Chemical mechanical polishing of thermal oxide films using silica particles coated with ceria

2002 ◽  
Vol 17 (10) ◽  
pp. 2744-2749 ◽  
Author(s):  
Seung-Ho Lee ◽  
Zhenyu Lu ◽  
S. V. Babu ◽  
Egon Matijević
Keyword(s):  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Oxide Films ◽  
Silica Particles ◽  
Silicon Wafers ◽  
Mechanical Polishing ◽  
Thermal Oxide ◽  
Pure Ceria ◽  
Polish Rate

Thermal oxide covered silicon wafers were polished with slurries containing either nano-sized ceria (CeO2) or newly prepared uniform colloidal silica particles coated with ceria. The polish rate of the latter was significantly higher than that of pure ceria. The experiments were carried out using different concentrations of the abrasives at pH 4 and 10. Little effect on the polishing rates was noted when the conditions of the slurries were varied, which was explained by the compensation of two opposite polishing mechanisms.

Chemical Mechanical Polishing of Ge Using Colloidal Silica Particles and H2O2

2011 ◽  
Vol 14 (7) ◽  
pp. H254 ◽  
Author(s):  
Shivaji Peddeti ◽  
Patrick Ong ◽  
L. H. A. Leunissen ◽  
S. V. Babu
Keyword(s):  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Silica Particles ◽  
Mechanical Polishing

Effects of mixed ultrafine colloidal silica particles on chemical mechanical polishing of sapphire

2018 ◽  
Vol 57 (7S2) ◽  
pp. 07MD03 ◽  
Author(s):  
Natthaphon Bun-Athuek ◽  
Hiroko Takazaki ◽  
Yutaka Yoshimoto ◽  
Panart Khajornrungruang ◽  
Takuo Yasunaga ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Silica Particles ◽  
Mechanical Polishing

Chemical Mechanical Polishing for Planarization in Manufacturing Environment

1994 ◽  
Vol 337 ◽  
Author(s):  
Mukesh Desai ◽  
Rahul Jairath ◽  
Matt Stell ◽  
Robert Toiles
Keyword(s):  
Chemical Mechanical Polishing ◽  
Process Integration ◽  
Removal Rate ◽  
Oxide Films ◽  
Silicon Wafers ◽  
Mechanical Polishing ◽  
Manufacturing Environment ◽  
The Past ◽  
Technology Generation ◽  
Cost Of Ownership

ABSTRACTGlobal Planarization requirements of the deep sub-micron technology generation requires use of CMP as preferred planarization technique. In the past, CMP has been used extensively in the polishing of silicon wafers. However , there has been some reluctance to utilize this technology in the planarization of oxide films during IC manufacture. This has been driven primarily by issues regarding manufacturability , and therefore cost of ownership of CMP processes. Here the key process integration issues in CMP planarization of oxide films are outlined.An effect of consumable set is shown to be critical in achieving repeatable CMP performance via removal rate & non-uniformity. Various defects induced as a result of CMP are explained. Cost of ownership model is used to demonstrate the importance of minimizing such defects.

Evaluation of Monodispersed Silica Particles and Ceria Coated Silica Particles for Chemical Mechanical Polishing

2002 ◽  
Vol 732 ◽  
Author(s):  
Zhenyu Lu ◽  
Seung-Ho Lee ◽  
Egon Matijević ◽  
S. V. Babu
Keyword(s):  
Chemical Mechanical Polishing ◽  
Removal Rate ◽  
Oxide Films ◽  
Total Surface Area ◽  
Silica Particles ◽  
Solid Content ◽  
Mechanical Polishing ◽  
Abrasive Particles ◽  
Cu Films ◽  
Spherical Silica

AbstractThe properties of abrasive particles play a key role in chemical mechanical polishing (CMP). This study used well-defined dispersions of uniform particles, including spherical silica of varying diameters to polish Cu films and silica cores coated with nanosized ceria particles to polish oxide films. It was shown that the total surface area of the silica abrasives in the slurry controlled Cu material removal rate. However, pH, solid content, and particle size of ceria coated silica abrasives did not have a strong correlation to the removal rate of oxide films.

