Structural, optical, and electrical characterization of ZnO/Zn 0.8 Mg 0.2 O quantum wells for UV applications

Author(s):  
Agisilaos A. Iliadis ◽  
Soumya Krishnamoorthy ◽  
Wei Yang ◽  
Supab Choopun ◽  
R. D. Vispute ◽  
...  
1993 ◽  
Vol 326 ◽  
Author(s):  
F. Yu ◽  
R. Droopad ◽  
G.N. Maracas ◽  
J. Liu ◽  
R. Rajesh ◽  
...  

2013 ◽  
Vol 102 (25) ◽  
pp. 252103 ◽  
Author(s):  
Geoffrey C. Gardner ◽  
John D. Watson ◽  
Sumit Mondal ◽  
Nianpei Deng ◽  
Gabor A. Csáthy ◽  
...  

2006 ◽  
Vol 45 (6B) ◽  
pp. 5478-5480 ◽  
Author(s):  
Eun Kyu Kim ◽  
Ji Sun Park ◽  
Jin Soak Kim ◽  
Il Ki Han ◽  
Jin Dong Song

Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.


1981 ◽  
Vol 4 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons

ABSTRACTStructural and electrical characterization of laser recrystallized LPCVD silicon films on amorphous substrates using a shaped cw laser beam have been performed. In comparing the results to data obtained using a circular beam, it was found that a significant increase in grain size can be achieved and that the surface morphology of the shaped beam recrystallized material was much smoother. It was also found that whereas circular beam recrystallized material has a random grain structure, shaped beam material is highly oriented with a <100> texture. Finally the electrical characteristics of the recrystallized film were very good when measured in directions parallel to the grain boundaries.


2011 ◽  
Vol E94-C (2) ◽  
pp. 157-163 ◽  
Author(s):  
Masakazu MUROYAMA ◽  
Ayako TAJIRI ◽  
Kyoko ICHIDA ◽  
Seiji YOKOKURA ◽  
Kuniaki TANAKA ◽  
...  

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