Novel Polymeric Surfactants for Improving Chemical Mechanical Polishing Performance of Silicon Oxide

2001 ◽  
Vol 4 (5) ◽  
pp. G42 ◽  
Author(s):  
Wei-Tsu Tseng ◽  
Ping-Lin Kuo ◽  
Chin-Lung Liao ◽  
Rick Lu ◽  
Jen-Fin Lin
Keyword(s):  
Chemical Mechanical Polishing ◽  
Silicon Oxide ◽  
Mechanical Polishing ◽  
Polymeric Surfactants

Slurry chemistry effects during chemical-mechanical polishing of silicon oxide films

1993 ◽  
Author(s):  
Rahul Jairath ◽  
Hubert M. Bath ◽  
Suzanne Davis ◽  
M. Desai ◽  
Kathleen A. Perry ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Mechanical Polishing

The Hot Carrier Degradation and Device Characteristics with Variation of Pre-Metal Dielectric Materials

1998 ◽  
Vol 544 ◽  
Author(s):  
Y. J. Seo ◽  
W. S. Choi ◽  
S. Y. Kim ◽  
C. I. Kim ◽  
E. G. Chang ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Silicon Oxide ◽  
Dielectric Materials ◽  
Mechanical Polishing ◽  
Hot Carrier ◽  
Carrier Effect ◽  
Hot Carrier Effect ◽  
Hot Carrier Degradation

AbstractIt is very important to select superior interlayer Pre Metal Dielectric (PMD) materials which can act as a penetration barrier to various impurities created by the Chemical Mechanical Polishing (CMP) processes. In this paper, hot carrier degradation and device characteristics were investigated with material variation of PMD-1 layers, which were split by LP-TEOS, SR-oxide, PE-oxynitride, PE-nitride and PE-TEOS films. It was observed that the PE-oxynitride and PEnitride using plasma was greatly deteriorated in hot carrier effect in comparison with silicon oxide. Consequently, it is clearly shown that silicon oxide turned out to be a better PMD-1 material than both PE-oxynitride and PE-nitride. From the results, it is suggested that LP-TEOS film is the best PMD-1 material among the silicon oxide samples.

A Planarization Model in Chemical Mechanical Polishing of Silicon Oxide using High Selective CeO2 Slurry

2001 ◽  
Vol 671 ◽  
Author(s):  
Jong Won Lee ◽  
Bo Un Yoon ◽  
Sangrok Hah ◽  
Joo Tae Moon
Keyword(s):  
High Pressure ◽  
Chemical Mechanical Polishing ◽  
Silicon Oxide ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
High Area ◽  
Trench Area

ABSTRACTThis paper attempts to establish planarization model in chemical mechanical polishing of silicon oxide using high selective ceria slurry. Though removal rate of the high area is increased due to a high pressure focused on the area with abrasive and pad, the removal rate of the same area is not increased but decreased even in the very beginning of polishing with ceria slurry. It also observed that only the elevated area is polished and dishing is not occurred during the polishing in high selective ceria CMP. In this work, it is proposed that ceria abrasives are filled in the low trench area and then support the pad as well as high area during the CMP, which results in planarization without dishing.

scholarly journals Kinematic Prediction and Experimental Demonstration of Conditioning Process for Controlling the Profile Shape of a Chemical Mechanical Polishing Pad

2021 ◽  
Vol 11 (10) ◽  
pp. 4358
Author(s):  
Hanchul Cho ◽  
Taekyung Lee ◽  
Doyeon Kim ◽  
Hyoungjae Kim
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Shape Error ◽  
Profile Shape ◽  
Conditioning Process ◽  
Polishing Pad ◽  
Simulation Based ◽  
Diamond Conditioner ◽  
Pad Conditioning ◽  
Good Agreement

The uniformity of the wafer in a chemical mechanical polishing (CMP) process is vital to the ultra-fine and high integration of semiconductor structures. In particular, the uniformity of the polishing pad corresponding to the tool directly affects the polishing uniformity and wafer shape. In this study, the profile shape of a CMP pad was predicted through a kinematic simulation based on the trajectory density of the diamond abrasives of the diamond conditioner disc. The kinematic prediction was found to be in good agreement with the experimentally measured pad profile shape. Based on this, the shape error of the pad could be maintained within 10 μm even after performing the pad conditioning process for more than 2 h, through the overhang of the conditioner.

scholarly journals Non-spherical abrasives with ordered mesoporous structures for chemical mechanical polishing

2021 ◽  
Author(s):  
Peili Gao ◽  
Tingting Liu ◽  
Zhenyu Zhang ◽  
Fanning Meng ◽  
Run-Ping Ye ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Ordered Mesoporous ◽  
Mesoporous Structures
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