Recent advances in 193-nm single-layer photoresists based on alternating copolymers of cycloolefins

1997 ◽  
Author(s):  
Francis M. Houlihan ◽  
Thomas I. Wallow ◽  
Allen G. Timko ◽  
E. Neria ◽  
Richard S. Hutton ◽  
...  
Keyword(s):  
Single Layer ◽  
Alternating Copolymers ◽  
Recent Advances ◽  
193 Nm

Evaluation of cycloolefin-maleic anhydride alternating copolymers as single-layer photoresists for 193-nm photolithography

1996 ◽  
Author(s):  
Thomas I. Wallow ◽  
Francis M. Houlihan ◽  
Omkaram Nalamasu ◽  
Edwin A. Chandross ◽  
Thomas X. Neenan ◽  
...  
Keyword(s):  
Maleic Anhydride ◽  
Single Layer ◽  
Alternating Copolymers ◽  
193 Nm

193-nm single-layer photoresists based on alternating copolymers of cycloolefins: the use of photogenerators of sulfamic acids

1998 ◽  
Author(s):  
Francis M. Houlihan ◽  
Janet M. Kometani ◽  
Allen G. Timko ◽  
Richard S. Hutton ◽  
Raymond A. Cirelli ◽  
...  
Keyword(s):  
Single Layer ◽  
Alternating Copolymers ◽  
193 Nm

Recent Advances in the Synthesis of Polyfluorenes as Organic Semiconductors

2004 ◽  
Vol 814 ◽  
Author(s):  
David J. Brennan ◽  
Yu Chen ◽  
Shaoguang Feng ◽  
James P. Godschalx ◽  
Gary E. Spilman ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Semiconductor Film ◽  
Melting Temperatures ◽  
Alternating Copolymers ◽  
Polymeric Semiconductor ◽  
Recent Advances ◽  
Thermal Cleavage ◽  
Switching Characteristics ◽  
Initial Results ◽  
Bottom Gate

AbstractNew poly(fluorene-thiophene) alternating copolymers are described in which either the dioctylfluorene or bithiophene units in poly(9,9-dioctylfluorene-alt-bithiophene) (F8T2) are replaced by other fluorene or thiophene-based groups, respectively. Improvements in solubility are realized when the bithiophene unit of F8T2 is replaced by dihexylterthiophene or dihexylpentathiophene units. Melting temperatures are also lowered by 50 – 100°C in these polymers when compared to F8T2. Replacement of the bithiophene unit of F8T2 with a dihexylpentathiophene unit also results in a significant improvement in hysteresis (< 2 V vs. 3.5 – 5 V for F8T2). Initial results are also reported on the thermal cleavage of the C8 side groups of F8T2, which yields an insoluble polymeric semiconductor film that continues to exhibit transistor switching characteristics as part of a bottom gate device.

Synthesis of Cycloolefin−Maleic Anhydride Alternating Copolymers for 193 nm Imaging

1997 ◽  
Vol 30 (21) ◽  
pp. 6517-6524 ◽  
Author(s):  
F. M. Houlihan ◽  
T. I. Wallow ◽  
O. Nalamasu ◽  
E. Reichmanis
Keyword(s):  
Maleic Anhydride ◽  
Alternating Copolymers ◽  
193 Nm

Base additives for use in a single layer 193-nm resist based upon poly(norbornene/maleic anhydride/acrylic acid/ tert -butyl acrylate)

2001 ◽  
Author(s):  
Francis M. Houlihan ◽  
Donna Person ◽  
Omkaram Nalamasu ◽  
Ilya Rushkin ◽  
Ognian N. Dimov ◽  
...  
Keyword(s):  
Maleic Anhydride ◽  
Acrylic Acid ◽  
Butyl Acrylate ◽  
Single Layer ◽  
Tert Butyl ◽  
193 Nm

A New Single-Layer Resist for 193-nm Lithography

1996 ◽  
Vol 35 (Part 2, No. 4B) ◽  
pp. L528-L530 ◽  
Author(s):  
Koji Nozaki ◽  
Keiji Watanabe ◽  
Takahisa Namiki ◽  
Miwa Igarashi ◽  
Yoko Kuramitsu ◽  
...  
Keyword(s):  
Single Layer ◽  
193 Nm

scholarly journals Single layer resists with enhanced etch resistance for 193 nm lithography.

1994 ◽  
Vol 7 (3) ◽  
pp. 507-516 ◽  
Author(s):  
ROBERT D. ALLEN ◽  
GREGORY M. WALLRAFF ◽  
RICHARD A. DIPIETRO ◽  
DONALD C. HOFER ◽  
RODERICK R. KUNZ
Keyword(s):  
Single Layer ◽  
193 Nm

Novel single-layer photoresist containing cycloolefins for 193 nm

1998 ◽  
Author(s):  
Joo Hyeon Park ◽  
Dong-Chul Seo ◽  
Ki-Dae Kim ◽  
Sun-Yi Park ◽  
Seong-Ju Kim ◽  
...  
Keyword(s):  
Single Layer ◽  
193 Nm

scholarly journals A Commercially Viable 193 nm Single Layer Resist Platform.

1997 ◽  
Vol 10 (3) ◽  
pp. 511-520 ◽  
Author(s):  
F.M. Houlihan ◽  
T. Wallow ◽  
A. Timko ◽  
E. Neria ◽  
R. Hutton ◽  
...  
Keyword(s):  
Single Layer ◽  
193 Nm

Modeling influence of structural changes in photoacid generators on 193 nm single layer resist imaging

2000 ◽  
Vol 18 (6) ◽  
pp. 3340 ◽  
Author(s):  
Ebo Croffie ◽  
Lei Yuan ◽  
Mosong Cheng ◽  
Andrew Neureuther ◽  
Frank Houlihan ◽  
...  
Keyword(s):  
Structural Changes ◽  
Single Layer ◽  
Photoacid Generators ◽  
193 Nm
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