Electrical characterization of InGaAs/InP quantum wells by scanning capacitance microscopy

2003 ◽  
Vol 83 (20) ◽  
pp. 4205-4207 ◽  
Author(s):  
K. Maknys ◽  
O. Douhéret ◽  
S. Anand
Keyword(s):  
Quantum Wells ◽  
Electrical Characterization ◽  
Scanning Capacitance Microscopy

Analysis of an Anomalous CMOS Transistor Exhibiting Drain to Source Leakage—Its Model and Cause

2014 ◽  
Author(s):  
Yuk L. Tsang ◽  
Alex VanVianen ◽  
Xiang D. Wang ◽  
N. David Theodore
Keyword(s):  
Threshold Voltage ◽  
Crystalline Silicon ◽  
Electrical Characterization ◽  
Visual Defect ◽  
Scanning Capacitance Microscopy ◽  
Device Model ◽  
Graphical Simulation ◽  
Cmos Transistor

Abstract In this paper, we report a device model that has successfully described the characteristics of an anomalous CMOS NFET and led to the identification of a non-visual defect. The model was based on detailed electrical characterization of a transistor exhibiting a threshold voltage (Vt) of about 120mv lower than normal and also exhibiting source to drain leakage. Using a simple graphical simulation, we predicted that the anomalous device was a transistor in parallel with a resistor. It was proposed that the resistor was due to a counter doping defect. This was confirmed using Scanning Capacitance Microscopy (SCM). The dopant defect was shown by TEM imaging to be caused by a crystalline silicon dislocation.

Electrical Characterization of Highly Strained Ultrathin InAs/GaAs Quantum Wells

1993 ◽  
Vol 326 ◽  
Author(s):  
F. Yu ◽  
R. Droopad ◽  
G.N. Maracas ◽  
J. Liu ◽  
R. Rajesh ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electrical Characterization ◽  
Highly Strained

scholarly journals Growth and electrical characterization of Al0.24Ga0.76As/AlxGa1−xAs/Al0.24Ga0.76As modulation-doped quantum wells with extremely low x

2013 ◽  
Vol 102 (25) ◽  
pp. 252103 ◽  
Author(s):  
Geoffrey C. Gardner ◽  
John D. Watson ◽  
Sumit Mondal ◽  
Nianpei Deng ◽  
Gabor A. Csáthy ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electrical Characterization ◽  
Low X

Scanning Capacitance Microscopy for Failure Analysis of SOI-Based Advanced Microprocessors

2010 ◽  
Author(s):  
Lim Soon Huat ◽  
Lwin Hnin-Ei ◽  
Vinod Narang ◽  
J.M. Chin
Keyword(s):  
Failure Analysis ◽  
Electrical Characterization ◽  
Silicon On Insulator ◽  
Large Area ◽  
Scanning Capacitance Microscopy ◽  
Electrical Failure ◽  
Silicon Transistors ◽  
Soi Substrates ◽  
Electrical Data

Abstract Scanning capacitance microscopy (SCM) has been used in electrical failure analysis (EFA) to isolate failing silicon transistors on silicon-on-insulator (SOI) substrates. With the shrinking device geometry and increasing layout complexity, the defects in transistors are often non-visual and require detailed electrical analysis to pinpoint the defect signature. This paper demonstrates the use of SCM technique for EFA on SOI device substrates, as well as using this technique to isolate defective contacts in a relatively large-area scan of 25µm x 25µm. We also performed dC/dV electrical characterization of defective transistors, and correlated the data from SCM technique and electrical data from nano-probing to locate failing transistors.

Structural, optical, and electrical characterization of ZnO/Zn 0.8 Mg 0.2 O quantum wells for UV applications

2002 ◽  
Author(s):  
Agisilaos A. Iliadis ◽  
Soumya Krishnamoorthy ◽  
Wei Yang ◽  
Supab Choopun ◽  
R. D. Vispute ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electrical Characterization

Electrical Characterization of GaAs/AlGaAs Multi-Quantum Wells for Quantum Cascade Laser

2006 ◽  
Vol 45 (6B) ◽  
pp. 5478-5480 ◽  
Author(s):  
Eun Kyu Kim ◽  
Ji Sun Park ◽  
Jin Soak Kim ◽  
Il Ki Han ◽  
Jin Dong Song
Keyword(s):  
Quantum Wells ◽  
Quantum Cascade Laser ◽  
Electrical Characterization ◽  
Quantum Cascade
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