Chemical Mechanical Polishing for Planarization in Manufacturing Environment

1994 ◽  
Vol 337 ◽  
Author(s):  
Mukesh Desai ◽  
Rahul Jairath ◽  
Matt Stell ◽  
Robert Toiles
Keyword(s):  
Chemical Mechanical Polishing ◽  
Process Integration ◽  
Removal Rate ◽  
Oxide Films ◽  
Silicon Wafers ◽  
Mechanical Polishing ◽  
Manufacturing Environment ◽  
The Past ◽  
Technology Generation ◽  
Cost Of Ownership

ABSTRACTGlobal Planarization requirements of the deep sub-micron technology generation requires use of CMP as preferred planarization technique. In the past, CMP has been used extensively in the polishing of silicon wafers. However , there has been some reluctance to utilize this technology in the planarization of oxide films during IC manufacture. This has been driven primarily by issues regarding manufacturability , and therefore cost of ownership of CMP processes. Here the key process integration issues in CMP planarization of oxide films are outlined.An effect of consumable set is shown to be critical in achieving repeatable CMP performance via removal rate & non-uniformity. Various defects induced as a result of CMP are explained. Cost of ownership model is used to demonstrate the importance of minimizing such defects.

Study on Chemical Mechanical Polishing Removal Mechanism of Monocrystalline Silicon

2014 ◽  
Vol 538 ◽  
pp. 40-43
Author(s):  
Hong Wei Du ◽  
Yan Ni Chen
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
Mechanical Polishing ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Polishing Pressure

In this paper, material removal mechanism of monocrystalline silicon by chemical etching with different solutions were studied to find effective oxidant and stabilizer. Material removal mechanism by mechanical loads was analyzed based on the measured acoustic signals in the scratching processes and the observation on the scratched surfaces of silicon wafers. The chemical mechanical polishing (CMP) processes of monocrystalline silicon wafers were analyzed in detail according to the observation and measurement of the polished surfaces with XRD. The results show that H2O2 is effective oxidant and KOH stabilizer. In a certain range, the higher concentration of oxidant, the higher material removal rate; the higher the polishing liquid PH value, the higher material removal rate. The polishing pressure is an important factor to obtain ultra-smooth surface without damage. Experimental results obtained silicon polishing pressure shall not exceed 42.5kPa.

Chemical mechanical polishing of thermal oxide films using silica particles coated with ceria

2002 ◽  
Vol 17 (10) ◽  
pp. 2744-2749 ◽  
Author(s):  
Seung-Ho Lee ◽  
Zhenyu Lu ◽  
S. V. Babu ◽  
Egon Matijević
Keyword(s):  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Oxide Films ◽  
Silica Particles ◽  
Silicon Wafers ◽  
Mechanical Polishing ◽  
Thermal Oxide ◽  
Pure Ceria ◽  
Polish Rate

Thermal oxide covered silicon wafers were polished with slurries containing either nano-sized ceria (CeO2) or newly prepared uniform colloidal silica particles coated with ceria. The polish rate of the latter was significantly higher than that of pure ceria. The experiments were carried out using different concentrations of the abrasives at pH 4 and 10. Little effect on the polishing rates was noted when the conditions of the slurries were varied, which was explained by the compensation of two opposite polishing mechanisms.

Evaluation of Monodispersed Silica Particles and Ceria Coated Silica Particles for Chemical Mechanical Polishing

2002 ◽  
Vol 732 ◽  
Author(s):  
Zhenyu Lu ◽  
Seung-Ho Lee ◽  
Egon Matijević ◽  
S. V. Babu
Keyword(s):  
Chemical Mechanical Polishing ◽  
Removal Rate ◽  
Oxide Films ◽  
Total Surface Area ◽  
Silica Particles ◽  
Solid Content ◽  
Mechanical Polishing ◽  
Abrasive Particles ◽  
Cu Films ◽  
Spherical Silica

AbstractThe properties of abrasive particles play a key role in chemical mechanical polishing (CMP). This study used well-defined dispersions of uniform particles, including spherical silica of varying diameters to polish Cu films and silica cores coated with nanosized ceria particles to polish oxide films. It was shown that the total surface area of the silica abrasives in the slurry controlled Cu material removal rate. However, pH, solid content, and particle size of ceria coated silica abrasives did not have a strong correlation to the removal rate of oxide films.

Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)

2008 ◽  
Vol 600-603 ◽  
pp. 831-834 ◽  
Author(s):  
Joon Ho An ◽  
Gi Sub Lee ◽  
Won Jae Lee ◽  
Byoung Chul Shin ◽  
Jung Doo Seo ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Diamond Particles ◽  
Average Grain Size ◽  
Silica Slurry ◽  
Sic Wafer

2inch 6H-SiC (0001) wafers were sliced from the ingot grown by a conventional physical vapor transport (PVT) method using an abrasive multi-wire saw. While sliced SiC wafers lapped by a slurry with 1~9㎛ diamond particles had a mean height (Ra) value of 40nm, wafers after the final mechanical polishing using the slurry of 0.1㎛ diamond particles exhibited Ra of 4Å. In this study, we focused on investigation into the effect of the slurry type of chemical mechanical polishing (CMP) on the material removal rate of SiC materials and the change in surface roughness by adding abrasives and oxidizer to conventional KOH-based colloidal silica slurry. The nano-sized diamond slurry (average grain size of 25nm) added in KOH-based colloidal silica slurry resulted in a material removal rate (MRR) of 0.07mg/hr and the Ra of 1.811Å. The addition of oxidizer (NaOCl) in the nano-size diamond and KOH based colloidal silica slurry was proven to improve the CMP characteristics for SiC wafer, having a MRR of 0.3mg/hr and Ra of 1.087Å.

Slurry Residue Removal in Post Chemical Mechanical Polishing

1999 ◽  
Author(s):  
Ahmed A. Busnaina ◽  
Naim Moumen
Keyword(s):  
Chemical Mechanical Polishing ◽  
Silicon Wafers ◽  
Mechanical Polishing ◽  
Operating Conditions ◽  
Cleaning Process ◽  
Megasonic Cleaning ◽  
Residue Removal ◽  
Particulate Contamination

Abstract The megasonic cleaning process proved to be an essential process in cleaning silicon wafers after processes such as pre-oxidation, pre-CVD, pre-EPI, post-ASH and lately post-CMP. Current post-CMP cleans are contact cleaning techniques. These contact techniques have a low throughput and may cause wafer scratching. In addition, in contact cleaning, brush shedding which occurs under many operating conditions causes additional particulate contamination. There is a need for an effective post-CMP cleaning process. Megasonic cleaning provides the best alternative or compliment to brush clean.

Modeling of Polishing Regimes in Chemical Mechanical Polishing

2005 ◽  
Vol 867 ◽  
Author(s):  
Suresh B. Yeruva ◽  
Chang-Won Park ◽  
Brij M. Moudgil
Keyword(s):  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Operating Conditions ◽  
Comprehensive Model ◽  
Mechanical Effects ◽  
Microelectronic Devices ◽  
Asperity Distribution ◽  
Modification Of The Surface

AbstractChemical mechanical polishing (CMP) is widely used for local and global planarization of microelectronic devices. It has been demonstrated experimentally in the literature that the polishing performance is a result of the synergistic effect of both the chemicals and the particles involved in CMP. However, the fundamental mechanisms of material removal and the interactions of the chemical and mechanical effects are not well understood. A comprehensive model for CMP was developed taking into account both the chemical and mechanical effects for monodisperse slurries. The chemical aspect is attributed to the chemical modification of the surface layer due to slurry chemistry, whereas the mechanical aspect is introduced by indentation of particles into the modified layer and the substrate depending on the operating conditions. In this study, the model is extended to include the particle size and pad asperity distribution effects. The refined model not only predicts the overall removal rate but also the surface roughness of the polished wafer, which is an important factor in CMP. The predictions of the model show reasonable agreement with the experimental observations.

