Modeling Atomistic Ion-Implantation and Diffusion for Simulating Intrinsic Fluctuation in MOSFETs arising from Line-Edge Roughness

2004 ◽  
Vol 810 ◽  
Author(s):  
Masami Hane ◽  
Takeo Ikezawa ◽  
Tatsuya Ezaki
Keyword(s):  
Ion Implantation ◽  
Three Dimensional ◽  
Line Edge Roughness ◽  
Statistical Nature ◽  
Simulation Tools ◽  
Edge Roughness ◽  
Intrinsic Fluctuations ◽  
Intrinsic Fluctuation ◽  
And Diffusion ◽  
Random Discrete Dopants

ABSTRACTWe have developed new simulation tools to enable more precise design of sub-100nm MOSFETs. Intrinsic fluctuations in the characteristics of these devices occur as part of their statistical nature. Our three-dimensional atomistic approach to both process and device simulations enabled us to examine the coupling effects of the most significant sources of fluctuation, i.e. line-edge-roughness and random discrete dopants, considering practical fabrication processes.

Resist Materials Providing Small Line-Edge Roughness

1999 ◽  
Vol 584 ◽  
Author(s):  
Hideo Namatsu ◽  
Toru Yamaguchi ◽  
Kenji Kurihara
Keyword(s):  
Polymer Matrix ◽  
Three Dimensional ◽  
Line Edge Roughness ◽  
Hydrogen Silsesquioxane ◽  
Surrounding Matrix ◽  
Polymer Aggregates ◽  
Edge Roughness ◽  
Practical Tool ◽  
Cross Linker ◽  
Produce Line

AbstractOur research focuses on the line-edge roughness of resist patterns and how to reduce it in order to establish nanolithography as a practical tool. Commercially available e-beam resists exhibit a line-edge roughness of 3 nm (σ) or more. It is caused mainly by polymer aggregates in the resist. During development, they are extracted through dissolution of the surrounding polymer matrix. That is, the aggregates themselves dissolve more slowly than the surrounding matrix; and those that remain embedded in the resist produce line-edge roughness. To reduce the roughness, the effect of the aggregates must be suppressed. One way of doing this is to use a resist containing small aggregates. A good candidate is hydrogen silsesquioxane, which has a three-dimensional framework. Another way is to use a resist in which the aggregates are linked together, which makes them difficult to extract during development. A good example is an acrylate-type resist with a cross-linker mixed in.

scholarly journals True 3D Nanometrology: 3D-Probing with a Cantilever-Based Sensor

Sensors ◽  
2021 ◽  
Vol 22 (1) ◽  
pp. 314
Author(s):  
Jan Thiesler ◽  
Thomas Ahbe ◽  
Rainer Tutsch ◽  
Gaoliang Dai
Keyword(s):  
Three Dimensional ◽  
Critical Dimension ◽  
Selectivity Ratio ◽  
Line Edge Roughness ◽  
Long Term Stability ◽  
Atomic Force ◽  
Edge Roughness ◽  
Spatial Dimensions ◽  
Optical Lever

State of the art three-dimensional atomic force microscopes (3D-AFM) cannot measure three spatial dimensions separately from each other. A 3D-AFM-head with true 3D-probing capabilities is presented in this paper. It detects the so-called 3D-Nanoprobes CD-tip displacement with a differential interferometer and an optical lever. The 3D-Nanoprobe was specifically developed for tactile 3D-probing and is applied for critical dimension (CD) measurements. A calibrated 3D-Nanoprobe shows a selectivity ratio of 50:1 on average for each of the spatial directions x, y, and z. Typical stiffness values are kx = 1.722 ± 0.083 N/m, ky = 1.511 ± 0.034 N/m, and kz = 1.64 ± 0.16 N/m resulting in a quasi-isotropic ratio of the stiffness of 1.1:0.9:1.0 in x:y:z, respectively. The probing repeatability of the developed true 3D-AFM shows a standard deviation of 0.18 nm, 0.31 nm, and 0.83 nm for x, y, and z, respectively. Two CD-line samples type IVPS100-PTB, which were perpendicularly mounted to each other, were used to test the performance of the developed true 3D-AFM: repeatability, long-term stability, pitch, and line edge roughness and linewidth roughness (LER/LWR), showing promising results.

