UVN2-negative chemically amplified resist optimization for x-ray mask fabrication

1999 ◽  
Author(s):  
Janet M. Rocque ◽  
Michael J. Lercel ◽  
Cameron J. Brooks ◽  
Richard W. Henry ◽  
Douglas E. Benoit
Keyword(s):  
X Ray ◽  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
Mask Fabrication

Single-component chemically amplified resist materials for electron-beam and x-ray lithography

1991 ◽  
Author(s):  
Anthony E. Novembre ◽  
Woon W. Tai ◽  
Janet M. Kometani ◽  
James E. Hanson ◽  
Omkaram Nalamasu ◽  
...  
Keyword(s):  
Electron Beam ◽  
Single Component ◽  
X Ray ◽  
Chemically Amplified ◽  
Chemically Amplified Resist

Evaluation of a high-performance chemically amplified resist for EUVL mask fabrication

2003 ◽  
Author(s):  
Bing Lu ◽  
Eric Weisbrod ◽  
Pawitter J. S. Mangat ◽  
Kevin J. Nordquist ◽  
Eric S. Ainley
Keyword(s):  
High Performance ◽  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
Mask Fabrication

Chemically Amplified Resist Approaches for E-beam Lithography Mask Fabrication

2001 ◽  
Vol 705 ◽  
Author(s):  
J.R. Maldonado ◽  
M. Angelopoulos ◽  
W. Huang ◽  
R. L. Brainard ◽  
J. M. Guevremont ◽  
...  
Keyword(s):  
High Sensitivity ◽  
Chemical Amplification ◽  
Joint Program ◽  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
Si Doped ◽  
Improved Performance ◽  
Mask Fabrication

AbstractThis paper describes stable, high sensitivity (5-10 μC/cm2 at 50 kV) e-beam resist systems utilizing chemical amplification suitable for mask fabrication for device generations below 100 nm. In particular, two resist systems with improved performance for mask fabrication developed in a joint program by Etec, IBM and Shipley will be described: a Si- doped version of the IBM KRS-XE resist (now commercially available) developed at IBM Research, and a new MANA resist developed at Shipley. Commercialization issues for mask e-beam resists also will be discussed.

FT-IR Study of a Chemically Amplified Resist for X-ray Lithography

2003 ◽  
Vol 57 (7) ◽  
pp. 842-849 ◽  
Author(s):  
T. L. Tan ◽  
V. A. Kudryashov ◽  
B. L. Tan
Keyword(s):  
X Ray ◽  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
Ft Ir ◽  
Ir Study

Characterization of an acetal-based chemically amplified resist for 257-nm laser mask fabrication

2001 ◽  
Author(s):  
Benjamen M. Rathsack ◽  
Cyrus E. Tabery ◽  
Jeff A. Albelo ◽  
Peter D. Buck ◽  
C. Grant Willson
Keyword(s):  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
Mask Fabrication

Effect of Acid Diffusion on Resolution of a Chemically Amplified Resist in X-Ray Lithography

1991 ◽  
Vol 30 (Part 1, No. 10) ◽  
pp. 2619-2625 ◽  
Author(s):  
Jiro Nakamura ◽  
Hiroshi Ban ◽  
Kimiyoshi Deguchi ◽  
Akinobu Tanaka
Keyword(s):  
X Ray ◽  
Acid Diffusion ◽  
Chemically Amplified ◽  
Chemically Amplified Resist

Evaluation of an advanced chemically amplified resist for next-generation lithography mask fabrication

2001 ◽  
Author(s):  
Christopher Magg ◽  
Michael J. Lercel ◽  
Mark Lawliss ◽  
Ranee W. Kwong ◽  
Wu-Song Huang ◽  
...  
Keyword(s):  
Next Generation ◽  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
Next Generation Lithography ◽  
Mask Fabrication
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