Direct comparison of two-dimensional dopant profiles by scanning capacitance microscopy with TSUPREM4 process simulation

J. S. McMurray

doi:10.1116/1.589808

Direct comparison of two-dimensional dopant profiles by scanning capacitance microscopy with TSUPREM4 process simulation

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589808 ◽

1998 ◽

Vol 16 (1) ◽

pp. 344 ◽

Cited By ~ 30

Author(s):

J. S. McMurray

Keyword(s):

Process Simulation ◽

Two Dimensional ◽

Scanning Capacitance Microscopy ◽

Dopant Profiles

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Scanning capacitance microscopy measurement of two-dimensional dopant profiles across junctions

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589807 ◽

1998 ◽

Vol 16 (1) ◽

pp. 339 ◽

Cited By ~ 34

Author(s):

J. J. Kopanski

Keyword(s):

Two Dimensional ◽

Scanning Capacitance Microscopy ◽

Microscopy Measurement ◽

Dopant Profiles

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Quantitative two‐dimensional dopant profiling of abrupt dopant profiles by cross‐sectional scanning capacitance microscopy

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580260 ◽

1996 ◽

Vol 14 (3) ◽

pp. 1168-1171 ◽

Cited By ~ 34

Author(s):

Y. Huang ◽

C. C. Williams ◽

M. A. Wendman

Keyword(s):

Two Dimensional ◽

Cross Sectional ◽

Scanning Capacitance Microscopy ◽

Dopant Profiling ◽

Dopant Profiles

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Two dimensional dopant diffusion study by scanning capacitance microscopy and TSUPREM IV process simulation

The 1998 international conference on characterization and metrology for ULSI technology ◽

10.1063/1.56857 ◽

1998 ◽

Author(s):

J. Kim ◽

J. S. McMurray ◽

C. C. Williams ◽

J. Slinkman

Keyword(s):

Process Simulation ◽

Two Dimensional ◽

Dopant Diffusion ◽

Diffusion Study ◽

Scanning Capacitance Microscopy

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Precise comparison of two-dimensional dopant profiles measured by electron holography and scanning capacitance microscopy

2011 IEEE Nanotechnology Materials and Devices Conference ◽

10.1109/nmdc.2011.6155352 ◽

2011 ◽

Author(s):

Jun-Mo Yang ◽

U. Shaislamov ◽

Moon Seop Hyun ◽

Jung Ho Yoo ◽

Jeoung Woo Kim ◽

...

Keyword(s):

Electron Holography ◽

Two Dimensional ◽

Scanning Capacitance Microscopy ◽

Dopant Profiles

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Two-dimensional profiling of carriers in a buried heterostructure multi-quantum-well laser: Calibrated scanning spreading resistance microscopy and scanning capacitance microscopy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1511211 ◽

2002 ◽

Vol 20 (5) ◽

pp. 2126 ◽

Cited By ~ 27

Author(s):

D. Ban ◽

E. H. Sargent ◽

St. J. Dixon-Warren ◽

T. Grevatt ◽

G. Knight ◽

...

Keyword(s):

Quantum Well ◽

Two Dimensional ◽

Spreading Resistance ◽

Scanning Capacitance Microscopy ◽

Quantum Well Laser ◽

Buried Heterostructure ◽

Multi Quantum Well

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Quantitative scanning capacitance microscopy analysis of two-dimensional dopant concentrations at nanoscale dimensions

Journal of Electronic Materials ◽

10.1007/bf02666260 ◽

1996 ◽

Vol 25 (2) ◽

pp. 301-304 ◽

Cited By ~ 30

Author(s):

A. Erickson ◽

L. Sadwick ◽

G. Neubauer ◽

J. Kopanski ◽

D. Adderton ◽

...

Keyword(s):

Two Dimensional ◽

Scanning Capacitance Microscopy ◽

Microscopy Analysis

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TWO-DIMENSIONAL DOPANT PROFILING BY SCANNING CAPACITANCE MICROSCOPY

Annual Review of Materials Science ◽

10.1146/annurev.matsci.29.1.471 ◽

1999 ◽

Vol 29 (1) ◽

pp. 471-504 ◽

Cited By ~ 180

Author(s):

C. C. Williams

Keyword(s):

Two Dimensional ◽

Scanning Capacitance Microscopy ◽

Dopant Profiling

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Efficient two-dimensional multilayer process simulation of advanced bipolar devices

Solid-State Electronics ◽

10.1016/0038-1101(89)90165-2 ◽

1989 ◽

Vol 32 (11) ◽

pp. 1013-1023 ◽

Cited By ~ 13

Author(s):

Bruno Baccus ◽

Emmanuel Dubois ◽

Dominique Collard ◽

Denis Morel

Keyword(s):

Process Simulation ◽

Two Dimensional ◽

Bipolar Devices

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Two dimensional boron diffusion determination by scanning capacitance microscopy

Materials Science and Engineering B ◽

10.1016/s0921-5107(01)00999-0 ◽

2002 ◽

Vol 91-92 ◽

pp. 220-223 ◽

Cited By ~ 1

Author(s):

F. Giannazzo ◽

V. Raineri ◽

F. Priolo

Keyword(s):

Two Dimensional ◽

Boron Diffusion ◽

Scanning Capacitance Microscopy

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Two-dimensional scanning capacitance microscopy measurements of cross-sectioned very large scale integration test structures

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588487 ◽

1996 ◽

Vol 14 (1) ◽

pp. 426 ◽

Cited By ~ 62

Author(s):

Gabi Neubauer

Keyword(s):

Large Scale ◽

Very Large Scale Integration ◽

Two Dimensional ◽

Scanning Capacitance Microscopy ◽

Integration Test ◽

Large Scale Integration ◽

Scale Integration

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