Electrical Characterization of Highly Strained Ultrathin InAs/GaAs Quantum Wells

1993 ◽  
Vol 326 ◽  
Author(s):  
F. Yu ◽  
R. Droopad ◽  
G.N. Maracas ◽  
J. Liu ◽  
R. Rajesh ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electrical Characterization ◽  
Highly Strained

scholarly journals Growth and electrical characterization of Al0.24Ga0.76As/AlxGa1−xAs/Al0.24Ga0.76As modulation-doped quantum wells with extremely low x

2013 ◽  
Vol 102 (25) ◽  
pp. 252103 ◽  
Author(s):  
Geoffrey C. Gardner ◽  
John D. Watson ◽  
Sumit Mondal ◽  
Nianpei Deng ◽  
Gabor A. Csáthy ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electrical Characterization ◽  
Low X

Structural, optical, and electrical characterization of ZnO/Zn 0.8 Mg 0.2 O quantum wells for UV applications

2002 ◽  
Author(s):  
Agisilaos A. Iliadis ◽  
Soumya Krishnamoorthy ◽  
Wei Yang ◽  
Supab Choopun ◽  
R. D. Vispute ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electrical Characterization

Structural and optical characterization of highly-strained BInGaAs/GaAs quantum wells

2012 ◽  
Author(s):  
Zhigang Jia ◽  
Qi Wang ◽  
Xiaomin Ren ◽  
Yingce Yan ◽  
Shiwei Cai ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Characterization ◽  
Highly Strained

Structural and optical characterization of highly-strained BInGaAs/GaAs quantum wells

2012 ◽  
Author(s):  
Zhigang Jia ◽  
Qi Wang ◽  
Xiaomin Ren ◽  
Yingce Yan ◽  
Shiwei Cai ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Characterization ◽  
Highly Strained

Optical characterization of highly strained InxGa1−xAs/GaAs single quantum wells

1996 ◽  
Author(s):  
J. Luyo-Alvarado ◽  
M. Meléndez-Lira ◽  
M. López-López
Keyword(s):  
Quantum Wells ◽  
Optical Characterization ◽  
Single Quantum ◽  
Highly Strained

Electrical Characterization of GaAs/AlGaAs Multi-Quantum Wells for Quantum Cascade Laser

2006 ◽  
Vol 45 (6B) ◽  
pp. 5478-5480 ◽  
Author(s):  
Eun Kyu Kim ◽  
Ji Sun Park ◽  
Jin Soak Kim ◽  
Il Ki Han ◽  
Jin Dong Song
Keyword(s):  
Quantum Wells ◽  
Quantum Cascade Laser ◽  
Electrical Characterization ◽  
Quantum Cascade

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

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