Drawdown-Effect of Lightpipes in Silicon Wafer Surface Temperature Measurements

2005 ◽  
Author(s):  
Yan Qu ◽  
Ekachai Puttitwong ◽  
John R. Howell ◽  
Ofodike A. Ezekoye ◽  
Kenneth S. Ball
Keyword(s):  
Surface Temperature ◽  
Temperature Measurement ◽  
Silicon Wafer ◽  
Wafer Surface ◽  
Temperature Calibration ◽  
Semiconductor Wafer ◽  
Technology Roadmap ◽  
Wafer Processing ◽  
Temperature Standard ◽  
The One

Lightpipe radiation thermometers (LPRTs) have been widely used for temperature measurement in the semiconductor industries. According to the International Technology Roadmap for Semiconductors 2004 (ITRS), temperatures for semiconductor wafer processing should be measurable to within an uncertainty of ± 1.5°C at 1,000 °C with temperature calibration traceable to ITS (international temperature standard)-90. To achieve this uncertainty, there are several issues associated with LPRTs to be resolved. The “draw-down effect” is the one that will be examined in this paper. We discuss this effect both experimentally and numerically in the temperature range of 500°C to 900°C.

Thermo-acousto-photonics for noncontact temperature measurement in silicon wafer processing

1999 ◽  
Author(s):  
Chii-Der S. Suh ◽  
G. Andrew Rabroker ◽  
Ravinder Chona ◽  
Christian P. Burger
Keyword(s):  
Temperature Measurement ◽  
Silicon Wafer ◽  
Wafer Processing

Meeting RTP Temperature Accuracy Requirements: Measurement and Calibrations at Nist

1998 ◽  
Vol 525 ◽  
Author(s):  
F. J. Lovas ◽  
B. K. Tsai ◽  
C. E. Gibson
Keyword(s):  
Uncertainty Analysis ◽  
Temperature Measurement ◽  
Line Width ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Temperature Calibration ◽  
Technical Challenge ◽  
Technology Roadmap ◽  
Radiometric Temperature Measurement ◽  
National Technology

ABSTRACTAlthough radiometric temperature measurement in rapid thermal processing (RTP) tools has substantially improved in terms of repeatability and uniformity, it still remains a technical challenge. The 1999 requirements of 180 nm line width technology in the 1997 National Technology Roadmap for Semiconductors (NTRS) imply an uncertainty of ± 2 °C in temperature measurement, which will continue the challenge in temperature measurement. In this paper we will discuss the NIST absolute radiometric temperature calibration, measurements, and uncertainty analysis.

In situSi Wafer Surface Temperature Measurement during Flash Lamp Annealing

2010 ◽  
Vol 49 (4) ◽  
pp. 04DA20 ◽  
Author(s):  
Yoshiro Yamada ◽  
Takayuki Aoyama ◽  
Hajime Chino ◽  
Kensuke Hiraka ◽  
Juntaro Ishii ◽  
...  
Keyword(s):  
Surface Temperature ◽  
Temperature Measurement ◽  
Flash Lamp ◽  
Wafer Surface ◽  
Surface Temperature Measurement

A Monte Carlo Model for Analyzing the Effects on Radiometric Temperature Measurement in Rapid Thermal Processor

2006 ◽  
Vol 505-507 ◽  
pp. 325-330
Author(s):  
Jen Chieh Tsao ◽  
Chiung Chieh Su
Keyword(s):  
Monte Carlo ◽  
Temperature Measurement ◽  
Good Accuracy ◽  
Monte Carlo Model ◽  
Radiation Thermometer ◽  
Effective Emissivity ◽  
Semiconductor Wafer ◽  
Wafer Processing ◽  
Radiometric Temperature Measurement

The radiometric temperature measurement is often applied to the in-situ and real-time monitor for rapid thermal processing of semiconductor wafer. To obtain good accuracy, the effective emissivity of measured spot is determined simultaneously as well. However, the effective emissivity strongly depends on the characteristics of wafer, processing chamber, and sensors. This paper presents a Monte Carlo model with bi-directional reflection distribution function to estimate the related effective emissivity of wafer. The ends of radiation thermometer considered are located either on the inner surface of processing chamber or at the proximity of wafer. The results are checked and compared with those of the previous work. Finally the primary effects on radiometric temperature measurement are analyzed and discussed.

scholarly journals DEPOSITION OF Al/SnAl OHMIC CONTACT ON SILICON FROM A LIQUID PHASE

2021 ◽  
Author(s):  
Vadym V. Tsybulenko ◽  
Stanislav V. Shutov ◽  
Oleg O. Boskin
Keyword(s):  
Liquid Phase ◽  
Silicon Wafer ◽  
Liquid Phase Epitaxy ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Contact Layer ◽  
Metal Films ◽  
Wafer Surface ◽  
Semiconductor Wafer

Background. Single- and multi-layer metal films are widely utilized in modern electronics and optoelectronics as ohmic contacts. As a rule, the films are deposited by thermal evaporation, ion sputtering and chemical vapour deposition. However the methods of deposition from a liquid phase are the most simple and cost-effective. Thus the ohmic contact deposition by these methods is still an actual problem. Objective. The purpose of the paper is to study the possibility of deposition of multi-layer ohmic metal films over a semiconductor wafer surface from a liquid phase, particularly by scanning liquid phase epitaxy technique. Methods. In this work we considered the influence of a long-term temperature gradient at the interface metallic solution-melt – semiconductor wafer on the possibility of deposition of multi-layer ohmic metal films on the semiconductor wafer surface during segmental contact between the solution-melt and the wafer. For this purpose we carried out the simulation of heat transport process, wafer wetting process as well as the process of wafer cleansing off the solution-melt taking into account capillary phenomena in the mask openings using the method of scanning liquid phase epitaxy. For experimental confirmation of adequacy of the model proposed we carried out the deposition of Al/SnAl layer on silicon wafer in the above mentioned conditions. Results. We have deposited the contact layer Al/SnAl on the surface of silicon wafer from Al-Sn solution-melt by scanning liquid phase epitaxy technique using supplementary heater for the wafer and mask installed in the apparatus. The contact layer is made as three identical pads located at different distance one from each other. By the analysis of current-voltage characteristic we determined that the metallic film contact with the semiconductor is a non-rectifying, i.e. ohmic contact. The specific contact resistance was determined by the Transmission Line Method using linear configuration of the contact pads (LTLM). Its value was 7.2∙10-4 Ohm·cm2. Conclusions. The principal possibility of obtaining of multi-layer ohmic contacts to the semiconductor by scanning liquid phase epitaxy technique in conditions of segmental contact between the solution-melt and the wafer as well as long-term gradient at the contact interface was shown. The conditions were realized by using extra heating of the wafer back side and the high-temperature mask through which the solution-melt contacted the wafer.

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