Three-dimensional profile extraction from CD-SEM image and top/bottom CD measurement by line-edge roughness analysis

2013 ◽  
Author(s):  
Atsuko Yamaguchi ◽  
Takeyoshi Ohashi ◽  
Takahiro Kawasaki ◽  
Osamu Inoue ◽  
Hiroki Kawada
Keyword(s):  
Three Dimensional ◽  
Line Edge Roughness ◽  
Sem Image ◽  
Edge Roughness ◽  
Roughness Analysis

Resist Materials Providing Small Line-Edge Roughness

1999 ◽  
Vol 584 ◽  
Author(s):  
Hideo Namatsu ◽  
Toru Yamaguchi ◽  
Kenji Kurihara
Keyword(s):  
Polymer Matrix ◽  
Three Dimensional ◽  
Line Edge Roughness ◽  
Hydrogen Silsesquioxane ◽  
Surrounding Matrix ◽  
Polymer Aggregates ◽  
Edge Roughness ◽  
Practical Tool ◽  
Cross Linker ◽  
Produce Line

AbstractOur research focuses on the line-edge roughness of resist patterns and how to reduce it in order to establish nanolithography as a practical tool. Commercially available e-beam resists exhibit a line-edge roughness of 3 nm (σ) or more. It is caused mainly by polymer aggregates in the resist. During development, they are extracted through dissolution of the surrounding polymer matrix. That is, the aggregates themselves dissolve more slowly than the surrounding matrix; and those that remain embedded in the resist produce line-edge roughness. To reduce the roughness, the effect of the aggregates must be suppressed. One way of doing this is to use a resist containing small aggregates. A good candidate is hydrogen silsesquioxane, which has a three-dimensional framework. Another way is to use a resist in which the aggregates are linked together, which makes them difficult to extract during development. A good example is an acrylate-type resist with a cross-linker mixed in.

scholarly journals True 3D Nanometrology: 3D-Probing with a Cantilever-Based Sensor

Sensors ◽  
2021 ◽  
Vol 22 (1) ◽  
pp. 314
Author(s):  
Jan Thiesler ◽  
Thomas Ahbe ◽  
Rainer Tutsch ◽  
Gaoliang Dai
Keyword(s):  
Three Dimensional ◽  
Critical Dimension ◽  
Selectivity Ratio ◽  
Line Edge Roughness ◽  
Long Term Stability ◽  
Atomic Force ◽  
Edge Roughness ◽  
Spatial Dimensions ◽  
Optical Lever

State of the art three-dimensional atomic force microscopes (3D-AFM) cannot measure three spatial dimensions separately from each other. A 3D-AFM-head with true 3D-probing capabilities is presented in this paper. It detects the so-called 3D-Nanoprobes CD-tip displacement with a differential interferometer and an optical lever. The 3D-Nanoprobe was specifically developed for tactile 3D-probing and is applied for critical dimension (CD) measurements. A calibrated 3D-Nanoprobe shows a selectivity ratio of 50:1 on average for each of the spatial directions x, y, and z. Typical stiffness values are kx = 1.722 ± 0.083 N/m, ky = 1.511 ± 0.034 N/m, and kz = 1.64 ± 0.16 N/m resulting in a quasi-isotropic ratio of the stiffness of 1.1:0.9:1.0 in x:y:z, respectively. The probing repeatability of the developed true 3D-AFM shows a standard deviation of 0.18 nm, 0.31 nm, and 0.83 nm for x, y, and z, respectively. Two CD-line samples type IVPS100-PTB, which were perpendicularly mounted to each other, were used to test the performance of the developed true 3D-AFM: repeatability, long-term stability, pitch, and line edge roughness and linewidth roughness (LER/LWR), showing promising results.

scholarly journals A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs

Materials ◽  
2019 ◽  
Vol 12 (15) ◽  
pp. 2391 ◽  
Author(s):  
Natalia Seoane ◽  
Daniel Nagy ◽  
Guillermo Indalecio ◽  
Gabriel Espiñeira ◽  
Karol Kalna ◽  
...  
Keyword(s):  
Field Effect Transistor ◽  
Three Dimensional ◽  
Gate Length ◽  
Line Edge Roughness ◽  
Voltage Standard ◽  
A Value ◽  
Edge Roughness ◽  
Effect Transistor ◽  
Study Performance ◽  
The Ideal

An in-house-built three-dimensional multi-method semi-classical/classical toolbox has been developed to characterise the performance, scalability, and variability of state-of-the-art semiconductor devices. To demonstrate capabilities of the toolbox, a 10 nm gate length Si gate-all-around field-effect transistor is selected as a benchmark device. The device exhibits an off-current (I OFF) of 0 . 03 μA/μm, and an on-current (I ON) of 1770 μA/μm, with the I ON / I OFF ratio 6 . 63 × 10 4, a value 27 % larger than that of a 10 . 7 nm gate length Si FinFET. The device SS is 71 mV/dec, no far from the ideal limit of 60 mV/dec. The threshold voltage standard deviation due to statistical combination of four sources of variability (line- and gate-edge roughness, metal grain granularity, and random dopants) is 55 . 5 mV, a value noticeably larger than that of the equivalent FinFET (30 mV). Finally, using a fluctuation sensitivity map, we establish which regions of the device are the most sensitive to the line-edge roughness and the metal grain granularity variability effects. The on-current of the device is strongly affected by any line-edge roughness taking place near the source-gate junction or by metal grains localised between the middle of the gate and the proximity of the gate-source junction.

Photoresist line-edge roughness analysis using scaling concepts

2003 ◽  
Author(s):  
Vasilios Constantoudis ◽  
George P. Patsis ◽  
Evangelos Gogolides
Keyword(s):  
Line Edge Roughness ◽  
Edge Roughness ◽  
Roughness Analysis

Modeling Atomistic Ion-Implantation and Diffusion for Simulating Intrinsic Fluctuation in MOSFETs arising from Line-Edge Roughness

2004 ◽  
Vol 810 ◽  
Author(s):  
Masami Hane ◽  
Takeo Ikezawa ◽  
Tatsuya Ezaki
Keyword(s):  
Ion Implantation ◽  
Three Dimensional ◽  
Line Edge Roughness ◽  
Statistical Nature ◽  
Simulation Tools ◽  
Edge Roughness ◽  
Intrinsic Fluctuations ◽  
Intrinsic Fluctuation ◽  
And Diffusion ◽  
Random Discrete Dopants

ABSTRACTWe have developed new simulation tools to enable more precise design of sub-100nm MOSFETs. Intrinsic fluctuations in the characteristics of these devices occur as part of their statistical nature. Our three-dimensional atomistic approach to both process and device simulations enabled us to examine the coupling effects of the most significant sources of fluctuation, i.e. line-edge-roughness and random discrete dopants, considering practical fabrication processes.

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