Investigations of Leakage Paths in Sub-0.35μm DRAM Products Using Advanced Focused Ion Beam Techniques

1998 ◽  
Author(s):  
H. Lorenz ◽  
C. Engel
Keyword(s):  
Focused Ion Beam ◽  
Cell Function ◽  
Dielectric Breakdown ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Floating Gate ◽  
Leakage Path ◽  
Contrast Technique ◽  
Voltage Contrast

Abstract Due to the continuously decreasing cell size of DRAMs and concomitantly diminishing thickness of some insulating layers new failure mechanisms appear which until now had no significance for the cell function. For example high resistance leakage paths between closely spaced conductors can lead to retention problems. These are hard to detect by electrical characterization in a memory tester because the involved currents are in the range of pA. To analyze these failures we exploit the very sensitive passive voltage contrast of the Focused Ion Beam Microscope (FIB). The voltage contrast can further be enhanced by in-situ FIB preparations to obtain detailed information about the failure mechanism. The first part of this paper describes a method to detect a leakage path between a borderless contact on n-diffusion and an adjacent floating gate by passive voltage contrast achieved after FIB circuit modification. In the second part we will demonstrate the localization of a DRAM trench dielectric breakdown. In this case the FIB passive voltage contrast technique is not limited to the localization of the failing trench. We can also obtain the depth of the leakage path by selective insitu etching with XeF2 stopped immediately after a voltage contrast change.

scholarly journals Cyclic Deformation of Microcantilevers Using In-Situ Micromanipulation

2021 ◽  
Author(s):  
A. H. S. Iyer ◽  
M. H. Colliander
Keyword(s):  
Degrees Of Freedom ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Structural Components ◽  
Cyclic Testing ◽  
Phase Boundaries ◽  
Bulk Specimen ◽  
Arbitrary Position ◽  
Three Degrees Of Freedom

Abstract Background The trend in miniaturisation of structural components and continuous development of more advanced crystal plasticity models point towards the need for understanding cyclic properties of engineering materials at the microscale. Though the technology of focused ion beam milling enables the preparation of micron-sized samples for mechanical testing using nanoindenters, much of the focus has been on monotonic testing since the limited 1D motion of nanoindenters imposes restrictions on both sample preparation and cyclic testing. Objective/Methods In this work, we present an approach for cyclic microcantilever bending using a micromanipulator setup having three degrees of freedom, thereby offering more flexibility. Results The method has been demonstrated and validated by cyclic bending of Alloy 718plus microcantilevers prepared on a bulk specimen. The experiments reveal that this method is reliable and produces results that are comparable to a nanoindenter setup. Conclusions Due to the flexibility of the method, it offers straightforward testing of cantilevers manufactured at arbitrary position on bulk samples with fully reversed plastic deformation. Specific microstructural features, e.g., selected orientations, grain boundaries, phase boundaries etc., can therefore be easily targeted.

scholarly journals Automated cryo-lamella preparation for high-throughput in-situ structural biology

2019 ◽  
Author(s):  
Genevieve Buckley ◽  
Gediminas Gervinskas ◽  
Cyntia Taveneau ◽  
Hari Venugopal ◽  
James C. Whisstock ◽  
...  
Keyword(s):  
Saccharomyces Cerevisiae ◽  
Structural Biology ◽  
Focused Ion Beam ◽  
Electron Tomography ◽  
Ion Beam ◽  
Automated Method ◽  
Cellular Environment ◽  
Transmission Electron

AbstractCryo-transmission electron tomography (cryo-ET) in association with cryo-focused ion beam (cryo-FIB) milling enables structural biology studies to be performed directly within the cellular environment. Cryo-preserved cells are milled and a lamella with a thickness of 200-300 nm provides an electron transparent window suitable for cryo-ET imaging. Cryo-FIB milling is an effective method, but it is a tedious and time-consuming process, which typically results in ~10 lamellae per day. Here, we introduce an automated method to reproducibly prepare cryo-lamellae on a grid and reduce the amount of human supervision. We tested the routine on cryo-preserved Saccharomyces cerevisiae and demonstrate that this method allows an increased throughput, achieving a rate of 5 lamellae/hour without the need to supervise the FIB milling. We demonstrate that the quality of the lamellae is consistent throughout the preparation and their compatibility with cryo-ET analyses.

Fabrication of Sub-250nm High Aspect Ratio Apertures by Focused Ion Beam Lithography

2006 ◽  
Vol 983 ◽  
Author(s):  
Todd Simpson ◽  
Ian V Mitchell
Keyword(s):  
Silicon Nitride ◽  
High Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Gold Films ◽  
Ion Beam Lithography ◽  
Diameter Hole ◽  
Sem Imaging ◽  
Aperture Arrays

AbstractAperture arrays were fabricated in 1.0µm thick gold films supported on 20nm thick silicon nitride membranes. Lithographic milling strategies in gold were evaluated through the use of in-situ sectioning and high resolution SEM imaging with the UWO CrossBeam FIB/SEM. A successful strategy for producing a 250nm diameter hole with sidewalls approaching vertical is summarized.

In situ removal of a native oxide layer from an amorphous silicon surface with a UV laser for subsequent layer growth

CrystEngComm ◽  
2018 ◽  
Vol 20 (44) ◽  
pp. 7170-7177 ◽  
Author(s):  
Christian Ehlers ◽  
Stefan Kayser ◽  
David Uebel ◽  
Roman Bansen ◽  
Toni Markurt ◽  
...  
Keyword(s):  
Laser Pulse ◽  
Amorphous Silicon ◽  
Oxide Layer ◽  
Silicon Surface ◽  
Layer Growth ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Uv Laser ◽  
Subsequent Layer

An in situ method for selectively heating a substrate by a laser pulse was modelled and investigated experimentally.

Thermal stability of Pt nanowires manufactured by Ga+ focused ion beam (FIB)

2003 ◽  
Vol 777 ◽  
Author(s):  
B.J. Inkson ◽  
G. Dehm
Keyword(s):  
Thermal Stability ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Wire Surface ◽  
Cross Sectional ◽  
Partial Crystallization ◽  
Fcc Structure ◽  
Thermal Stability Of ◽  
Pt Nanowires

AbstractPt nanowires have been produced by FIB deposition of Pt thin films in a commercial Ga+ focused ion beam (FIB) system, followed by cross-sectional sputtering to form electron transparent Pt nanowires. The thermal stability of amorphous FIB manufactured Pt wires has been investigated by in-situ thermal cycling in a TEM. The Pt wires are stable up to 580-650°C where partial crystallization is observed in vacuum. Facetted nanoparticles grow on the wire surface, growing into free space by surface diffusion and minimising contact area with the underlying wire. The particles are fcc Pt with some dissolved Ga. Continued heating results in particle spheroidization, coalescence and growth, retaining the fcc structure.

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