Thermo-acousto-photonics for noncontact temperature measurement in silicon wafer processing

1999 ◽  
Author(s):  
Chii-Der S. Suh ◽  
G. Andrew Rabroker ◽  
Ravinder Chona ◽  
Christian P. Burger
Keyword(s):  
Temperature Measurement ◽  
Silicon Wafer ◽  
Wafer Processing

Drawdown-Effect of Lightpipes in Silicon Wafer Surface Temperature Measurements

2005 ◽  
Author(s):  
Yan Qu ◽  
Ekachai Puttitwong ◽  
John R. Howell ◽  
Ofodike A. Ezekoye ◽  
Kenneth S. Ball
Keyword(s):  
Surface Temperature ◽  
Temperature Measurement ◽  
Silicon Wafer ◽  
Wafer Surface ◽  
Temperature Calibration ◽  
Semiconductor Wafer ◽  
Technology Roadmap ◽  
Wafer Processing ◽  
Temperature Standard ◽  
The One

Lightpipe radiation thermometers (LPRTs) have been widely used for temperature measurement in the semiconductor industries. According to the International Technology Roadmap for Semiconductors 2004 (ITRS), temperatures for semiconductor wafer processing should be measurable to within an uncertainty of ± 1.5°C at 1,000 °C with temperature calibration traceable to ITS (international temperature standard)-90. To achieve this uncertainty, there are several issues associated with LPRTs to be resolved. The “draw-down effect” is the one that will be examined in this paper. We discuss this effect both experimentally and numerically in the temperature range of 500°C to 900°C.

Introduction to Silicon Wafer Processing

2021 ◽  
pp. 1-36
Author(s):  
Kumar Shubham ◽  
Ankaj Gupta
Keyword(s):  
Silicon Wafer ◽  
Wafer Processing

Multistep, In-Situ Single Wafer Processing - Materials, Device and Equipment Issues

1989 ◽  
Vol 146 ◽  
Author(s):  
J. R. Hauser ◽  
N. A. Masnari ◽  
M. A. Littlejohn
Keyword(s):  
Low Temperature ◽  
Silicon Wafer ◽  
Technology Research ◽  
Advantages And Disadvantages ◽  
Alternative Processing ◽  
Processing Approach ◽  
Equipment Development ◽  
Wafer Processing

ABSTRACTMultistep, in-situ single wafer processing is being explored as an alternative processing approach to standard batch silicon wafer processing. Advantages and disadvantages of this approach are explored and an evaluation given of the potential for future advanced, low temperature wafer processing. Multistep, single wafer processing offers many advantages for advanced device and IC development but much technology research and equipment development is needed to achieve its potential.

The Acoustic Micro Integrated Detection Technique for Silicon Wafer Processing

2012 ◽  
Vol 497 ◽  
pp. 151-155 ◽  
Author(s):  
An Yu Sun ◽  
Bing Feng Ju
Keyword(s):  
Silicon Wafer ◽  
Detection Method ◽  
Infrared Detector ◽  
Acoustic Microscope ◽  
Detection And Identification ◽  
Measurement Surface ◽  
Wafer Processing ◽  
Integrated Detection ◽  
Silicon Based ◽  
Scanning Acoustic Microscope

This document presents an integrated detection method for the whole cycle of silicon wafer processing based on Scanning Acoustic Microscope (SAM). It can be used for thickness and chamfering measurement, surface and subsurface testing, internal defects detection and identification. A SAM system was designed for silicon processing and silicon-based devices fabrication. It has more favorable measuring accuracy and quantitative analysis ability than the traditional inspection equipments using for wafer process such as infrared detector.

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