Wafer bonding of different III–V compound semiconductors by atomic hydrogen surface cleaning

2001 ◽  
Vol 90 (8) ◽  
pp. 3856-3862 ◽  
Author(s):  
T. Akatsu ◽  
A. Plössl ◽  
R. Scholz ◽  
H. Stenzel ◽  
U. Gösele
Keyword(s):  
Wafer Bonding ◽  
Atomic Hydrogen ◽  
Compound Semiconductors ◽  
Surface Cleaning

GaAs wafer bonding by atomic hydrogen surface cleaning

1999 ◽  
Vol 86 (12) ◽  
pp. 7146-7150 ◽  
Author(s):  
Takeshi Akatsu ◽  
Andreas Plößl ◽  
Heinz Stenzel ◽  
Ulrich Gösele
Keyword(s):  
Wafer Bonding ◽  
Atomic Hydrogen ◽  
Surface Cleaning ◽  
Gaas Wafer

Low Temperature Surface Cleaning of InP by Irradiation of Atomic Hydrogen

1993 ◽  
Vol 32 (Part 2, No. 2B) ◽  
pp. L287-L289 ◽  
Author(s):  
Yong Jin Chun ◽  
Takeyoshi Sugaya ◽  
Yoshitaka Okada ◽  
Mitsuo Kawabe
Keyword(s):  
Low Temperature ◽  
Atomic Hydrogen ◽  
Surface Cleaning ◽  
Temperature Surface

Photoluminescence Detection of Shallow Impurity Neutralization in Iii-V Compound Semiconductors

1987 ◽  
Vol 104 ◽  
Author(s):  
Jörg Weber ◽  
Mandeep Singh
Keyword(s):  
Plasma Treatment ◽  
Atomic Hydrogen ◽  
Hydrogen Plasma ◽  
Compound Semiconductors ◽  
Exciton Luminescence ◽  
Before And After ◽  
Intensity Changes ◽  
Shallow Impurity ◽  
Intense Luminescence ◽  
Sulfur Donor

ABSTRACTWe studied the low-temperature photoluminescence (PL) of several III–V compound semiconductors before and after hydrogen-plasma treatment. Drastic intensity changes of the bound exciton luminescence after hydrogen plasma treatments indicate a neutralization of impurities by the atomic hydrogen. In GaP, neutralization of the sulfur donor as well as the acceptors (C, Zn, Cd) is observed. The intense luminescence of the exciton bound to isoelectronic N in GaP is fully quenched by hydrogen plasma treatment.

Production of ohmic contacts to Al x Ga 1-x As of the n- and p-type conductivity with surface cleaning in atomic hydrogen

1998 ◽  
Author(s):  
A. S. Vishnyakov ◽  
Valerii A. Kagadei ◽  
N. I. Kozhinova ◽  
L. M. Romas ◽  
Dmitry I. Proskurovsky
Keyword(s):  
Atomic Hydrogen ◽  
Ohmic Contacts ◽  
Surface Cleaning ◽  
Type Conductivity ◽  
P Type

Si(100) Surface Preparation by In-Situ or in-Vacuo Exposure to Remotely Plasma-Generated Atomic Hydrogen: Applications to Deposited SiO2 and Epitaxial Growth of Si

1990 ◽  
Vol 202 ◽  
Author(s):  
T. Yasuda ◽  
Y. Ma ◽  
S. Habermehl ◽  
S. S. Kim ◽  
G. Lucovsky ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Atomic Hydrogen ◽  
Hydrogen Plasma ◽  
Surface Preparation ◽  
Surface Cleaning ◽  
Ozone Exposure ◽  
Ex Situ ◽  
Carbon Surface ◽  
Necessary Condition

ABSTRACTThis paper addresses the in-situ/in-vacuo preparation of Si (100) substrates by hydrogen plasma cleaning prior to low temperature deposition of SiO2, or epitaxial growth of Si or Ge. The paper emphasizes the effectiveness of this type of substrate surface preparation following ex-situ wet-cleaning procedures that include: i) conventional RCA cleans; ii) modified RCA cleans, which incorporate exposure of the Si substrate to ozone, O3; and iii) ozone exposure, with all of these terminated by the removal of sacrificial oxides by dilute HF. We conclude: i) all ex-situ surface cleaning of Si (100) substrates leaves behind sub-monolayer oxygen and carbon surface contamination; ii) that virtually all of the carbon can be removed by exposure of the Si surface to atomic hydrogen at a temperature of <300°C; and iii) that a necessary condition for: (a) the formation of Si/SiO2 interfaces with low defect densities, Dit<l−3×1010cm−2-eV−1, and (b) the growth of epitaxial films of Si; is that the processed Si surface exhibit a 2×1 reconstruction, as detected by LEED or RHEED, following the exposure to atomic hydrogen.

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