Characterization of an acetal-based chemically amplified resist for 257-nm laser mask fabrication

Author(s):  
Benjamen M. Rathsack ◽  
Cyrus E. Tabery ◽  
Jeff A. Albelo ◽  
Peter D. Buck ◽  
C. Grant Willson
2010 ◽  
Author(s):  
Jedsada Manyam ◽  
Mayandithevar Manickam ◽  
Jon A. Preece ◽  
Richard E. Palmer ◽  
Alex P. Robinson

2003 ◽  
Author(s):  
Bing Lu ◽  
Eric Weisbrod ◽  
Pawitter J. S. Mangat ◽  
Kevin J. Nordquist ◽  
Eric S. Ainley

2001 ◽  
Vol 705 ◽  
Author(s):  
J.R. Maldonado ◽  
M. Angelopoulos ◽  
W. Huang ◽  
R. L. Brainard ◽  
J. M. Guevremont ◽  
...  

AbstractThis paper describes stable, high sensitivity (5-10 μC/cm2 at 50 kV) e-beam resist systems utilizing chemical amplification suitable for mask fabrication for device generations below 100 nm. In particular, two resist systems with improved performance for mask fabrication developed in a joint program by Etec, IBM and Shipley will be described: a Si- doped version of the IBM KRS-XE resist (now commercially available) developed at IBM Research, and a new MANA resist developed at Shipley. Commercialization issues for mask e-beam resists also will be discussed.


Author(s):  
Toshiro Itani ◽  
Minoru Toriumi ◽  
Takuya Naito ◽  
Seiichi Ishikawa ◽  
Seiro Miyoshi ◽  
...  

1999 ◽  
Author(s):  
Janet M. Rocque ◽  
Michael J. Lercel ◽  
Cameron J. Brooks ◽  
Richard W. Henry ◽  
Douglas E. Benoit

1997 ◽  
Vol 10 (4) ◽  
pp. 609-612 ◽  
Author(s):  
Teruhiko Kumada ◽  
Hiroshi Adachi ◽  
Hiroshi Watanabe ◽  
Hiroaki Sumitani

1999 ◽  
Author(s):  
Benjamen M. Rathsack ◽  
Cyrus E. Tabery ◽  
Timothy B. Stachowiak ◽  
Tim E. Dallas ◽  
Cheng-Bai Xu ◽  
...  

2001 ◽  
Author(s):  
Christopher Magg ◽  
Michael J. Lercel ◽  
Mark Lawliss ◽  
Ranee W. Kwong ◽  
Wu-Song Huang ◽  
...  

2001 ◽  
Author(s):  
Bing Lu ◽  
Zorian S. Masnyj ◽  
Pawitter J. S. Mangat ◽  
Kevin J. Nordquist ◽  
Eric S. Ainley ◽  
...  

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