Two-dimensional profiling of carriers in a buried heterostructure multi-quantum-well laser: Calibrated scanning spreading resistance microscopy and scanning capacitance microscopy

2002 ◽  
Vol 20 (5) ◽  
pp. 2126 ◽  
Author(s):  
D. Ban ◽  
E. H. Sargent ◽  
St. J. Dixon-Warren ◽  
T. Grevatt ◽  
G. Knight ◽  
...  
Keyword(s):  
Quantum Well ◽  
Two Dimensional ◽  
Spreading Resistance ◽  
Scanning Capacitance Microscopy ◽  
Quantum Well Laser ◽  
Buried Heterostructure ◽  
Multi Quantum Well

2μm InGaAsSb/AlGaAsSb Multi-quantum Well Laser Diode with Electron Stopper Layer

2014 ◽  
Vol 35 (10) ◽  
pp. 1205-1209
Author(s):  
安宁 AN Ning ◽  
刘国军 LIU Guo-jun ◽  
李占国 LI Zhan-guo ◽  
常量 CHANG Liang ◽  
魏志鹏 WEI Zhi-peng ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Quantum Well Laser ◽  
Multi Quantum Well

Scanning Capacitance Microscopy of Dopants in III-V Semiconductors

1998 ◽  
Vol 4 (S2) ◽  
pp. 640-641
Author(s):  
David V. Lang
Keyword(s):  
Quantum Well ◽  
Laser Beam ◽  
Surface Topography ◽  
Cross Sections ◽  
Beam Deflection ◽  
Doping Analysis ◽  
Scanning Capacitance Microscopy ◽  
Sample Spacing ◽  
Doping Profiles ◽  
Multi Quantum Well

Scanning Capacitance Microscopy (SCM) was first developed in 1985 as a method for sensing tip-to-sample spacing for surface topography profiling in connection with the RCA VideoDisc. Williams and coworkers were the first to use an SCM for obtaining dC/dV doping profiles in semiconductors, albeit with a rather modest resolution of 200 nm. More recently, it has been developed as a 50-nmresolution tool for microscopic doping analysis of semiconductors by measuring the tip-to-sample rf capacitance in an AFM controlled by other means, e.g. by laser beam deflection of a cantilever tip. In this paper we report on the application of SCM to study the 2D doping profiles of InP-based devices, such as multi-quantum well lasers.It is particularly convenient to prepare cross sections of III-V devices, since the material readily cleaves on [110] planes, as compared to silicon where cross sections must be obtained by painstaking polishing.

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