The Surface Damage in SiO2 Caused by Chemical Mechanical Polishing on Ic-60 Pads

1994 ◽  
Vol 337 ◽  
Author(s):  
Shyam Murarka ◽  
Sen-Hou Ko ◽  
Minoru Tomozawa ◽  
Pei-Jun Ding ◽  
William A. Lanford
Keyword(s):  
Electrical Properties ◽  
Nuclear Reaction ◽  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Surface Damage ◽  
Mechanical Polishing ◽  
Interlayer Dielectric ◽  
Silicon Devices ◽  
Thermal Oxide ◽  
Silica Slurry

ABSTRACTChemical Mechanical polishing (CMP) is a useful technique for achieving global planarization in the ICs. The CMP of oxide has been used and studied for decades. Only recently the technique has been employed for planarizing the interlayer dielectric (ILD) on the silicon devices circuits. The effect of such polishing on the performance of the ILD has been the concern. This paper examines the attempts on defining the damage caused by CMP and its effect on the electrical properties after polished SiO2 wafers. In this investigation the PECVD and thermal oxide films were polished in the colloidal silica slurry on IC 60 pad. The polished oxide were then studied using I-V and nuclear reaction technique. The results show a surface damage which extends to about 800 Å in the polished oxide. The changes occurring in the concentration of hydrogenous species at the surface of SiO2 as determined by nuclear reaction technique will also be presented. It is shown that due to CMP as-deposited CVD SiO2 films loose water from surface regions whereas well annealed or dry oxides gain water at the surface. The results will be discussed and mechanisms will be presented to explain electrical results.

Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)

2008 ◽  
Vol 600-603 ◽  
pp. 831-834 ◽  
Author(s):  
Joon Ho An ◽  
Gi Sub Lee ◽  
Won Jae Lee ◽  
Byoung Chul Shin ◽  
Jung Doo Seo ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Diamond Particles ◽  
Average Grain Size ◽  
Silica Slurry ◽  
Sic Wafer

2inch 6H-SiC (0001) wafers were sliced from the ingot grown by a conventional physical vapor transport (PVT) method using an abrasive multi-wire saw. While sliced SiC wafers lapped by a slurry with 1~9㎛ diamond particles had a mean height (Ra) value of 40nm, wafers after the final mechanical polishing using the slurry of 0.1㎛ diamond particles exhibited Ra of 4Å. In this study, we focused on investigation into the effect of the slurry type of chemical mechanical polishing (CMP) on the material removal rate of SiC materials and the change in surface roughness by adding abrasives and oxidizer to conventional KOH-based colloidal silica slurry. The nano-sized diamond slurry (average grain size of 25nm) added in KOH-based colloidal silica slurry resulted in a material removal rate (MRR) of 0.07mg/hr and the Ra of 1.811Å. The addition of oxidizer (NaOCl) in the nano-size diamond and KOH based colloidal silica slurry was proven to improve the CMP characteristics for SiC wafer, having a MRR of 0.3mg/hr and Ra of 1.087Å.

Slurry Residue Removal in Post Chemical Mechanical Polishing

1999 ◽  
Author(s):  
Ahmed A. Busnaina ◽  
Naim Moumen
Keyword(s):  
Chemical Mechanical Polishing ◽  
Silicon Wafers ◽  
Mechanical Polishing ◽  
Operating Conditions ◽  
Cleaning Process ◽  
Megasonic Cleaning ◽  
Residue Removal ◽  
Particulate Contamination

Abstract The megasonic cleaning process proved to be an essential process in cleaning silicon wafers after processes such as pre-oxidation, pre-CVD, pre-EPI, post-ASH and lately post-CMP. Current post-CMP cleans are contact cleaning techniques. These contact techniques have a low throughput and may cause wafer scratching. In addition, in contact cleaning, brush shedding which occurs under many operating conditions causes additional particulate contamination. There is a need for an effective post-CMP cleaning process. Megasonic cleaning provides the best alternative or compliment to brush clean.

Chemical Mechanical Polishing of Gallium Nitride with Colloidal Silica

2011 ◽  
Vol 158 (12) ◽  
pp. H1206 ◽  
Author(s):  
Hideo Aida ◽  
Hidetoshi Takeda ◽  
Koji Koyama ◽  
Haruji Katakura ◽  
Kazuhiko Sunakawa ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Mechanical Polishing

Study on Chemical Mechanical Polishing Technology of Copper

2008 ◽  
Vol 373-374 ◽  
pp. 820-823
Author(s):  
Sheng Li Wang ◽  
Y.J. Yuan ◽  
Yu Ling Liu ◽  
X.H. Niu
Keyword(s):  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Alkali Concentration ◽  
Copper Films ◽  
Optimum Conditions ◽  
Slurry Flow Rate ◽  
Polishing Pressure ◽  
Oxidizer Concentration

Chemical mechanical polishing (CMP) of copper films in alkaline slurries was investigated. In the copper CMP, the slurry was made by adding colloidal silica abrasive to de-ionized water.The organic alkali was added to adjust the pH, H2O2 was used as an oxidizer.The effects of varying polishing temperature, polishing pressure, slurry flow rate, organic alkali concentration and oxidizer concentration on removal rate were investigated in order to determine the optimum conditions for those parameters. It is shown the chemical composition of the slurry was 2%~3% oxidizer concentration, 3% organic alkali concentration and proper amount surfactant is reasonable. The solid concentration of the polishing slurry was fixed at 20% by weight. The removal rate of copper could reach 700nm/min and the surface roughness after CMP was 0.49nm.

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