GaAs wafer bonding by atomic hydrogen surface cleaning

1999 ◽  
Vol 86 (12) ◽  
pp. 7146-7150 ◽  
Author(s):  
Takeshi Akatsu ◽  
Andreas Plößl ◽  
Heinz Stenzel ◽  
Ulrich Gösele
Keyword(s):  
Wafer Bonding ◽  
Atomic Hydrogen ◽  
Surface Cleaning ◽  
Gaas Wafer

Wafer bonding of different III–V compound semiconductors by atomic hydrogen surface cleaning

2001 ◽  
Vol 90 (8) ◽  
pp. 3856-3862 ◽  
Author(s):  
T. Akatsu ◽  
A. Plössl ◽  
R. Scholz ◽  
H. Stenzel ◽  
U. Gösele
Keyword(s):  
Wafer Bonding ◽  
Atomic Hydrogen ◽  
Compound Semiconductors ◽  
Surface Cleaning

High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

2015 ◽  
Vol 107 (26) ◽  
pp. 261107 ◽  
Author(s):  
Zihao Wang ◽  
Ruizhe Yao ◽  
Stefan F. Preble ◽  
Chi-Sen Lee ◽  
Luke F. Lester ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Dot ◽  
Wafer Bonding ◽  
High Performance ◽  
Silicon Substrates ◽  
Quantum Dot Lasers ◽  
Gaas Wafer ◽  
Inas Quantum Dot

High-temperature healing of interfacial voids in GaAs wafer bonding

2002 ◽  
Vol 91 (4) ◽  
pp. 1973-1977 ◽  
Author(s):  
YewChung Sermon Wu ◽  
Po Chun Liu ◽  
R. S. Feigelson ◽  
R. K. Route
Keyword(s):  
High Temperature ◽  
Wafer Bonding ◽  
Gaas Wafer

A Bulk RF MEMS Switch by Silicon-to-GaAs Bonding

2009 ◽  
Vol 60-61 ◽  
pp. 224-227
Author(s):  
Le Lu ◽  
Jian Zhu ◽  
Shi Xin Jian ◽  
Chen Chen
Keyword(s):  
Gallium Arsenide ◽  
Transmission Line ◽  
Wafer Bonding ◽  
Gaas Substrate ◽  
Rf Mems ◽  
Beam Structure ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Gaas Wafer ◽  
Electrode Contact

. A Bulk RF MEMS switch is present in this paper. The beam structure and transmission line are separated fabricated on silicon and gallium arsenide (GaAs) wafer. The beam structure, up electrode, contact and anchor are fabricated on the silicon wafer. And transmission line and down electrode are made on the GaAs substrate. Two parts of the switch are bonded together by wafer bonding using gold layer as seed. The total area of the switch is 600 um X 600 um.

Low Temperature Surface Cleaning of InP by Irradiation of Atomic Hydrogen

1993 ◽  
Vol 32 (Part 2, No. 2B) ◽  
pp. L287-L289 ◽  
Author(s):  
Yong Jin Chun ◽  
Takeyoshi Sugaya ◽  
Yoshitaka Okada ◽  
Mitsuo Kawabe
Keyword(s):  
Low Temperature ◽  
Atomic Hydrogen ◽  
Surface Cleaning ◽  
Temperature Surface

scholarly journals Interface structures in GaAs wafer bonding: Application to compliant substrates

2000 ◽  
Vol 76 (19) ◽  
pp. 2674-2676 ◽  
Author(s):  
R. R. Vanfleet ◽  
M. Shverdin ◽  
J. Silcox ◽  
Z. H. Zhu ◽  
Y. H. Lo
Keyword(s):  
Wafer Bonding ◽  
Gaas Wafer ◽  
Compliant Substrates ◽  
Interface Structures

Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity

2013 ◽  
Vol 113 (20) ◽  
pp. 203512 ◽  
Author(s):  
S. Essig ◽  
O. Moutanabbir ◽  
A. Wekkeli ◽  
H. Nahme ◽  
E. Oliva ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Wafer Bonding ◽  
Atom Beam ◽  
Gaas Wafer ◽  
Fast Atom Beam

Low-temperature InP∕GaAs wafer bonding using sulfide-treated surface

2006 ◽  
Vol 88 (6) ◽  
pp. 061104 ◽  
Author(s):  
Hui Huang ◽  
Xiaomin Ren ◽  
Xinyan Wang ◽  
Qi Wang ◽  
Yongqing Huang
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Gaas Wafer
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