Two dimensional dopant diffusion study by scanning capacitance microscopy and TSUPREM IV process simulation

1998 ◽  
Author(s):  
J. Kim ◽  
J. S. McMurray ◽  
C. C. Williams ◽  
J. Slinkman
Keyword(s):  
Process Simulation ◽  
Two Dimensional ◽  
Dopant Diffusion ◽  
Diffusion Study ◽  
Scanning Capacitance Microscopy

Two-dimensional Dopant Diffusion Study using Scanning Capacitance Microscopy

1999 ◽  
Vol 568 ◽  
Author(s):  
Guanyuan M. Yu ◽  
Peter B. Griffin ◽  
James D. Plummer
Keyword(s):  
Silicon Oxide ◽  
Two Dimensional ◽  
Dopant Diffusion ◽  
Diffusion Study ◽  
Oxide Interface ◽  
Deconvolution Technique ◽  
Drain Region ◽  
And Diffusion ◽  
Preparation Techniques ◽  
Channel Region

ABSTRACTThe results of a two-dimensional dopant diffusion study using two new sample preparation techniques and a database-driven deconvolution technique are presented. These techniques are applied to real devices to justify complex implantation and diffusion models. It will be shown that the dose loss behavior is not uniform along the silicon/oxide interface from the source/drain region to the channel region. A new non-uniform dose loss model is proposed and used to explain the experimental results.

Quantitative scanning capacitance microscopy analysis of two-dimensional dopant concentrations at nanoscale dimensions

1996 ◽  
Vol 25 (2) ◽  
pp. 301-304 ◽  
Author(s):  
A. Erickson ◽  
L. Sadwick ◽  
G. Neubauer ◽  
J. Kopanski ◽  
D. Adderton ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Scanning Capacitance Microscopy ◽  
Microscopy Analysis

Efficient two-dimensional multilayer process simulation of advanced bipolar devices

1989 ◽  
Vol 32 (11) ◽  
pp. 1013-1023 ◽  
Author(s):  
Bruno Baccus ◽  
Emmanuel Dubois ◽  
Dominique Collard ◽  
Denis Morel
Keyword(s):  
Process Simulation ◽  
Two Dimensional ◽  
Bipolar Devices
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