Full three-dimensional characterization of 25 nm lines for chemically amplified resist simulation

2005 ◽  
Vol 23 (6) ◽  
pp. 2733 ◽  
Author(s):  
S. Landis ◽  
S. Pauliac ◽  
J. Foucher ◽  
J. Thiault ◽  
F. de Crecy
Keyword(s):  
Three Dimensional ◽  
Chemically Amplified ◽  
Chemically Amplified Resist

Characterization of the effects of base additives on a fullerene chemically amplified resist

2010 ◽  
Author(s):  
Jedsada Manyam ◽  
Mayandithevar Manickam ◽  
Jon A. Preece ◽  
Richard E. Palmer ◽  
Alex P. Robinson
Keyword(s):  
Chemically Amplified ◽  
Chemically Amplified Resist

Characterization of an acetal-based chemically amplified resist for 257-nm laser mask fabrication

2001 ◽  
Author(s):  
Benjamen M. Rathsack ◽  
Cyrus E. Tabery ◽  
Jeff A. Albelo ◽  
Peter D. Buck ◽  
C. Grant Willson
Keyword(s):  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
Mask Fabrication

Characterization of fluoropolymers for 157 nm chemically amplified resist

2001 ◽  
Vol 19 (6) ◽  
pp. 2705 ◽  
Author(s):  
Toshiro Itani ◽  
Minoru Toriumi ◽  
Takuya Naito ◽  
Seiichi Ishikawa ◽  
Seiro Miyoshi ◽  
...  
Keyword(s):  
Chemically Amplified ◽  
Chemically Amplified Resist

scholarly journals Characterization of tBOC based chemically amplified resist for SR lithography.

1997 ◽  
Vol 10 (4) ◽  
pp. 609-612 ◽  
Author(s):  
Teruhiko Kumada ◽  
Hiroshi Adachi ◽  
Hiroshi Watanabe ◽  
Hiroaki Sumitani
Keyword(s):  
Chemically Amplified ◽  
Chemically Amplified Resist

scholarly journals Characterization of a non-chemically amplified resist for photomask fabrication using a 257-nm optical pattern generator

1999 ◽  
Author(s):  
Benjamen M. Rathsack ◽  
Cyrus E. Tabery ◽  
Timothy B. Stachowiak ◽  
Tim E. Dallas ◽  
Cheng-Bai Xu ◽  
...  
Keyword(s):  
Pattern Generator ◽  
Chemically Amplified ◽  
Optical Pattern ◽  
Chemically Amplified Resist

Characterization of 193 nm Chemically Amplified Resist during Post Exposure Bake and Post Exposure Delay

1999 ◽  
Vol 38 (Part 1, No. 12B) ◽  
pp. 7094-7098 ◽  
Author(s):  
Eun-Mi Lee ◽  
Moon-Gyu Sung ◽  
Young-Mi Lee ◽  
Young-Soo Sohn ◽  
Hye-Keun Oh
Keyword(s):  
Post Exposure ◽  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
Post Exposure Bake ◽  
193 Nm

Characterization of photosystem II with the atomic-force microscope

1992 ◽  
Vol 50 (2) ◽  
pp. 1146-1147
Author(s):  
Kathleen M. Marr ◽  
Mary K. Lyon
Keyword(s):  
Photosystem Ii ◽  
Atomic Force Microscope ◽  
Three Dimensional ◽  
Biologically Active ◽  
Atomic Force ◽  
Freeze Etching ◽  
Image Averaging ◽  
Oxygen Evolving ◽  
Averaging Techniques

Photosystem II (PSII) is different from all other reaction centers in that it splits water to evolve oxygen and hydrogen ions. This unique ability to evolve oxygen is partly due to three oxygen evolving polypeptides (OEPs) associated with the PSII complex. Freeze etching on grana derived insideout membranes revealed that the OEPs contribute to the observed tetrameric nature of the PSIl particle; when the OEPs are removed, a distinct dimer emerges. Thus, the surface of the PSII complex changes dramatically upon removal of these polypeptides. The atomic force microscope (AFM) is ideal for examining surface topography. The instrument provides a topographical view of individual PSII complexes, giving relatively high resolution three-dimensional information without image averaging techniques. In addition, the use of a fluid cell allows a biologically active sample to be maintained under fully hydrated and physiologically buffered conditions. The OEPs associated with PSII may be sequentially removed, thereby changing the surface of the complex by one polypeptide at a time.

convergent-beam diffraction from surfaces

1987 ◽  
Vol 45 ◽  
pp. 30-33
Author(s):  
J. A. Eades ◽  
A. E. Smith ◽  
D. F. Lynch
Keyword(s):  
Reciprocal Lattice ◽  
Three Dimensional ◽  
Grazing Incidence ◽  
Three Dimensions ◽  
Plane Figure ◽  
Transmission Electron ◽  
Convergent Beam ◽  
Beam Patterns ◽  
Beam Diffraction

It is quite simple (in the transmission electron microscope) to obtain convergent-beam patterns from the surface of a bulk crystal. The beam is focussed onto the surface at near grazing incidence (figure 1) and if the surface is flat the appropriate pattern is obtained in the diffraction plane (figure 2). Such patterns are potentially valuable for the characterization of surfaces just as normal convergent-beam patterns are valuable for the characterization of crystals.There are, however, several important ways in which reflection diffraction from surfaces differs from the more familiar electron diffraction in transmission.GeometryIn reflection diffraction, because of the surface, it is not possible to describe the specimen as periodic in three dimensions, nor is it possible to associate diffraction with a conventional three-dimensional reciprocal lattice.

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