A novel vacuum lithography with SiNx resist for focused ion beam exposure and dry etching development

1991 ◽  
Author(s):  
S. Takahashi ◽  
M. Ohashi ◽  
S. Fukatsu ◽  
Y. Shiraki ◽  
R. Ito
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Dry Etching ◽  
Vacuum Lithography

Deep Structures Produced in III-V Materials by Combined Focused Ion Beam Irradiation and Dry Etching

1989 ◽  
Vol 158 ◽  
Author(s):  
L.R. Harriott ◽  
Y.L. Wang ◽  
B.H. Chin ◽  
H. Temkin
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Dry Etching ◽  
Surface Pattern ◽  
Gas Source ◽  
Direct Patterning ◽  
Ion Energies ◽  
Micron Diameter ◽  
Vacuum Lithography

ABSTRACTWe have developed a direct patterning process for InP based materials which uses ion exposure followed by dry etching to produce surface topography. The substrate is first implanted with a 20 keV Ga+ beam focused to 0.2 micron diameter. The surface pattern is then developed in the substrate by etching with or without a low energy (25 -100 eV) flood Ar+ ion beam in a C12(5×10-4 Torr) atmosphere at 180 to 2000 C. This process has been integrated in a common vacuum chamber with a gas source molecular beam epitaxy (GSMBE) system. In-situ patterning and high quality overgrowth has been demonstrated for low Ar+ ion energies during etching. In this paper, we will describe a model for the patterning mechanism and suggest how it may be exploited to achieve a complete vacuum lithography process compatible with epitaxial regrowth.

Reduced Time for Uniform Etching of Cu Power Planes during FIB Editing

2003 ◽  
Vol 766 ◽  
Author(s):  
V.V. Makarov ◽  
W.B. Thompson ◽  
T.R. Lundquist
Keyword(s):  
Etch Rate ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Dry Etching ◽  
Reduced Time

AbstractDry etching of Cu challenges the Focused Ion Beam (FIB) removal of metallizations. Cu metallizations are comprised of numerous, randomly orientated crystallites. Each orientation shows a different etch rate under ion bombardment, leading to unacceptable damage to underlying dielectric. An improved methodology for uniform Cu etching over dielectric consists of three steps: 1) Exposure, 2) Initial off-normal bombardment and 3) Chemistry assisted ion bombardment. Comparison is made with and without preliminary off-normal bombardment. It is shown that Cu etching preceded by off-normal bombardment was completed ∼50% sooner with decreased dielectric over-etch.

Focused ion-beam vacuum lithography of InP with an ultrathin native oxide resist

1991 ◽  
Author(s):  
Yuh-Lin Wang ◽  
Henryk Temkin ◽  
Lloyd R. Harriott ◽  
Robert A. Hamm
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Native Oxide ◽  
Vacuum Lithography

Nanometer scale focused ion beam vacuum lithography using an ultrathin oxide resist

1991 ◽  
Author(s):  
Lloyd R. Harriott ◽  
Henryk Temkin ◽  
C. H. Chu ◽  
Yuh-Lin Wang ◽  
Y. F. Hsieh ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Nanometer Scale ◽  
Ultrathin Oxide ◽  
Vacuum Lithography
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