2021 ◽  
pp. 1-36
Author(s):  
Kumar Shubham ◽  
Ankaj Gupta

1989 ◽  
Vol 146 ◽  
Author(s):  
J. R. Hauser ◽  
N. A. Masnari ◽  
M. A. Littlejohn

ABSTRACTMultistep, in-situ single wafer processing is being explored as an alternative processing approach to standard batch silicon wafer processing. Advantages and disadvantages of this approach are explored and an evaluation given of the potential for future advanced, low temperature wafer processing. Multistep, single wafer processing offers many advantages for advanced device and IC development but much technology research and equipment development is needed to achieve its potential.


2011 ◽  
Vol 2011.19 (0) ◽  
pp. 177-178
Author(s):  
Haruma Chiba ◽  
Yutaro Ebina ◽  
Takeyuki Yamamoto ◽  
Hirotaka Ojima ◽  
Teppei Onuki ◽  
...  

1999 ◽  
Author(s):  
Chii-Der S. Suh ◽  
G. Andrew Rabroker ◽  
Ravinder Chona ◽  
Christian P. Burger

2012 ◽  
Vol 497 ◽  
pp. 151-155 ◽  
Author(s):  
An Yu Sun ◽  
Bing Feng Ju

This document presents an integrated detection method for the whole cycle of silicon wafer processing based on Scanning Acoustic Microscope (SAM). It can be used for thickness and chamfering measurement, surface and subsurface testing, internal defects detection and identification. A SAM system was designed for silicon processing and silicon-based devices fabrication. It has more favorable measuring accuracy and quantitative analysis ability than the traditional inspection equipments using for wafer process such as infrared detector.


2008 ◽  
Vol 74 (3) ◽  
pp. 275-281 ◽  
Author(s):  
Etsuji OHMURA ◽  
Masayoshi KUMAGAI ◽  
Kenshi FUKUMITSU ◽  
Makoto NAKANO ◽  
Naoki Uchiyama ◽  
...  

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