Applications of silicon-germanium-carbon in MOS and bipolar transistors

Self-Heating Effect in Silicon-Germanium Heterostructure Bipolar Transistors in Stress and Operating Conditions

2018 International Integrated Reliability Workshop (IIRW) ◽

10.1109/iirw.2018.8727095 ◽

2018 ◽

Cited By ~ 1

Author(s):

Francesco Maria Puglisi ◽

Marco Ghillini ◽

Luca Larcher ◽

Paolo Pavan

Keyword(s):

Silicon Germanium ◽

Bipolar Transistors ◽

Operating Conditions ◽

Heating Effect ◽

Self Heating

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SILICON: GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS; FROM EXPERIMENT TO TECHNOLOGY

Selected Topics in Electronics and Systems - Current Trends in Heterojunction Bipolar Transistors ◽

10.1142/9789812831309_0010 ◽

1996 ◽

pp. 367-385 ◽

Cited By ~ 6

Author(s):

B. S. MEYERSON ◽

D. L. HARAME ◽

J. STORK ◽

E. CRABBE ◽

J. COMFORT ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Silicon Germanium ◽

Bipolar Transistors

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Analysis of base recombination effect in very high maximum oscillation frequency silicon-germanium heterojunction bipolar transistors

(ICEEE). 1st International Conference on Electrical and Electronics Engineering, 2004. ◽

10.1109/iceee.2004.1433883 ◽

2005 ◽

Cited By ~ 1

Author(s):

G. Khanduri ◽

B.S. Panwar

Keyword(s):

Heterojunction Bipolar Transistors ◽

Silicon Germanium ◽

Oscillation Frequency ◽

Bipolar Transistors ◽

Maximum Oscillation Frequency ◽

High Maximum ◽

Very High ◽

Recombination Effect

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Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476) ◽

10.1109/eosesd.2000.890052 ◽

2002 ◽

Cited By ~ 17

Author(s):

S. Voldman ◽

P. Juliano ◽

J. Schmidt ◽

R. Johnson ◽

L. Lanzerotti ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Silicon Germanium ◽

Electrostatic Discharge ◽

Bipolar Transistors

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Electrostatic discharge and high current pulse characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) ◽

10.1109/relphy.2000.843932 ◽

2002 ◽

Cited By ~ 8

Author(s):

S. Voldman ◽

P. Juliano ◽

R. Johnson ◽

N. Schmidt ◽

A. Joseph ◽

...

Keyword(s):

Current Pulse ◽

Heterojunction Bipolar Transistors ◽

Silicon Germanium ◽

Electrostatic Discharge ◽

Bipolar Transistors ◽

High Current ◽

Pulse Characterization

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Novel chemical routes to silicon‐germanium‐carbon materials

Applied Physics Letters ◽

10.1063/1.112504 ◽

1994 ◽

Vol 65 (23) ◽

pp. 2960-2962 ◽

Cited By ~ 29

Author(s):

John Kouvetakis ◽

Michael Todd ◽

D. Chandrasekhar ◽

David J. Smith

Keyword(s):

Silicon Germanium ◽

Carbon Materials ◽

Silicon Germanium Carbon

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Doping profile and Ge-dose optimization for silicon–germanium heterojunction bipolar transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/24/10/105020 ◽

2009 ◽

Vol 24 (10) ◽

pp. 105020 ◽

Cited By ~ 1

Author(s):

Yiming Li ◽

Ying-Chieh Chen ◽

Chih-Hong Hwang

Keyword(s):

Heterojunction Bipolar Transistors ◽

Silicon Germanium ◽

Bipolar Transistors ◽

Doping Profile ◽

Dose Optimization

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The influence of process and design of subcollectors on the ESD robustness of ESD structures and silicon germanium heterojunction bipolar transistors in a BiCMOS SiGe technology

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. ◽

10.1109/relphy.2003.1197772 ◽

2003 ◽

Cited By ~ 3

Author(s):

S.H. Voldman ◽

L. Lanzerotti ◽

B. Ronan ◽

S. St Onge ◽

J. Dunn

Keyword(s):

Heterojunction Bipolar Transistors ◽

Silicon Germanium ◽

Bipolar Transistors

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UV-laser-assisted processing of thin silicon–germanium–carbon films

Thin Solid Films ◽

10.1016/j.tsf.2005.07.351 ◽

2006 ◽

Vol 508 (1-2) ◽

pp. 48-52 ◽

Cited By ~ 11

Author(s):

E. López ◽

S. Chiussi ◽

J. Serra ◽

P. González ◽

B. León

Keyword(s):

Silicon Germanium ◽

Carbon Films ◽

Uv Laser ◽

Thin Silicon ◽

Silicon Germanium Carbon

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Nuclear microbeam studies of silicon–germanium heterojunction bipolar transistors (HBTs)

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2010.02.016 ◽

2010 ◽

Vol 268 (11-12) ◽

pp. 2092-2098 ◽

Cited By ~ 9

Author(s):

G. Vizkelethy ◽

S.D. Phillips ◽

L. Najafizadeh ◽

J.D. Cressler

Keyword(s):

Heterojunction Bipolar Transistors ◽

Silicon Germanium ◽

Bipolar Transistors

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