Slurry chemistry effects during chemical-mechanical polishing of silicon oxide films

1993 ◽  
Author(s):  
Rahul Jairath ◽  
Hubert M. Bath ◽  
Suzanne Davis ◽  
M. Desai ◽  
Kathleen A. Perry ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Mechanical Polishing

Novel Polymeric Surfactants for Improving Chemical Mechanical Polishing Performance of Silicon Oxide

2001 ◽  
Vol 4 (5) ◽  
pp. G42 ◽  
Author(s):  
Wei-Tsu Tseng ◽  
Ping-Lin Kuo ◽  
Chin-Lung Liao ◽  
Rick Lu ◽  
Jen-Fin Lin
Keyword(s):  
Chemical Mechanical Polishing ◽  
Silicon Oxide ◽  
Mechanical Polishing ◽  
Polymeric Surfactants

The Hot Carrier Degradation and Device Characteristics with Variation of Pre-Metal Dielectric Materials

1998 ◽  
Vol 544 ◽  
Author(s):  
Y. J. Seo ◽  
W. S. Choi ◽  
S. Y. Kim ◽  
C. I. Kim ◽  
E. G. Chang ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Silicon Oxide ◽  
Dielectric Materials ◽  
Mechanical Polishing ◽  
Hot Carrier ◽  
Carrier Effect ◽  
Hot Carrier Effect ◽  
Hot Carrier Degradation

AbstractIt is very important to select superior interlayer Pre Metal Dielectric (PMD) materials which can act as a penetration barrier to various impurities created by the Chemical Mechanical Polishing (CMP) processes. In this paper, hot carrier degradation and device characteristics were investigated with material variation of PMD-1 layers, which were split by LP-TEOS, SR-oxide, PE-oxynitride, PE-nitride and PE-TEOS films. It was observed that the PE-oxynitride and PEnitride using plasma was greatly deteriorated in hot carrier effect in comparison with silicon oxide. Consequently, it is clearly shown that silicon oxide turned out to be a better PMD-1 material than both PE-oxynitride and PE-nitride. From the results, it is suggested that LP-TEOS film is the best PMD-1 material among the silicon oxide samples.

Chemical mechanical polishing of thermal oxide films using silica particles coated with ceria

2002 ◽  
Vol 17 (10) ◽  
pp. 2744-2749 ◽  
Author(s):  
Seung-Ho Lee ◽  
Zhenyu Lu ◽  
S. V. Babu ◽  
Egon Matijević
Keyword(s):  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Oxide Films ◽  
Silica Particles ◽  
Silicon Wafers ◽  
Mechanical Polishing ◽  
Thermal Oxide ◽  
Pure Ceria ◽  
Polish Rate

Thermal oxide covered silicon wafers were polished with slurries containing either nano-sized ceria (CeO2) or newly prepared uniform colloidal silica particles coated with ceria. The polish rate of the latter was significantly higher than that of pure ceria. The experiments were carried out using different concentrations of the abrasives at pH 4 and 10. Little effect on the polishing rates was noted when the conditions of the slurries were varied, which was explained by the compensation of two opposite polishing mechanisms.

A Planarization Model in Chemical Mechanical Polishing of Silicon Oxide using High Selective CeO2 Slurry

2001 ◽  
Vol 671 ◽  
Author(s):  
Jong Won Lee ◽  
Bo Un Yoon ◽  
Sangrok Hah ◽  
Joo Tae Moon
Keyword(s):  
High Pressure ◽  
Chemical Mechanical Polishing ◽  
Silicon Oxide ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
High Area ◽  
Trench Area

ABSTRACTThis paper attempts to establish planarization model in chemical mechanical polishing of silicon oxide using high selective ceria slurry. Though removal rate of the high area is increased due to a high pressure focused on the area with abrasive and pad, the removal rate of the same area is not increased but decreased even in the very beginning of polishing with ceria slurry. It also observed that only the elevated area is polished and dishing is not occurred during the polishing in high selective ceria CMP. In this work, it is proposed that ceria abrasives are filled in the low trench area and then support the pad as well as high area during the CMP, which results in planarization without dishing.

Chemical Mechanical Polishing for Planarization in Manufacturing Environment

1994 ◽  
Vol 337 ◽  
Author(s):  
Mukesh Desai ◽  
Rahul Jairath ◽  
Matt Stell ◽  
Robert Toiles
Keyword(s):  
Chemical Mechanical Polishing ◽  
Process Integration ◽  
Removal Rate ◽  
Oxide Films ◽  
Silicon Wafers ◽  
Mechanical Polishing ◽  
Manufacturing Environment ◽  
The Past ◽  
Technology Generation ◽  
Cost Of Ownership

ABSTRACTGlobal Planarization requirements of the deep sub-micron technology generation requires use of CMP as preferred planarization technique. In the past, CMP has been used extensively in the polishing of silicon wafers. However , there has been some reluctance to utilize this technology in the planarization of oxide films during IC manufacture. This has been driven primarily by issues regarding manufacturability , and therefore cost of ownership of CMP processes. Here the key process integration issues in CMP planarization of oxide films are outlined.An effect of consumable set is shown to be critical in achieving repeatable CMP performance via removal rate & non-uniformity. Various defects induced as a result of CMP are explained. Cost of ownership model is used to demonstrate the importance of minimizing such defects.

Interaction Between Ceria and Hydroxylamine

2003 ◽  
Vol 767 ◽  
Author(s):  
Subramanian Tamilmani ◽  
Jilei Shan ◽  
Wayne Huang ◽  
Srini Raghavan ◽  
Robert Small ◽  
...  
Keyword(s):  
Kinetic Study ◽  
Chemical Mechanical Polishing ◽  
Redox Reactions ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Oxide Surfaces ◽  
Chemical Reagents ◽  
Ph Values ◽  
Kinetics Of Dissolution ◽  
Kinetics Of

AbstractCeria containing slurries are increasingly used in the chemical mechanical polishing of CVD silicon oxide films to obtain STI structures. Unlike silica or alumina, ceria has redox characteristics. Because of this characteristic, removal of ceria particles from planarized surfaces may be possible using chemical reagents that can participate in redox reactions. One such reagent is hydroxylamine, which is already being used in copper CMP. The objective of the work reported in this paper was to characterize the reaction between ceria and hydroxylamine, especially with respect to dissolution of ceria particles. A kinetic study of the dissolution of ceria in hydroxylamine solutions maintained at various pH values has been performed. The extent and kinetics of dissolution of ceria has been determined by ICPMS. Removal of ceria particles from oxide surfaces using hydroxylamine-based chemistries has been investigated.

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