Optimal surface cleaning of GaAs (001) with atomic hydrogen

E. J. Petit

doi:10.1116/1.587388

Low Temperature Surface Cleaning of InP by Irradiation of Atomic Hydrogen

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.l287 ◽

1993 ◽

Vol 32 (Part 2, No. 2B) ◽

pp. L287-L289 ◽

Cited By ~ 37

Author(s):

Yong Jin Chun ◽

Takeyoshi Sugaya ◽

Yoshitaka Okada ◽

Mitsuo Kawabe

Keyword(s):

Low Temperature ◽

Atomic Hydrogen ◽

Surface Cleaning ◽

Temperature Surface

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Wafer bonding of different III–V compound semiconductors by atomic hydrogen surface cleaning

Journal of Applied Physics ◽

10.1063/1.1403684 ◽

2001 ◽

Vol 90 (8) ◽

pp. 3856-3862 ◽

Cited By ~ 35

Author(s):

T. Akatsu ◽

A. Plössl ◽

R. Scholz ◽

H. Stenzel ◽

U. Gösele

Keyword(s):

Wafer Bonding ◽

Atomic Hydrogen ◽

Compound Semiconductors ◽

Surface Cleaning

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Surface Engineering for Adhesively Bonded Metal-Composite Joints

Journal of Ship Production ◽

10.5957/jsp.2007.23.2.72 ◽

2007 ◽

Vol 23 (02) ◽

pp. 72-81

Author(s):

Mark Smith ◽

Parsaoran Hutapea

Keyword(s):

Literature Review ◽

Adhesive Bonding ◽

Surface Engineering ◽

Surface Characteristics ◽

Surface Cleaning ◽

Future Research ◽

Composite Joints ◽

Metal Composite ◽

Composite Joint ◽

Optimal Surface

Recently, many nations along with private shipbuilders have begun developing large maritime vessels using composite materials structurally. Concurrently, the US Navy has a need for research on bonded metal-composite joints. For these reasons, a literature review was conducted to establish a fundamental knowledge base of adhesive bonding and failure theories along with surface cleaning and engineering processes that would be valuable for metal-composite joint designs. It is believed that by understanding bonding and failure fundamentals, optimal surface characteristics can be targeted. Furthermore, by knowing the available cleaning and surface engineering processes, in conjunction with understanding their resulting surface topographies and compositions, creative and novel joints can be designed. This report provides the results of the literature review performed, which serves as a platform for future research aimed at optimizing bonded joints for use in naval applications.

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Production of ohmic contacts to Al x Ga 1-x As of the n- and p-type conductivity with surface cleaning in atomic hydrogen

10.1117/12.323987 ◽

1998 ◽

Author(s):

A. S. Vishnyakov ◽

Valerii A. Kagadei ◽

N. I. Kozhinova ◽

L. M. Romas ◽

Dmitry I. Proskurovsky

Keyword(s):

Atomic Hydrogen ◽

Ohmic Contacts ◽

Surface Cleaning ◽

Type Conductivity ◽

P Type

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Si(100) Surface Preparation by In-Situ or in-Vacuo Exposure to Remotely Plasma-Generated Atomic Hydrogen: Applications to Deposited SiO2 and Epitaxial Growth of Si

MRS Proceedings ◽

10.1557/proc-202-395 ◽

1990 ◽

Vol 202 ◽

Cited By ~ 6

Author(s):

T. Yasuda ◽

Y. Ma ◽

S. Habermehl ◽

S. S. Kim ◽

G. Lucovsky ◽

...

Keyword(s):

Epitaxial Growth ◽

Atomic Hydrogen ◽

Hydrogen Plasma ◽

Surface Preparation ◽

Surface Cleaning ◽

Ozone Exposure ◽

Ex Situ ◽

Carbon Surface ◽

Necessary Condition

ABSTRACTThis paper addresses the in-situ/in-vacuo preparation of Si (100) substrates by hydrogen plasma cleaning prior to low temperature deposition of SiO2, or epitaxial growth of Si or Ge. The paper emphasizes the effectiveness of this type of substrate surface preparation following ex-situ wet-cleaning procedures that include: i) conventional RCA cleans; ii) modified RCA cleans, which incorporate exposure of the Si substrate to ozone, O3; and iii) ozone exposure, with all of these terminated by the removal of sacrificial oxides by dilute HF. We conclude: i) all ex-situ surface cleaning of Si (100) substrates leaves behind sub-monolayer oxygen and carbon surface contamination; ii) that virtually all of the carbon can be removed by exposure of the Si surface to atomic hydrogen at a temperature of <300°C; and iii) that a necessary condition for: (a) the formation of Si/SiO2 interfaces with low defect densities, Dit<l−3×1010cm−2-eV−1, and (b) the growth of epitaxial films of Si; is that the processed Si surface exhibit a 2×1 reconstruction, as detected by LEED or RHEED, following the exposure to atomic hydrogen.

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A Novel Surface Cleaning for Copper Interconnection Using Atomic Hydrogen

ECS Meeting Abstracts ◽

10.1149/ma2005-02/20/793 ◽

2005 ◽

Keyword(s):

Atomic Hydrogen ◽

Surface Cleaning ◽

Copper Interconnection

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Measurement of atomic hydrogen flow density during GaAs surface cleaning

10.1117/12.802357 ◽

2008 ◽

Author(s):

V. A. Kagadei ◽

E. V. Nefyodtsev ◽

D. I. Proskurovski ◽

S. V. Romanenko

Keyword(s):

Atomic Hydrogen ◽

Surface Cleaning ◽

Gaas Surface ◽

Flow Density ◽

Hydrogen Flow

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InGaAs (110) Surface Cleaning Using Atomic Hydrogen

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.219.47 ◽

2014 ◽

Vol 219 ◽

pp. 47-51 ◽

Cited By ~ 1

Author(s):

Tyler Kent ◽

Mary Edmonds ◽

Ravi Droopad ◽

Andrew C. Kummel

Keyword(s):

Fermi Level ◽

Atomic Hydrogen ◽

Field Effect ◽

Field Effect Transistors ◽

Surface Cleaning ◽

Ex Situ ◽

Trap States ◽

Short Channel ◽

In Situ Method

A major obstacle facing III-V semiconductor based metal oxide semiconductor field effect transistors (MOSFETs) is the large density of trap states that exist at the semiconductor/oxide interface.[1] These trap states can pin the Fermi level preventing the MOSFET from acting as a switch in logic devices. Several sources of Fermi level pinning have been proposed including oxidation of the III-V substrate.[2, 3] In order to minimize the presence of III-V oxides it is crucial to employ either an ex-situ etch or to use an in-situ method such as atomic hydrogen cleaning.[4, 5] Although atomic H cleaning of III-V surfaces is well known, it has never been demonstrated on InGaAs (110) crystallographic faces. Furthermore, tri-gate field effect transistors (finFETs) have recently been employed in commercially available logic chips.[6] This unique device architecture allows for a reduction in short channel effects, minimization of the subthreshold swing, and a higher transconductance.[7] The InGaAs (110) surface would be the sidewalls of a vertically aligned (001) based finFETs.[8] Therefore, it is essential to find an in-situ method to efficiently remove any oxides or contamination from the (110) surfaces that is also compatible with the (001) surface. In this study, STM was employed to determine if atomic hydrogen can be used to remove the native oxide from air exposed InGaAs (110) samples. A post clean anneal was used to restore the surface to molecular beam epitaxy (MBE) levels of cleanliness.

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