scholarly journals A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs

Materials ◽  
2019 ◽  
Vol 12 (15) ◽  
pp. 2391 ◽  
Author(s):  
Natalia Seoane ◽  
Daniel Nagy ◽  
Guillermo Indalecio ◽  
Gabriel Espiñeira ◽  
Karol Kalna ◽  
...  
Keyword(s):  
Field Effect Transistor ◽  
Three Dimensional ◽  
Gate Length ◽  
Line Edge Roughness ◽  
Voltage Standard ◽  
A Value ◽  
Edge Roughness ◽  
Effect Transistor ◽  
Study Performance ◽  
The Ideal

An in-house-built three-dimensional multi-method semi-classical/classical toolbox has been developed to characterise the performance, scalability, and variability of state-of-the-art semiconductor devices. To demonstrate capabilities of the toolbox, a 10 nm gate length Si gate-all-around field-effect transistor is selected as a benchmark device. The device exhibits an off-current (I OFF) of 0 . 03 μA/μm, and an on-current (I ON) of 1770 μA/μm, with the I ON / I OFF ratio 6 . 63 × 10 4, a value 27 % larger than that of a 10 . 7 nm gate length Si FinFET. The device SS is 71 mV/dec, no far from the ideal limit of 60 mV/dec. The threshold voltage standard deviation due to statistical combination of four sources of variability (line- and gate-edge roughness, metal grain granularity, and random dopants) is 55 . 5 mV, a value noticeably larger than that of the equivalent FinFET (30 mV). Finally, using a fluctuation sensitivity map, we establish which regions of the device are the most sensitive to the line-edge roughness and the metal grain granularity variability effects. The on-current of the device is strongly affected by any line-edge roughness taking place near the source-gate junction or by metal grains localised between the middle of the gate and the proximity of the gate-source junction.

Three-dimensional profile extraction from CD-SEM image and top/bottom CD measurement by line-edge roughness analysis

2013 ◽  
Author(s):  
Atsuko Yamaguchi ◽  
Takeyoshi Ohashi ◽  
Takahiro Kawasaki ◽  
Osamu Inoue ◽  
Hiroki Kawada
Keyword(s):  
Three Dimensional ◽  
Line Edge Roughness ◽  
Sem Image ◽  
Edge Roughness ◽  
Roughness Analysis

Three-dimensional line edge roughness in pre- and post-dry etch line and space patterns of block copolymer lithography

2020 ◽  
Vol 22 (2) ◽  
pp. 478-488
Author(s):  
Shubham Pinge ◽  
Yufeng Qiu ◽  
Victor Monreal ◽  
Durairaj Baskaran ◽  
Abhaiguru Ravirajan ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Block Copolymer ◽  
Large Scale ◽  
Three Dimensional ◽  
Coarse Grained ◽  
Line Edge Roughness ◽  
Edge Roughness ◽  
Dry Etch ◽  
Block Copolymer Lithography ◽  
Symmetric Block

In this work, we employ large-scale coarse-grained molecular dynamics (CGMD) simulations to study the three-dimensional line edge roughness associated with line and space patterns of chemo-epitaxially directed symmetric block copolymers.

Three-Dimensional Measurement of Line Edge Roughness in Copper Wires Using Electron Tomography

2009 ◽  
Vol 15 (3) ◽  
pp. 244-250 ◽  
Author(s):  
Peter Ercius ◽  
Lynne M. Gignac ◽  
C.-K. Hu ◽  
David A. Muller
Keyword(s):  
Integrated Circuits ◽  
Cross Sections ◽  
Electron Tomography ◽  
Three Dimensional ◽  
Cross Sectional Area ◽  
Original Structure ◽  
Sectional Area ◽  
Line Edge Roughness ◽  
Cross Sectional ◽  
Edge Roughness

AbstractElectrical interconnects in integrated circuits have shrunk to sizes in the range of 20–100 nm. Accurate measurements of the dimensions of these nanowires are essential for identifying the dominant electron scattering mechanisms affecting wire resistivity as they continue to shrink. We report a systematic study of the effect of line edge roughness on the apparent cross-sectional area of 90 nm Cu wires with a TaN/Ta barrier measured by conventional two-dimensional projection imaging and three-dimensional electron tomography. Discrepancies in area measurements due to the overlap of defects along the wire's length lead to a 5% difference in the resistivities predicted by the two methods. Tomography of thick cross sections is shown to give a more accurate representation of the original structure and allows more efficient sampling of the wire's cross-sectional area. The effect of roughness on measurements from projection images is minimized for cross-section thicknesses less than 50 nm, or approximately half the spatial frequency of the roughness variations along the length of the investigated wires.

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