Quantitative scanning capacitance microscopy analysis of two-dimensional dopant concentrations at nanoscale dimensions

1996 ◽  
Vol 25 (2) ◽  
pp. 301-304 ◽  
Author(s):  
A. Erickson ◽  
L. Sadwick ◽  
G. Neubauer ◽  
J. Kopanski ◽  
D. Adderton ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Scanning Capacitance Microscopy ◽  
Microscopy Analysis

A reliable course of Scanning Capacitance Microscopy analysis applied for 2D-Dopant Profilings of Power MOSFET Devices

2001 ◽  
Vol 41 (9-10) ◽  
pp. 1535-1537 ◽  
Author(s):  
M. Leicht ◽  
G. Fritzer ◽  
B. Basnar ◽  
S. Golka ◽  
J. Smoliner
Keyword(s):  
Power Mosfet ◽  
Scanning Capacitance Microscopy ◽  
Microscopy Analysis

Guidelines for Two-Dimensional Dopant Profiling Using Scanning Capacitance Microscopy

2000 ◽  
Author(s):  
Axel Born ◽  
R. Wiesendanger
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Edge Effects ◽  
Two Dimensional ◽  
Stray Capacitance ◽  
Scanning Capacitance Microscopy ◽  
Dopant Profiling ◽  
3D Geometry ◽  
Cv Measurements ◽  
Preparation Techniques

Abstract This paper provides guidance and insights on the use of scanning capacitance microscopy (SCM) in semiconductor failure analysis. It explains why SCM systems are constrained by rigid performance tradeoffs and how CV measurements are affected by large stray capacitance and as well as edge effects associated with the 3D geometry of the sample and probe. It also explains how samples should be prepared and how proper sample preparation techniques combined with optimally selected voltages make it possible to accurately determine doping concentrations, even in p-n junctions.

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