A Model for Optimizing Material Removal Rate in Low-Pressure CMP: Effects of Pad Porosity and Abrasive Concentration

2008 ◽  
Author(s):  
Dinc¸er Bozkaya ◽  
Sinan Mu¨ftu¨
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Applied Pressure ◽  
Low Pressure ◽  
Mechanical Polishing ◽  
Low K

The necessity to planarize ultra low-k (ULK) dielectrics [1], and the desire to reduce polishing defects leads to use of lower polishing pressures in chemical mechanical polishing (CMP). However, lowering the applied pressure also decreases the material removal rate (MRR), which causes the polishing time for each wafer to increase. The goal of this work is to investigate effects of pad porosity and abrasive concentration on the MRR.

Investigation on Smoothing Silicon Carbide Wafer With a Combined Method of Mechanical Lapping and Photocatalysis Assisted Chemical Mechanical Polishing

2018 ◽  
Author(s):  
Zewei Yuan ◽  
Kai Cheng ◽  
Yan He ◽  
Meng Zhang
Keyword(s):  
Silicon Carbide ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Combined Method ◽  
Polishing Process ◽  
High Quality ◽  
Quality Surface ◽  
High Quality Surface

The high quality surface can exhibit the irreplaceable application of single crystal silicon carbide in the fields of optoelectronic devices, integrated circuits and semiconductor. However, high hardness and remarkable chemical inertness lead to great difficulty to the smoothing process of silicon carbide. Therefore, the research presented in this paper attempts to smooth silicon carbide wafer with photocatalysis assisted chemical mechanical polishing (PCMP) by using of the powerful oxidability of UV photo-excited hydroxyl radical on surface of nano-TiO2 particles. Mechanical lapping was using for rough polishing, and a material removal model was proposed for mechanical lapping to optimize the polishing process. Several photocatalysis assisted chemical mechanical polishing slurries were compared to achieve fine surface. The theoretical analysis and experimental results indicate that the material removal rate of lapping process decreases in index form with the decreasing of abrasive size, which corresponds with the model developed. After processed with mechanical lapping for 1.5 hours and subsequent photocatalysis assisted chemical mechanical polishing for 2 hours, the silicon carbide wafer obtains a high quality surface with the surface roughness at Ra 0.528 nm The material removal rate is 0.96 μm/h in fine polishing process, which is significantly influenced by factors such as ultraviolet irradiation, electron capture agent (H2O2) and acidic environment. This combined method can effectively reduce the surface roughness and improve the polishing efficiency on silicon carbide and other hard-inert materials.

scholarly journals Study on the Influence of Sapphire Crystal Orientation on Its Chemical Mechanical Polishing

2020 ◽  
Vol 10 (22) ◽  
pp. 8065
Author(s):  
Linlin Cao ◽  
Xiang Zhang ◽  
Julong Yuan ◽  
Luguang Guo ◽  
Teng Hong ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Material Properties ◽  
Chemical Mechanical Polishing ◽  
Crystal Orientation ◽  
Material Removal ◽  
Removal Rate ◽  
Substrate Material ◽  
Mechanical Polishing ◽  
Sapphire Crystal ◽  
Research Objects

Sapphire has been the most widely used substrate material in LEDs, and the demand for non-C-planes crystal is increasing. In this paper, four crystal planes of the A-, C-, M- and R-plane were selected as the research objects. Nanoindentation technology and chemical mechanical polishing technology were used to study the effect of anisotropy on material properties and processing results. The consequence showed that the C-plane was the easiest crystal plane to process with the material removal rate of 5.93 nm/min, while the R-plane was the most difficult with the material removal rate of 2.47 nm/min. Moreover, the research results have great guiding significance for the processing of sapphire with different crystal orientations.

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