A focused ion beam vacuum lithography process compatible with gas source molecular beam epitaxy

1989 ◽  
Vol 7 (6) ◽  
pp. 1467 ◽  
Author(s):  
L. R. Harriott
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Lithography Process ◽  
Gas Source ◽  
Vacuum Lithography

Transport Properties of Modulation-Doped Structures Grown by Molecular Beam Epitaxy after Focused Ion Beam Implantation

1994 ◽  
Vol 33 (Part 1, No. 1B) ◽  
pp. 771-774 ◽  
Author(s):  
Masayuki Itoh ◽  
Tadashi Saku ◽  
Toshimasa Fujisawa ◽  
Yoshiro Hirayama ◽  
Seigo Tarucha
Keyword(s):  
Molecular Beam Epitaxy ◽  
Transport Properties ◽  
Molecular Beam ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Implantation

Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy

2017 ◽  
Vol 470 ◽  
pp. 46-50 ◽  
Author(s):  
Sven Scholz ◽  
Rüdiger Schott ◽  
Patrick A. Labud ◽  
Christoph Somsen ◽  
Dirk Reuter ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Inas Nanowires

Deep Structures Produced in III-V Materials by Combined Focused Ion Beam Irradiation and Dry Etching

1989 ◽  
Vol 158 ◽  
Author(s):  
L.R. Harriott ◽  
Y.L. Wang ◽  
B.H. Chin ◽  
H. Temkin
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Dry Etching ◽  
Surface Pattern ◽  
Gas Source ◽  
Direct Patterning ◽  
Ion Energies ◽  
Micron Diameter ◽  
Vacuum Lithography

ABSTRACTWe have developed a direct patterning process for InP based materials which uses ion exposure followed by dry etching to produce surface topography. The substrate is first implanted with a 20 keV Ga+ beam focused to 0.2 micron diameter. The surface pattern is then developed in the substrate by etching with or without a low energy (25 -100 eV) flood Ar+ ion beam in a C12(5×10-4 Torr) atmosphere at 180 to 2000 C. This process has been integrated in a common vacuum chamber with a gas source molecular beam epitaxy (GSMBE) system. In-situ patterning and high quality overgrowth has been demonstrated for low Ar+ ion energies during etching. In this paper, we will describe a model for the patterning mechanism and suggest how it may be exploited to achieve a complete vacuum lithography process compatible with epitaxial regrowth.

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