Quantitative two‐dimensional dopant profiling of abrupt dopant profiles by cross‐sectional scanning capacitance microscopy

1996 ◽  
Vol 14 (3) ◽  
pp. 1168-1171 ◽  
Author(s):  
Y. Huang ◽  
C. C. Williams ◽  
M. A. Wendman
Keyword(s):  
Two Dimensional ◽  
Cross Sectional ◽  
Scanning Capacitance Microscopy ◽  
Dopant Profiling ◽  
Dopant Profiles

Guidelines for Two-Dimensional Dopant Profiling Using Scanning Capacitance Microscopy

2000 ◽  
Author(s):  
Axel Born ◽  
R. Wiesendanger
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Edge Effects ◽  
Two Dimensional ◽  
Stray Capacitance ◽  
Scanning Capacitance Microscopy ◽  
Dopant Profiling ◽  
3D Geometry ◽  
Cv Measurements ◽  
Preparation Techniques

Abstract This paper provides guidance and insights on the use of scanning capacitance microscopy (SCM) in semiconductor failure analysis. It explains why SCM systems are constrained by rigid performance tradeoffs and how CV measurements are affected by large stray capacitance and as well as edge effects associated with the 3D geometry of the sample and probe. It also explains how samples should be prepared and how proper sample preparation techniques combined with optimally selected voltages make it possible to accurately determine doping concentrations, even in p-n junctions.

scholarly journals Two-dimensional dopant Profiling on Operating MOSFET by Scanning Capacitance Microscopy

Hyomen Kagaku ◽  
2007 ◽  
Vol 28 (2) ◽  
pp. 84-90
Author(s):  
Koji USUDA ◽  
Kenjiro KIMURA ◽  
Kei KOBAYASHI ◽  
Hirofumi YAMADA
Keyword(s):  
Two Dimensional ◽  
Scanning Capacitance Microscopy ◽  
Dopant Profiling

A Novel Sample Preparation Approach for Dopant Profiling of 14 nm FinFET Devices with Scanning Capacitance Microscopy

2020 ◽  
Author(s):  
Nirmal Adhikari ◽  
Phil Kaszuba ◽  
Gaitan Mathieu ◽  
Erik McCullen ◽  
Thom Hartswick ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Low Voltage ◽  
Negative Impact ◽  
Electrical Contact ◽  
Process Models ◽  
Ion Milling ◽  
Cross Sectional ◽  
Scanning Capacitance Microscopy ◽  
Dopant Profiling ◽  
Profile Control

Abstract Three-dimensional device (FinFET) doping requirements are challenging due to fin sidewall doping, crystallinity control, junction profile control, and leakage control in the fin. In addition, physical failure analyses of FinFETs can frequently reach a “dead end” with a No Defect Found (NDF) result when channel doping issues are the suspected culprit (e.g., high Vt, low Vt, low gain, sub-threshold leakage, etc.). In new technology development, the lack of empirical dopant profile data to support device and process models and engineering has had, and continues to have, a profound negative impact on these emerging technologies. Therefore, there exists a critical need for dopant profiling in the industry to support the latest technologies that use FinFETs as their fundamental building block [1]. Here, we discuss a novel sample preparation method for cross-sectional dopant profiling of FinFET devices. Our results show that the combination of low voltage (<500eV), shallow angle (~10 degree) ion milling, dry etching, and mechanical polishing provides an adequately smooth surface (Rq<5Å) and minimizes surface amorphization, thereby allowing a strong Scanning Capacitance Microscopy (SCM) signal representative of local active dopant (carrier) concentration. The strength of the dopant signal was found to be dependent upon mill rate, electrical contact quality, amorphous layer presence and SCM probe quality. This paper focuses on a procedure to overcome critical issues during sample preparation for dopant profiling in FinFETs.

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