Growth and electrical characterization of Al0.24Ga0.76As/AlxGa1−xAs/Al0.24Ga0.76As modulation-doped quantum wells with extremely low x
2006 ◽
Vol 45
(6B)
◽
pp. 5478-5480
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1994 ◽
Vol 52
◽
pp. 736-737
1982 ◽
Vol 43
(C1)
◽
pp. C1-171-C1-185
◽
2011 ◽
Vol E94-C
(2)
◽
pp. 157-163
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