Dual-chamber ultra line-narrowed excimer light source for 193-nm lithography

2003 ◽  
Author(s):  
Vladimir B. Fleurov ◽  
Daniel J. Colon III ◽  
Daniel J. W. Brown ◽  
Patrick O'Keeffe ◽  
Herve Besaucele ◽  
...  
Keyword(s):  
Light Source ◽  
Dual Chamber ◽  
193 Nm ◽  
Excimer Light Source

scholarly journals Electron-beam–ignited, high-frequency–driven vacuum ultraviolet excimer light source

2011 ◽  
Vol 94 (5) ◽  
pp. 53001 ◽  
Author(s):  
T. Dandl ◽  
H. Hagn ◽  
T. Heindl ◽  
R. Krücken ◽  
J. Wieser ◽  
...  
Keyword(s):  
Electron Beam ◽  
Light Source ◽  
High Frequency ◽  
Vacuum Ultraviolet ◽  
Excimer Light Source

Reduction of EUV resist damage by neutral beam etching

2021 ◽  
Author(s):  
Gyo Wun Kim ◽  
Won Jun Chang ◽  
Ji Eun Kang ◽  
Hee Ju Kim ◽  
Geun Young Yeom
Keyword(s):  
Radiation Damage ◽  
Light Source ◽  
Ion Beam ◽  
Critical Dimension ◽  
Neutral Beam ◽  
Etch Depth ◽  
Etching Selectivity ◽  
193 Nm ◽  
20 Nm ◽  
Neutral Beam Etching

Abstract Even though EUV lithography has the advantage of implenting a finer pattern compared to ArF immersion lithography due to the use of 13.5 nm instead of 193 nm as the wavelengh of the light source, due to the low energy of EUV light source, EUV resist has a thinner thickness than conventional ArF resist. EUV resist having such a thin thickness is more vulnerable to radiation damage received during the etching because of its low etch resistance and also tends to have a problem of low etch selectivity. In this study, the radiation damage to EUV resist during etching of hardmask materials such as Si3N4, SiO2, etc. using CF4 gas was compared between neutral beam etching (NBE) and ion beam etching (IBE). When NBE was used, after the etching of 20 nm thick EUV resist, the line edge roughness (LER) increase and the critical dimension (CD) change of EUV resist were reduced by ~ 1/3 and ~ 1/2, respectively, compared to those by IBE. Also, at that EUV etch depth, the RMS(root mean square) surface roughness value of EUV resist etched by NBE was ~2/3 compared to that by IBE on the average. It was also confirmed that the etching selectivity between SiO2, Si3N4, etc. and EUV resist was higher for NBE compared to IBE. The less damage to the EUV resist and the higher etch selectivity of materials such as Si3N4 and SiO2 over EUV resist for NBE compared to IBE are believed to be related to the no potential energy released by the neutralization of the ions during the etching for NBE.

6 kHz MOPA light source for 193 nm immersion lithography

2005 ◽  
Author(s):  
Walter D. Gillespie ◽  
Toshihiko Ishihara ◽  
William N. Partlo ◽  
George X. Ferguson ◽  
Michael R. Simon
Keyword(s):  
Light Source ◽  
Immersion Lithography ◽  
193 Nm

Vacuum ultraviolet rare gas excimer light source

1997 ◽  
Vol 68 (3) ◽  
pp. 1360-1364 ◽  
Author(s):  
J. Wieser ◽  
D. E. Murnick ◽  
A. Ulrich ◽  
H. A. Huggins ◽  
A. Liddle ◽  
...  
Keyword(s):  
Light Source ◽  
Vacuum Ultraviolet ◽  
Rare Gas ◽  
Excimer Light Source

A simple and practical 157nm and 193 nm coherent light source

2008 ◽  
Author(s):  
Xiaoshi Zhang ◽  
Hsia-Hua Liu ◽  
Dirk Muller ◽  
Sterling Backus
Keyword(s):  
Light Source ◽  
Coherent Light ◽  
193 Nm ◽  
Coherent Light Source

Efficient, stable, corona discharge 172 nm xenon excimer light source

2003 ◽  
Vol 94 (6) ◽  
pp. 3722-3731 ◽  
Author(s):  
M. Salvermoser ◽  
D. E. Murnick
Keyword(s):  
Corona Discharge ◽  
Light Source ◽  
Excimer Light Source

387-nm Generation in GdxY1-xCa4O(BO3)3Crystal and Its Utilization for 193-nm Light Source

2003 ◽  
Vol 42 (Part 2, No. 2B) ◽  
pp. L166-L169 ◽  
Author(s):  
Hiroshi Kitano ◽  
Hitoshi Kawai ◽  
Ken-ichi Muramatsu ◽  
Soichi Owa ◽  
Masashi Yoshimura ◽  
...  
Keyword(s):  
Light Source ◽  
193 Nm

scholarly journals Mask-aligner Talbot lithography using a 193 nm CW light source

2018 ◽  
Author(s):  
Andreas Vetter ◽  
Dmitrijs Opalevs ◽  
Matthias Scholz ◽  
Patrick Leisching ◽  
Raoul Kirner ◽  
...  
Keyword(s):  
Light Source ◽  
Mask Aligner ◽  
193 Nm
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