Effects of native oxide removal from silicon substrate and annealing on SiO2 films deposited at 120 °C by plasma enhanced chemical vapor deposition using disilane and nitrous oxide

1996 ◽  
Vol 14 (2) ◽  
pp. 727 ◽  
Author(s):  
Juho Song
Keyword(s):  
Nitrous Oxide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Substrate ◽  
Chemical Vapor ◽  
Native Oxide ◽  
Sio2 Films ◽  
Oxide Removal

Selective Deposition of Silicon and Silicon-Germanium Alloys by Rapid Thermal Chemical Vapor Deposition

1996 ◽  
Vol 429 ◽  
Author(s):  
John M. Grant ◽  
Ming Ang ◽  
Lynn R. Allen
Keyword(s):  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Chemical Vapor ◽  
Native Oxide ◽  
Initiation Time ◽  
Selective Deposition ◽  
Thermal Chemical Vapor Deposition ◽  
Oxide Removal

AbstractSelective deposition of SiGe alloys by rapid thermal deposition has been studied using a commercially available Rapid Thermal Chemical Vapor Deposition (RTCVD) cluster tool. The precursors used in this work were dichlorosilane and germane diluted in either hydrogen or argon. An initial characterization was performed to find the appropriate temperature and GeH4 flow ranges to deposit epitaxial layers with low surface roughness. For layers with higher germanium concentration lower deposition temperatures are required to minimize surface roughness. The effects of the dilutant gas on the deposition were examined. An H2 dilutant affects the deposition by consuming chlorine released by the SiCl2H2 and forming HCI. When Ar is used as the dilutant, more chlorine is available for other reactions that can result in etching of the silicon surface. Finally, the effects of pre-deposition treatment were determined. When compared to a wet HF dip, a gas/vapor phase HF/methanol native oxide removal treatment appears to increase the initiation time for the epitaxial deposition reaction. This is most likely due to increased fluorine termination of the surface. When a wet HF or HF/methanol native oxide removal is followed by a UV-Cl2 process, the deposition reaction initiation time is reduced. The UV-Cl2 process was also found to etch silicon through the native oxide.

Chemical vapor deposition of SiO2 films by TEOS/O2 supermagnetron plasma

Vacuum ◽  
2004 ◽  
Vol 76 (1) ◽  
pp. 19-22 ◽  
Author(s):  
Haruhisa Kinoshita ◽  
Toichi Murakami ◽  
Fumihiko Fukushima
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Sio2 Films

Low Temperature Nitridatio of SiO2 Films using a Catalytic-CVD System

2000 ◽  
Vol 611 ◽  
Author(s):  
Akira Izumi ◽  
Hidekazu Sato ◽  
Hideki Matsumura
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Catalytic Decomposition ◽  
Catalytic Chemical Vapor Deposition ◽  
Sio2 Films ◽  
X Ray

ABSTRACTThis paper reports a procedure for low-temperature nitridation of silicon dioxide (SiO2) surfaces using species produced by catalytic decomposition of NH3 on heated tungsten in catalytic chemical vapor deposition (Cat-CVD) system. The surface of SiO2/Si(100) was nitrided at temperatures as low as 200°C. X-ray photoelectron spectroscopy measurements revealed that incorporated N atoms are bound to Si atoms and O atoms and located top-surface of SiO2.

Growth of amorphous SiO2 nano-wires on pre-oxidized silicon substrate via chemical vapor deposition

2008 ◽  
Vol 354 (15-16) ◽  
pp. 1731-1735 ◽  
Author(s):  
Zhimei Yang ◽  
Zhou Yu ◽  
Hao Chen ◽  
Zhifeng Jiao ◽  
Yong Jin ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Substrate ◽  
Chemical Vapor ◽  
Amorphous Sio2 ◽  
Nano Wires

Fast Diffusion of Water Molecules into Chemically Modified SiO2 Films Formed by Chemical Vapor Deposition

2012 ◽  
Vol 41 (1) ◽  
pp. 60-61
Author(s):  
Atsushi Ohtake ◽  
Kinya Kobayashi ◽  
Syuhei Kurokawa ◽  
Osamu Ohnishi ◽  
Toshiro Doi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Water Molecules ◽  
Fast Diffusion ◽  
Sio2 Films ◽  
Chemically Modified

A soft Plasma Enhanced-Chemical Vapor Deposition process for the tailored synthesis of SiO2 films

2008 ◽  
Vol 516 (21) ◽  
pp. 7393-7399 ◽  
Author(s):  
Davide Barreca ◽  
Alberto Gasparotto ◽  
Chiara Maccato ◽  
Eugenio Tondello ◽  
Gilberto Rossetto
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Chemical Vapor Deposition Process ◽  
Sio2 Films ◽  
Vapor Deposition Process
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