Rapid thermal process-induced recombination centers in ion implanted silicon

1990 ◽  
Vol 50 (4) ◽  
pp. 405-410 ◽  
Author(s):  
W. Eichhammer ◽  
M. Hage-Ali ◽  
R. Stuck ◽  
P. Siffert
Keyword(s):  
Thermal Process ◽  
Rapid Thermal Process ◽  
Recombination Centers ◽  
Ion Implanted

Investigation of rapid thermal process-induced defects in ion-implanted Czochralski silicon

1991 ◽  
Author(s):  
Charles B. Yarling ◽  
Sookap Hahn ◽  
David T. Hodul ◽  
Hisaaki Suga ◽  
Walter L. Smith
Keyword(s):  
Thermal Process ◽  
Rapid Thermal Process ◽  
Czochralski Silicon ◽  
Induced Defects ◽  
Ion Implanted

On the origin of rapid thermal process induced recombination centers in silicon

1989 ◽  
Vol 66 (8) ◽  
pp. 3857-3865 ◽  
Author(s):  
W. Eichhammer ◽  
Vu‐Thuong‐Quat ◽  
P. Siffert
Keyword(s):  
Thermal Process ◽  
Rapid Thermal Process ◽  
Recombination Centers

Nitrogen-doped Czochralski silicon treated in rapid thermal process

2006 ◽  
Vol 134 (2-3) ◽  
pp. 193-201 ◽  
Author(s):  
Deren Yang ◽  
Ming Li ◽  
Can Cui ◽  
Xiangyang Ma ◽  
Duanlin Que
Keyword(s):  
Thermal Process ◽  
Rapid Thermal Process ◽  
Nitrogen Doped ◽  
Czochralski Silicon

Photoluminescence of Pulsed Ruby Laser Annealed Crystalline and Ion Implanted GaAs

1981 ◽  
Vol 4 ◽  
Author(s):  
Douglas H. Lowndes ◽  
Bernard J. Feldman
Keyword(s):  
Radiative Recombination ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Recombination Centers ◽  
Pl Intensity ◽  
P Type ◽  
Ion Implanted

ABSTRACTIn an effort to understand the origin of defects earlier found to be present in p–n junctions formed by pulsed laser annealing (PLA) of ion implanted (II) semiconducting GaAs, photoluminescence (PL) studies have been carried out. PL spectra have been obtained at 4K, 77K and 300K, for both n–and p–type GaAs, for laser energy densities 0 ≤ El ≤ 0.6 J/cm2. It is found that PLA of crystalline (c−) GaAs alters the PL spectrum and decreases the PL intensity, corresponding to an increase in density of non-radiative recombination centers with increasing El. The variation of PL intensity with El is found to be different for n– and p–type material. No PL is observed from high dose (1 or 5×1015 ions/cm2 ) Sior Zn-implanted GaAs, either before or after laser annealing. The results suggest that the ion implantation step is primarily responsible for formation of defects associated with the loss of radiative recombination, with pulsed annealing contributing only secondarily.

Non-Prefabricated Nanocrystal Mesoporous TiO2-Based Photoanodes Tuned by A Layer-by-Layer and Rapid Thermal Process

2009 ◽  
Vol 2 (1) ◽  
pp. 265-269 ◽  
Author(s):  
Junchao Tao ◽  
Yan Sun ◽  
Meiying Ge ◽  
Xin Chen ◽  
Ning Dai
Keyword(s):  
Thermal Process ◽  
Mesoporous Tio2 ◽  
Layer By Layer ◽  
Rapid Thermal Process

Intermediate band materials obtained by rapid thermal process of Co-implanted silicon

2017 ◽  
Vol 209 ◽  
pp. 522-524 ◽  
Author(s):  
Jiren Yuan ◽  
Haibin Huang ◽  
Xinhua Deng ◽  
Mingang Gong ◽  
Cuicui Liu ◽  
...  
Keyword(s):  
Thermal Process ◽  
Rapid Thermal Process ◽  
Intermediate Band

Induced changes on visible emission and conductive type in N-doped ZnO films by rapid thermal process

2010 ◽  
Vol 28 (5) ◽  
pp. 1115-1121 ◽  
Author(s):  
Z. P. Shan ◽  
S. L. Gu ◽  
K. P. Wu ◽  
S. M. Zhu ◽  
K. Tang ◽  
...  
Keyword(s):  
Thermal Process ◽  
Visible Emission ◽  
Zno Films ◽  
Rapid Thermal Process ◽  
Doped Zno ◽  
Induced Changes

Growth Monitoring of Cu-Poor Prepared CuInS2 Thin Films

2001 ◽  
Vol 668 ◽  
Author(s):  
Ilka V. Luck ◽  
Jacobo Alvarez-Garcia ◽  
Lorenzo Calvo-Barrio ◽  
Axel Werner ◽  
Alejandro Perez-Rodriguez ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Thermal Process ◽  
Elemental Sulfur ◽  
Film Formation ◽  
Sample Surface ◽  
Growth Monitoring ◽  
Rapid Thermal Process ◽  
Intermediate Phases ◽  
Cuins2 Thin Films ◽  
Thin Film Formation

ABSTRACTThe CuInS2 thin film formation from a Cu/In precursor stack in the presence of elemental sulfur using a rapid thermal process under Cu-poor conditions has been studied. The process has been aborted at appropriate stages and the corresponding samples were investigated by XRD, Raman spectroscopy and SEM. The sulfurisation starts from elemental Cu and CuIn2. Elemental In and the binary phases Cu11In9 and Cu7In3 appear as intermediate phases. At the end of the sulfurisation the sample contains the ternary phases CuInS2 and CuIn5S8. CuS and β-In2S3 are detected by Raman spectroscopy at the sample surface and at distinct stages of the sulfurisation only. A difference in CuInS2 crystal quality is observed between the surface and the bottom of the samples.

Enhanced-Performance Germanium Nanowire Tunneling Field-Effect Transistors Using Flash-Assisted Rapid Thermal Process

2010 ◽  
Vol 31 (12) ◽  
pp. 1359-1361 ◽  
Author(s):  
Junghyo Nah ◽  
En-Shao Liu ◽  
Kamran M. Varahramyan ◽  
Dave Dillen ◽  
Steve McCoy ◽  
...  
Keyword(s):  
Field Effect ◽  
Thermal Process ◽  
Field Effect Transistors ◽  
Rapid Thermal Process ◽  
Tunneling Field Effect Transistors
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