Nanometer scale focused ion beam vacuum lithography using an ultrathin oxide resist

Author(s):  
Lloyd R. Harriott ◽  
Henryk Temkin ◽  
C. H. Chu ◽  
Yuh-Lin Wang ◽  
Y. F. Hsieh ◽  
...  
2008 ◽  
Vol 93 (18) ◽  
pp. 183509 ◽  
Author(s):  
David Cooper ◽  
Jean-Michel Hartmann ◽  
Bernard Aventurier ◽  
Francois Templier ◽  
Amal Chabli

2005 ◽  
Vol 76 (2) ◽  
pp. 026105 ◽  
Author(s):  
D. Petit ◽  
C. C. Faulkner ◽  
S. Johnstone ◽  
D. Wood ◽  
R. P. Cowburn

2006 ◽  
Vol 960 ◽  
Author(s):  
Warren MoberlyChan

ABSTRACTIon beams have been used to modify surface topography, producing nanometer-scale modulations (and even subnanometer ripples in this work) that have potential uses ranging from designing self-assembly structures, to controlling stiction of micromachined surfaces, to providing imprint templates for patterned media. Modern computer-controlled Focused Ion Beam tools enable alternating submicron patterned zones of such ion-eroded surfaces, as well as dramatically increasing the rate of ion beam processing. The DualBeam FIB/SEM also expedites process development while minimizing the use of materials that may be precious (Diamond) and/or produce hazardous byproducts (Beryllium). A FIB engineer can prototype a 3-by-3-by-3 matrix of variables in tens of minutes and consume as little as zeptoliters of material; whereas traditional ion beam processing would require tens of days and tens of precious wafers. Saturation wavelengths have been reported for ripples on materials such as single crystal silicon or diamond (∼200nm); however this work achieves wavelengths >400nm on natural diamond. Conversely, Be can provide a stable and ordered 2-dimensional array of <40nm periodicity. Also ripples <0.4nm are fabricated on carbon-base surfaces, and these quantized picostructures are measured by HR-TEM and electron diffraction. Rippling is a function of material, ion beam, and angle; but is also controlled by chemical environment, redeposition, and aspect ratio. Ideally a material has a constant yield (atoms sputtered off per incident ion); however, pragmatic FIB processes, coupled with the direct metrological feedback in a DualBeam tool, reveal etch rates do not remain constant for nanometer-scale processing. Control of rippling requires controlled metrology, and robust software tools are developed to enhance metrology. In situ monitoring of the influence of aspect ratio and redeposition at the micron scale correlates to the rippling fundamentals that occur at the nanometer scale and are controlled by the boundary conditions of FIB processing.


2007 ◽  
Vol 121-123 ◽  
pp. 777-780
Author(s):  
Kai Ge Wang ◽  
Peng Ye Wang ◽  
Shuang Lin Yue ◽  
Ai Zi Jin ◽  
Chang Zhi Gu ◽  
...  

In the emerging field of nanobiotechnology, further downsizing the fluidic channels and pores to the nanometer scale are attractive for both fundamental studies and technical applications. The insulation Silicon nitride membrane nanofluidic channel arrays which have width ~50nm and depth ~80nm and length ≥20μm were created by focused-ion-beam instrument. The λ-DNA molecules were put inside nanochannels and transferred, a fluorescence microscopy was used to observe the images. Only by capillary force, λ-DNA molecules moved inside the nanochannels which dealt with activating reagent Brij aqueous solution. These scope nanostructure devices will help us study DNA transporting through a nanopore and understand more DNA dynamics characteristics.


2021 ◽  
Vol 13 (36) ◽  
pp. 43209-43220
Author(s):  
Mitchell Semple ◽  
Aaron C. Hryciw ◽  
Peng Li ◽  
Eric Flaim ◽  
Ashwin K. Iyer

1991 ◽  
Author(s):  
Yuh-Lin Wang ◽  
Henryk Temkin ◽  
Lloyd R. Harriott ◽  
Robert A. Hamm

2000 ◽  
Vol 6 (S2) ◽  
pp. 502-503
Author(s):  
B. I. Prenitzer ◽  
B. W. Kempshall ◽  
S. M. Schwarz ◽  
L. A. Giannuzzi ◽  
F. A. Stevie

Nanometer scale, high resolution Ga+ ion probes, attainable in commercially available focused ion beam (FIB) instruments, allow imaging, sputtering and deposition operations to be performed with a high degree of spatial precision. Of particular interest is how this precision milling/deposition capability has enabled a wide range of site specific micromachining and microfabrication operations (e.g., TEM, SEM, SIMS, and AUGER specimen preparation and circuit modification). The applications of FIB instruments frequently involve the creation of high aspect ratio features (i.e., deep narrow trenches). Ideally, the sidewalls of an FIB milled feature should be vertical; however, it has been generally observed that the trenches tend to exhibit a gradual sloping. The observed deviation from vertical milling has been attributed to the redeposition of sputtered material, and is especially pervasive at high beam currents and confining trench geometries. A hole milled with an FIB tends to be widest at the top surface and taper down to a point at the bottom.


Author(s):  
Jack Zhou ◽  
Guoliang Yang

There are three major steps toward the fabrication of a single-digit nanohole: (1) preparing the free-standing thin film by epitaxial deposition and electrochemical etching, (2) making submicron holes (0.2–0.02 μm) by focused ion beam (FIB), and (3) reducing the hole to less than 10 nm by FIB-induced deposition. One specific aim for this paper is to model, simulate, and control the focused ion-beam machining process to fabricate holes that can reach a single-digit nanometer scale on solid-state thin films. Preliminary work has been done on the thin film (30 nm in thickness) preparation, submicron hole fabrication, and ion-beam-induced deposition, and the results are presented.


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